Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit

Patent metadata

Field	Value
Publication number	US-2024079408-A1
Application number	US-202318508015-A
Country	US
Kind code	A1
Filing date	Nov 13, 2023
Priority date	Aug 30, 2017
Publication date	Mar 7, 2024
Grant date	—

Abstract

A method includes the following operations: disconnecting at least one of drain regions that are formed on a first active area, of first transistors, from a first voltage; and disconnecting at least one of drain regions that are formed on a second active area, of second transistors coupled to the first transistors from a second voltage. The at least one of drain regions of the second transistors corresponds to the at least one of drain regions of the first transistors.

First claim

What is claimed is:

1 . A method, comprising:
forming a first active area extending along a first direction; forming a first gate and a second gate crossing over the first active area and arranged in order along the first direction; and forming a first metal contact coupled to each of a first region of the first active area and a second region of the first active area, wherein a third region of the first active area is separated from the first metal contact, and the first region, the first gate, the third region, the second gate and the second region are arranged in order along the first direction.

2 . The method of claim 1 , wherein the first metal contact is further coupled to a fourth region of the first active area,
a fifth region of the first active area is separated from the first metal contact, and the fifth region is disposed between the fourth region and the second region.

3 . The method of claim 2 , further comprising:
forming a third gate between the fifth region and the fourth region; and forming a fourth gate between the fifth region and the second region.

4 . The method of claim 2 , further comprising:
forming a third gate between a sixth region of the first active area and a seventh region of the first active area, wherein each of the sixth region and the seventh region is separated from the first metal contact.

5 . The method of claim 4 , wherein the first metal contact is further coupled to an eighth region of the first active area, and
each of the sixth region and the seventh region is disposed between the eighth region and the fourth region.

6 . The method of claim 1 , wherein the first metal contact includes an U shape portion,
a terminal of the U shape portion is coupled to the first region, and another terminal of the U shape portion is coupled to the second region.

7 . The method of claim 1 , further comprising:
forming a second active area extending along the first direction; and forming a second metal contact coupled to each of a fourth region of the second active area and a fifth region of the second active area, wherein a sixth region of the first active area is separated from the first metal contact, and the fourth region, the first gate, the sixth region, the second gate and the fifth region are arranged in order along the first direction.

8 . A method, comprising:
forming a first active area extending along a first direction; forming a first gate and a second gate crossing over the first active area and arranged in order along the first direction; and forming a first metal contact comprising a first U shape portion, wherein the first gate is disposed between a first terminal of the first U shape portion and the second gate, and the second gate is disposed between a second terminal of the first U shape portion and the first gate.

9 . The method of claim 8 , further comprising:
forming a third gate and a fourth gate crossing over the first active area and separated from each other, wherein the first metal contact further comprises a second U shape portion, the second U shape portion comprises a third terminal and shares the first terminal with the first U shape portion, each of the third gate and the fourth gate is disposed between the third terminal and the first terminal.

10 . The method of claim 9 , wherein a first region of the first active area is disposed between the first gate and the second gate, and is separated from the first metal contact, and
a second region of the first active area is disposed between the third gate and the fourth gate, and is separated from the first metal contact.

11 . The method of claim 9 , further comprising:
forming a fifth gate, a sixth gate and a seventh gate crossing over the first active area and separated from each other, wherein the first metal contact further comprises a third U shape portion, the third U shape portion comprises a fourth terminal and shares the second terminal with the first U shape portion, each of the fifth gate, the sixth gate and the seventh gate is disposed between the fourth terminal and the second terminal.

12 . The method of claim 11 , wherein a first region of the first active area is disposed between the fifth gate and the sixth gate, and is separated from the first metal contact, and
a second region of the first active area is disposed between the sixth gate and the seventh gate, and is separated from the first metal contact.

13 . The method of claim 12 , wherein the sixth gate is disposed between the first region and the second region.

14 . The method of claim 9 , further comprising:
forming a second active area extending along the first direction; and forming a second metal contact comprising a third U shape portion, wherein the first gate is disposed between a fourth terminal of the third U shape portion and the second gate, the second gate is disposed between a fifth terminal of the third U shape portion and the first gate, the first metal contact is configured to provide a first voltage to the first active area, the second metal contact is configured to provide a second voltage to the second active area, and the first voltage is different from the second voltage.

15 . The method of claim 14 , wherein a first region of the first active area is disposed between the first gate and the second gate, and is separated from the first metal contact, and
a second region of the second active area is disposed between the first gate and the second gate, and is separated from the second metal contact.

16 . The method of claim 14 , wherein the second metal contact further comprises a fourth U shape portion,
the fourth U shape portion comprises a fifth terminal and shares the fourth terminal with the third U shape portion, and each of the third gate and the fourth gate is disposed between the fifth terminal and the fourth terminal.

17 . A method, comprising:
forming a first active area extending along a first direction; forming a second active area extending along the first direction; forming a first gate and a second gate crossing over the first active area and the second active area; and forming a first metal contact, a second metal contact and a third metal contact separated from each other, wherein the first metal contact and the second metal contact are coupled to the first active area and the second active area, respectively, the third metal contact is coupled to each of the first active area and the second active area, and the first gate, the second gate and the third metal contact are arranged in order along the first direction.

18 . The method of claim 17 , wherein
a first region of the first active area is separated from each of the first metal contact and the second metal contact, and is coupled to the third metal contact, and a second region of the second active area is separated from each of the first metal contact and the second metal contact, and is coupled to the third metal contact.

19 . The method of claim 17 , further comprising:
forming a fourth metal contact disposed between the first gate and the second gate, and separated from each of the first metal contact, the second metal contact and the third metal contact.

20 . The method of claim 19 , wherein
a first region of the first active area is separated from each of the first metal contact, the second metal contact and the third metal contact, and is coupled to the fourth metal contact, and a second region of the second acti

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Yi-Feng
• Peng Po-Lin
• Lee Jam-Wem

Classifications

• H10D89/713

  including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices · CPC title

• H10D84/0186

  Manufacturing their interconnections or electrodes, e.g. source or drain electrodes · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D62/371

  Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current · CPC title

• H10D62/115

  Dielectric isolations, e.g. air gaps · CPC title