Solid-state imaging element and imaging device

Patent metadata

Field	Value
Publication number	US-2024072093-A1
Application number	US-202118259590-A
Country	US
Kind code	A1
Filing date	Dec 20, 2021
Priority date	Jan 6, 2021
Publication date	Feb 29, 2024
Grant date	—

Abstract

A solid-state imaging element ( 200 ) according to the present disclosure includes a light receiving substrate ( 201 ) and a circuit board ( 202 ). The light receiving substrate ( 201 ) includes a plurality of light receiving circuits ( 211 ) in which photoelectric conversion elements are provided. The circuit board ( 202 ) is bonded to the light receiving substrate ( 201 ) and includes a plurality of address event detection circuits ( 231 ) that respectively detects voltage changes output from the photoelectric conversion elements of the plurality of light receiving circuits ( 211 ). The circuit board ( 202 ) includes a first element region ( 501 ) and a second element region ( 502 ). In the first element region ( 501 ), a first transistor (T 1 ) driven by a first voltage (VDD 1 ) is arranged. In the second element region ( 502 ), a second transistor (T 2 ) driven by a second voltage (VDD 2 ) lower than the first voltage (VDD 1 ) is arranged. A full trench isolation (FTI) structure ( 521 ) is arranged between the first element region ( 501 ) and the second element region ( 502 ) adjacent to each other.

First claim

1 . A solid-state imaging element comprising:
a light receiving substrate including a plurality of light receiving circuits provided with photoelectric conversion elements; and a circuit board that is bonded to the light receiving substrate and includes a plurality of address event detection circuits that respectively detects voltage changes output from the photoelectric conversion elements of the plurality of light receiving circuits, wherein the circuit board includes a first element region in which a first transistor driven by a first voltage is arranged, and a second element region in which a second transistor driven by a second voltage lower than the first voltage is arranged, and a full trench isolation (FTI) structure is arranged between the first element region and the second element region adjacent to each other.

2 . The solid-state imaging element according to claim 1 , wherein
an end portion on an opposite side of a light incident side of the FTI structure is in contact with an insulating layer.

3 . The solid-state imaging element according to claim 2 , wherein
a part of the end portion on the opposite side of the light incident side of the FTI structure is in contact with the insulating layer.

4 . The solid-state imaging element according to claim 1 , wherein
an end portion on an opposite side of a light incident side of the FTI structure is in contact with a well layer of a conductivity type different from that of a first well region located in the first element region.

5 . The solid-state imaging element according to claim 4 , wherein
a part of the end portion on the opposite side of the light incident side of the FTI structure is in contact with the well layer.

6 . The solid-state imaging element according to claim 1 , wherein
wiring lines of the light receiving substrate and the circuit board are directly bonded to each other.

7 . The solid-state imaging element according to claim 1 , wherein
wiring lines of the light receiving substrate and the circuit board are connected to each other by a via.

8 . The solid-state imaging element according to claim 1 , wherein
the second element region includes a second well region of a first conductivity type and a third well region of a second conductivity type, and another FTI structure is arranged between the second well region and the third well region adjacent to each other.

9 . An imaging device comprising:
a lens; a solid-state imaging element; and a control unit that controls the solid-state imaging element, wherein the solid-state imaging element includes a light receiving substrate including a plurality of light receiving circuits provided with photoelectric conversion elements, a circuit board that is bonded to the light receiving substrate and includes a plurality of address event detection circuits that respectively detects voltage changes output from the photoelectric conversion elements of the plurality of light receiving circuits, and a signal processing unit that performs signal processing on an output of the solid-state imaging element, the circuit board includes a first element region in which a first transistor driven by a first voltage is arranged, and a second element region in which a second transistor driven by a second voltage lower than the first voltage is arranged, and a full trench isolation (FTI) structure is arranged between the first element region and the second element region adjacent to each other.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Miyake Shinichi
• Tomida Kazuyuki
• Niwa Atsumi

Classifications

• H10W90/792

  between multiple chips · CPC title

• H10W72/90

  Bond pads, in general · CPC title

• H10F39/8063 Primary

  Microlenses · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/018

  of hybrid image sensors · CPC title