Light detector, light detection system, lidar device, and mobile body

Patent metadata

Field	Value
Publication number	US-2024072191-A1
Application number	US-202318174597-A
Country	US
Kind code	A1
Filing date	Feb 24, 2023
Priority date	Aug 26, 2022
Publication date	Feb 29, 2024
Grant date	—

Abstract

A light detector includes a semiconductor layer and a light-receiving element. The semiconductor layer is of a first conductivity type. The light-receiving element includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is of a second conductivity type. The second semiconductor region is located between the first semiconductor region and the semiconductor layer. The second semiconductor region is of the first conductivity type and contacts the first semiconductor region. The third semiconductor region is located between the second semiconductor region and the semiconductor layer. The third semiconductor region is of the second conductivity type. The fourth semiconductor region is located between the third semiconductor region and the semiconductor layer. The fourth semiconductor region is of the first conductivity type, and has a lower first-conductivity-type impurity concentration than a first-conductivity-type impurity concentration of the semiconductor layer.

First claim

What is claimed is:

1 . A light detector, comprising:
a semiconductor layer of a first conductivity type; and a light-receiving element, the light-receiving element including
a first semiconductor region of a second conductivity type,
a second semiconductor region located between the first semiconductor region and the semiconductor layer, the second semiconductor region being of the first conductivity type and contacting the first semiconductor region,
a third semiconductor region located between the second semiconductor region and the semiconductor layer, the third semiconductor region being of the second conductivity type, and
a fourth semiconductor region located between the third semiconductor region and the semiconductor layer, the fourth semiconductor region being of the first conductivity type and having a lower first-conductivity-type impurity concentration than a first-conductivity-type impurity concentration of the semiconductor layer.

2 . The detector according to claim 1 , further comprising:
a structure part having a different refractive index from the light-receiving element, the third semiconductor region being arranged with the structure part in a direction orthogonal to a first direction, the first direction being from the semiconductor layer toward the light-receiving element.

3 . The detector according to claim 1 , wherein
a first-conductivity-type impurity concentration at a boundary between the first semiconductor region and the second semiconductor region is greater than a first-conductivity-type impurity concentration at a boundary between the third semiconductor region and the fourth semiconductor region.

4 . The detector according to claim 1 , wherein
a maximum value of a second-conductivity-type impurity concentration in the third semiconductor region is less than a maximum value of a first-conductivity-type impurity concentration in the second semiconductor region.

5 . The detector according to claim 1 , wherein
the third semiconductor region contacts the fourth semiconductor region.

6 . The detector according to claim 1 , wherein
the light-receiving element further includes a fifth semiconductor region located between the second semiconductor region and the third semiconductor region, the fifth semiconductor region is of the first conductivity type, and a first-conductivity-type impurity concentration of the light-receiving element has a minimum in the fifth semiconductor region.

7 . The detector according to claim 6 , wherein
a first-conductivity-type impurity concentration at a boundary between the third semiconductor region and the fourth semiconductor region is greater than a first-conductivity-type impurity concentration in the fifth semiconductor region.

8 . The detector according to claim 1 , wherein
the third semiconductor region contacts the second semiconductor region, the third semiconductor regions contacts the fourth semiconductor region, and a first-conductivity-type impurity concentration at a boundary between the third semiconductor region and the fourth semiconductor region is greater than a first-conductivity-type impurity concentration at a boundary between the third semiconductor region and the second semiconductor region.

9 . The detector according to claim 1 , wherein
the light-receiving element further includes a fifth semiconductor region located between the third semiconductor region and the fourth semiconductor region, the fifth semiconductor region is of the first conductivity type, and a first-conductivity-type impurity concentration of the light-receiving element has a minimum in the fifth semiconductor region.

10 . The detector according to claim 1 , wherein
a thickness of the third semiconductor region is less than a thickness of the second semiconductor region.

11 . The detector according to claim 6 , wherein
a thickness of the fifth semiconductor region between the second semiconductor region and the third semiconductor region is greater than a thickness of the third semiconductor region.

12 . The detector according to claim 1 , wherein
a depletion layer is formed in a range including a boundary between the first semiconductor region and the second semiconductor region when the light-receiving element operates, and an end portion of the depletion layer is positioned inside the fourth semiconductor region.

13 . The detector according to claim 1 , further comprising:
a resistor electrically connected with the light-receiving element, or a switching element electrically connected with the light-receiving element.

14 . The detector according to claim 1 , wherein
the light-receiving element is a p-i-n diode or an avalanche photodiode.

15 . The detector according to claim 14 , wherein
the avalanche photodiode operates in a Geiger mode.

16 . A light detection system, comprising:
the detector according to claim 1 ; and a distance measuring circuit calculating a time-of-flight of light based on an output signal of the detector.

17 . A lidar device, comprising:
a light source irradiating light on an object; and the light detection system according to claim 16 , the light detection system detecting light reflected by the object.

18 . The device according to claim 17 , further comprising:
an image recognition system generating a three-dimensional image based on an arrangement relationship of the light source and the detector.

19 . A mobile body, comprising:
the device according to claim 17 .

Assignees

• Toshiba Kk

Inventors

• Shimizu Mariko
• Suzuki Kazuhiro
• Fujiwara Ikuo
• Kaneko Ryoma
• Sasaki Keita

Classifications

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/184

  Infrared image sensors · CPC title

• H10F39/806

  Optical elements or arrangements associated with the image sensors · CPC title