System And Methods Using An Inline Surface Engineering Source

Patent metadata

Field	Value
Publication number	US-2024096602-A1
Application number	US-202318516347-A
Country	US
Kind code	A1
Filing date	Nov 21, 2023
Priority date	Jun 22, 2018
Publication date	Mar 21, 2024
Grant date	—

Abstract

A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

First claim

What is claimed is:

1 . A method of implanting ions of a desired species into a workpiece, comprising:
creating a plasma within an auxiliary plasma source using a gas comprising the desired species, wherein the auxiliary plasma source is located proximate the workpiece, and wherein ions and radicals from the plasma exit the auxiliary plasma source and travel toward the workpiece; and knocking the ions and radicals from the auxiliary plasma source into the workpiece, using an ion beam created using an ion source, different from the auxiliary plasma source.

2 . The method of claim 1 , wherein the ion beam comprises an inert species.

3 . The method of claim 1 , wherein the ions and radicals from the plasma are directed toward the workpiece at a location where the ion beam impacts the workpiece.

4 . The method of claim 3 , wherein the ions and radicals form a film on a surface of the workpiece at the location where the ion beam impacts the workpiece.

5 . The method of claim 1 , wherein the desired species comprises a molecule containing a Group III, Group IV or Group V element.

6 . A method of processing a workpiece, comprising:
creating a plasma within an auxiliary plasma source using a gas comprising an etching species, wherein the auxiliary plasma source is located proximate the workpiece in an end station, wherein ions and radicals from the plasma exit the auxiliary plasma source and react with a native oxide layer on a surface of the workpiece; heating the workpiece after the reacting, wherein heat causes sublimation of the native oxide layer on the workpiece; and performing an additional process on the workpiece using an ion beam created using an ion source, different from the auxiliary plasma source, wherein the workpiece remains in the end station.

7 . The method of claim 6 , wherein the etching species is selected from the group consisting of ammonia and NF 3 .

8 . The method of claim 6 , wherein the workpiece is scanned such that a portion of the workpiece is exposed to the plasma and is then subsequently exposed to heat.

9 . The method of claim 6 , wherein the creating and heating are repeated until the surface of the workpiece is cleaned.

10 . A method of depositing material on a workpiece, comprising:
creating a plasma within an auxiliary plasma source using a process gas, wherein the auxiliary plasma source is located proximate the workpiece, and wherein ions and radicals from the plasma exit the auxiliary plasma source toward a portion of the workpiece and form a film on the portion of the workpiece; and using an ion beam created using an ion source, different from the auxiliary plasma source, to provide energy to deposit the material on the workpiece.

11 . The method of claim 10 , wherein the process gas comprises CH 4 and the ion beam comprises a Group IV element.

12 . The method of claim 10 , wherein a more box-like profile is created than would be created using only the ion beam.

13 . A method of processing a workpiece, comprising:
directing ions toward a workpiece using an ion beam; creating a plasma within an auxiliary plasma source using a process gas, wherein the auxiliary plasma source is located proximate the workpiece in an end station, wherein ions and radicals from the plasma exit the auxiliary plasma source and react with a surface of the workpiece; and heating the workpiece after the reacting, wherein heat repairs damage caused by the ion beam on the surface of the workpiece.

14 . The method of claim 13 , wherein the ion beam is used to implant ions into the workpiece.

15 . The method of claim 13 , wherein the workpiece is scanned such that a portion of the workpiece is exposed to the plasma and is then subsequently exposed to heat.

16 . The method of claim 13 , wherein the workpiece is heated to a temperature between 100° and 500° C.

17 . The method of claim 13 , wherein the process gas comprises a hydrogen/nitrogen mixture.

18 . The method of claim 13 , wherein an entirety of the workpiece is processed by the ion beam prior to the creating and heating.

19 . The method of claim 13 , wherein a portion of the workpiece is processed by the ion beam and simultaneously a second portion is reacted with the plasma.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Hatem Christopher
• Kurunczi Peter F
• Rowland Christopher A
• Olson Joseph C
• Renau Anthony

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H01J37/32422 Primary

  Arrangement for selecting ions or species in the plasma · CPC title