Laser Architectures Using Quantum Well Intermixing Techniques

Patent metadata

Field	Value
Publication number	US-2024113508-A1
Application number	US-202318244752-A
Country	US
Kind code	A1
Filing date	Sep 11, 2023
Priority date	Sep 28, 2017
Publication date	Apr 4, 2024
Grant date	—

Abstract

A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.

First claim

1 . A laser chip comprising:
a plurality of laser stripes including at least one laser stripe, the at least one laser stripe including:
one or more first sub-regions along an active region of the at least one laser stripe, the one or more first sub-regions including a first transition energy, and
one or more second sub-regions along the active region, the one or more second sub-regions including a second transition energy,
wherein the second transition energy is different from the first transition energy,
wherein the one or more first sub-regions include an epitaxial wafer, and the one or more second sub-regions include the epitaxial wafer.

2 . The laser chip of claim 1 , further comprising:
an unexposed laser stripe, the unexposed laser stripe including a third transition energy, wherein the third transition energy is same as a transition energy of the epitaxial wafer.

3 . The laser chip of claim 1 , wherein the one or more first sub-regions are located proximate to facets of the at least one laser stripe, and the one or more second sub-regions are located proximate to a gain region of the at least one laser stripe.

4 . The laser chip of claim 3 , wherein the plurality of laser stripes includes another laser stripe, wherein the second transition energy of the one or more second sub-regions of the another laser stripe is same as the first transition energy of the one or more first sub-regions of the at least one laser stripe.

5 . The laser chip of claim 3 , wherein the first transition energy of the one or more first sub-regions is larger than the second transition energy of the one or more second sub-regions.

6 . The laser chip of claim 1 , further comprising:
one or more electrodes disposed along the active regions of the plurality of laser stripes, wherein for the at least one laser stripe:
the electrode of the at least one laser stripe has a first length along the active region of the at least one laser stripe,
the active region of the at least one laser strip has a second length,
wherein the first length is less than the second length.

7 . The laser chip of claim 6 , wherein the plurality of laser stripes includes another laser stripe, wherein the electrode of the another laser stripe has a third length along the active region of the another laser stripe, the third length different from the first and the second lengths.

8 . The laser chip of claim 7 , wherein the third length is longer than the first length, and
wherein the second transition energy of the another laser is larger than the second transition energy of the at least one laser stripe.

9 . The laser chip of claim 1 , wherein the one or more first sub-regions of the at least one laser stripe include the active region of the at least one laser stripe, and
wherein the one or more second sub-regions of the at least one laser stripe include lateral regions located adjacent to the active region of the at least one laser stripe.

10 . The laser chip of claim 9 , wherein the plurality of laser stripes includes another laser stripe, wherein the second transition energy of the one or more second sub-regions of the another laser stripe is same as the first transition energy of the one or more first sub-regions of the at least one laser stripe.

11 . The laser chip of claim 9 , wherein the second transition energy of the one or more second sub-regions of the at least one laser stripe is larger than the first transition energy of the one or more first sub-regions of the at least one laser stripe.

12 . The laser chip of claim 1 , wherein the one or more first sub-regions and the one or more second sub-regions of the at least one laser stripe are both located on the active region of the at least one laser stripe.

13 . The laser chip of claim 12 , wherein the first transition energy of the one or more first sub-regions is larger than the second transition energy of the one or more second sub-regions, and
wherein the one or more first sub-regions are located closer to edges of the active region of the at least one laser than the one or more second sub-regions.

14 . The laser chip of claim 1 , wherein the plurality of laser stripes includes another laser stripe, and
wherein an optical gain profile of the another laser stripe is shifted relative to an optical gain profile of the at least one laser stripe.

15 . The laser chip of claim 1 , wherein the one or more first sub-regions and the one or more second sub-regions include different amounts of intermixing.

16 . A method of fabricating a laser chip, the method comprising:
forming a plurality of laser stripes, wherein forming the plurality of laser stripes includes:
growing an epitaxial wafer; and
intermixing at least one laser stripe, wherein the intermixing includes:
intermixing one or more first sub-regions along an active region of the at least one laser stripe to a first amount;
intermixing one or more second sub-regions along the active region of the at least one laser stripe to a second amount, the second amount different from the first amount.

17 . The method of claim 16 , wherein growing the epitaxial wafer includes growing a plurality of layers, the method further comprising:
removing one or more of the plurality of layers, from the one or more first sub-regions of the at least one laser stripe, wherein the one or more first sub-regions are located proximate to facets of the at least one laser stripe; and removing one or more of the plurality of layers from the one or more second sub-regions of the at least one laser stripe, wherein the one or more second sub-regions are located proximate to a gain region of the at least one laser stripe.

18 . The method of claim 16 , wherein growing the epitaxial wafer includes growing a plurality of layers, the method further comprising:
removing one or more of the plurality of layers from the one or more first sub-regions of the at least one laser stripe, wherein the one or more first sub-regions include the active region of the at least one laser stripe; and removing one or more of the plurality of layers from the one or more second sub-regions of the at least one laser stripe, wherein the one or more second sub-regions are lateral regions located adjacent to the active region of the at least one laser stripe.

19 . The method of claim 16 , wherein growing the epitaxial wafer includes growing a plurality of layers, the method further comprising:
removing one or more of the plurality of layers from the one or more first sub-regions of the at least one laser stripe; and removing one or more of the plurality of layers from the one or more second sub-regions of the at least one laser stripe, wherein the one or more first sub-regions are located closer to edges of the active region of the at least one laser stripe than the one or more second sub-regions.

20 . The method of claim 16 , wherein forming the plurality of laser stripes further includes:
intermixing another laser stripe, wherein the intermixing includes:
intermixing one or more second sub-regions along the active region of the another laser to the first amount.

Assignees

• Apple Inc

Inventors

• Bismuto Alfredo
• Arbore Mark Alan
• Audet Ross M

Classifications

• H01S5/4087 Primary

  emitting more than one wavelength · CPC title

• H01S5/04256

  characterised by the configuration · CPC title

• H01S5/162

  with window regions made by diffusion or disordening of the active layer · CPC title

• H01S5/2059

  by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion · CPC title

• H01S5/2228

  quantum wells · CPC title