Vertical semiconductor component and method for generating an abrupt end point detection signal during the production of such a vertical semiconductor component

Patent metadata

Field	Value
Publication number	US-2024136236-A1
Application number	US-202218546168-A
Country	US
Kind code	A1
Filing date	Jan 28, 2022
Priority date	Mar 30, 2021
Publication date	Apr 25, 2024
Grant date	—

Abstract

A vertical semiconductor component for generating an abrupt end point detection signal. The vertical semiconductor component includes: a semiconductor substrate which has a front face and a rear face, the front face being opposite the rear face, and the semiconductor substrate having first chemical elements; a buffer layer which is arranged on the front face of the semiconductor substrate, the buffer layer having second chemical elements; and a semiconductor contact layer which is arranged on the buffer layer, an active region of the vertical semiconductor component being arranged on the semiconductor contact layer. An etching control layer is arranged between the buffer layer and the semiconductor contact layer, the etching control layer having at least one third chemical element which differs from the first chemical elements and the second chemical elements.

First claim

1 - 10 . (canceled)

11 . A vertical semiconductor component for generating an abrupt end point detection signal, comprising:
a semiconductor substrate which has a front face and a rear face, the front face being opposite the rear face, the semiconductor substrate having first chemical elements; a buffer layer which is arranged on the front face of the semiconductor substrate, the buffer layer having second chemical elements; a semiconductor contact layer which is arranged on the buffer layer, an active region of the vertical semiconductor component being arranged on the semiconductor contact layer; and an etching control layer arranged between the buffer layer and the semiconductor contact layer, the etching control layer having at least one third chemical element which differs from the first chemical elements and the second chemical elements.

12 . The vertical semiconductor component according to claim 11 , wherein the third chemical element includes germanium, or magnesium, or iron or indium.

13 . A vertical semiconductor component for generating an abrupt end point detection signal, comprising:
a semiconductor substrate which has a front face and a rear face, the front face being opposite the rear face, the semiconductor substrate having first chemical elements and a further chemical element with a first background concentration, a buffer layer which is arranged on the front face of the semiconductor substrate, the buffer layer having second chemical elements and the further chemical element with a second background concentration; a semiconductor contact layer which is arranged on the buffer layer, an active region of the vertical semiconductor component being arranged on the semiconductor contact layer; and an etching control layer arranged between the buffer layer and the semiconductor contact layer, the etching control layer having the further element with a third background concentration, the third background concentration being greater than the first background concentration and the second background concentration.

14 . The vertical semiconductor component according to claim 13 , wherein the further chemical element is carbon.

15 . The vertical semiconductor component according to claim 13 , wherein the third background concentration includes a range between 1E18 cm{circumflex over ( )}−3 and 1E19 cm{circumflex over ( )}−3.

16 . The vertical semiconductor component according to claim 11 , wherein the etching control layer has a layer thickness between 20 nm and 200 nm.

17 . The vertical semiconductor component according to claim 11 , wherein the first chemical elements include: i) silicon, or ii) silicon and boron, or iii) silicon and phosphorus, or iv) silicon and arsenic, or v) silicon and antimony, and the second chemical elements include aluminum and gallium and nitrogen.

18 . The vertical semiconductor component according to claim 11 , wherein the vertical semiconductor component includes gallium nitride.

19 . The vertical semiconductor component according to claim 11 , wherein the vertical semiconductor component is a Schottky diode, or a pn diode, or a vertical diffusion MOSFET, or a planar gate MOSFET, or a trench gate MOSFET, or a current aperture vertical electron transistor, or a vGroove HEMT, or a FinFET.

20 . A method for generating an abrupt end point detection signal during production of a vertical semiconductor component including a semiconductor substrate which has a front face and a rear face, the front face being opposite the rear face, the semiconductor substrate having first chemical elements, the vertical semiconductor component further including a buffer layer which is arranged on the semiconductor substrate and has second chemical elements, the vertical semiconductor component further includes a semiconductor contact layer, and an active region of the vertical semiconductor component, the method comprising the following steps:
generating an etching control layer which is arranged between the buffer layer and the semiconductor contact layer, the etching control layer having a third chemical element which differs from the first chemical elements and the second chemical elements; generating, using an etching process, a rear-face trench extending from the rear face of the semiconductor substrate toward the semiconductor contact layer; detecting the abrupt end point detection signal using an end point detection system; and terminating the etching process depending on the end point detection signal.

Assignees

• Bosch Gmbh Robert

Inventors

• Huber Christian
• Puesche Roland

Classifications

• H10P50/246

  of Group III-V materials · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10W20/021

  of interconnections within wafers or substrates · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D64/252

  for vertical or pseudo-vertical devices · CPC title