Method for processing substrate, and method for manufacturing silicon device comprising said processing method

Patent metadata

Field	Value
Publication number	US-2024112917-A1
Application number	US-202218274856-A
Country	US
Kind code	A1
Filing date	Feb 8, 2022
Priority date	Feb 10, 2021
Publication date	Apr 4, 2024
Grant date	—

Abstract

[Problem to be solved] Provided is a method for processing a substrate having high etching selectivity of silicon with respect to silicon-germanium and further having a high selection ratio of silicon with respect to a silicon oxide film and/or a silicon nitride film in surface processing when manufacturing various types of silicon devices, particularly various types of silicon composite semiconductor devices containing silicon-germanium.
[Solution] A method for processing a substrate includes: bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, in which the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.

First claim

1 . A method for processing a substrate comprising:
bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, wherein the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.

2 . The method for processing a substrate according to claim 1 , wherein
the etching solution contains a reducing compound.

3 . The method for processing a substrate according to claim 2 , wherein
the reducing compound is at least one selected from the group consisting of hydrazines, hydroxylamines, a reducing sugar, and gallic acid.

4 . The method for processing a substrate according to claim 2 , wherein
the reducing compound is a reducing sugar having no hydroxy group on 2-position carbon.

5 . The method for processing a substrate according to claim 1 , wherein
a concentration of the organic alkali contained in the etching solution is 0.05 mol/L to 2.2 mol/L.

6 . A method for manufacturing a silicon device comprising:
the method for processing a substrate according to claim 1 .

Assignees

• Tokuyama Corp

Inventors

• Seike Yoshiki
• Oshio Manami
• Nomura Naoto
• NORO Kohsuke
• Tono Seiji

Classifications

• H10P50/642 Primary

  Chemical etching · CPC title

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P50/691 Primary

  for Group V materials or Group III-V materials · CPC title

• H10D62/121

  oriented parallel to substrates · CPC title

• H10D84/0128

  Manufacturing their channels · CPC title