Substrate processing method

Patent metadata

Field	Value
Publication number	US-2024071748-A1
Application number	US-202318238063-A
Country	US
Kind code	A1
Filing date	Aug 25, 2023
Priority date	Aug 30, 2022
Publication date	Feb 29, 2024
Grant date	—

Abstract

A substrate processing method includes providing, in a reaction space, a substrate including two gaps in a surface thereof, and filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space, wherein a difference of filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced by adjusting a pulse frequency of pulsed plasma.

First claim

What is claimed is:

1 . A substrate processing method comprising:
providing, in a reaction space, a substrate having a surface on which a first gap and a second gap are formed, wherein the first gap has a first cross-sectional diameter in a horizontal direction, and the second gap has a second cross-sectional diameter greater than the first cross-sectional diameter, in the horizontal direction; and
filling the first gap and the second gap with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space,
wherein the filling comprises:
setting a reference pulse frequency that is an arbitrary reference of pulsed plasma; and
filling the first gap and the second gap with the flowable film while supplying the pulsed plasma with an execution pulse frequency smaller than the reference pulse frequency,
wherein, by performing the filling while supplying the pulsed plasma with the execution pulse frequency smaller than the reference pulse frequency, a filling height increase rate of the flowable film in the first gap relatively increases and at the same time, a filling height increase rate of the flowable film in the second gap relatively decreases so that a height difference between a filling height of the flowable film filled in the first gap and a filling height of the flowable film filled in the second gap is decreased.

2 . The substrate processing method of claim 1 , wherein, by performing the filling while supplying the pulsed plasma with the execution pulse frequency smaller than the reference pulse frequency, a filling speed of the flowable film in the first gap relatively increases and at the same time, a filling speed of the flowable film in the second gap relatively decreases so that a difference between the filling speed of the flowable film filled in the first gap and the filling speed of the flowable film filled in the second gap is decreased.

3 . The substrate processing method of claim 1 , wherein an internal volume of the first gap is smaller than an internal volume of the second gap.

4 . The substrate processing method of claim 1 , wherein the execution pulse frequency is within a range between about 0.5 KHz and about 100 KHz.

5 . The substrate processing method of claim 1 , wherein a duty ratio of the pulsed plasma is within a range between about 1% and about 99%.

6 . The substrate processing method of claim 1 , wherein vertical depths of the first gap and the second gap are within a range between about 100 nm and about 5,000 nm, and
horizontal widths of the first gap and the second gap are within a range between about 50 nm and about 1,000 nm.

7 . The substrate processing method of claim 5 , wherein magnitudes of the reference pulse frequency and the execution pulse frequency are compared based on the pulsed plasma having a same duty ratio.

8 . The substrate processing method of claim 1 , wherein pressure of the reaction space during the filling of the first gap and the second gap with the flowable film is within a range from about 1 Torr to about 10 Torr.

9 . The substrate processing method of claim 1 , wherein the filling of the first gap and the second gap with the flowable film is performed at a process temperature between about 0° C. and about 150° C.

10 . The substrate processing method of claim 1 , wherein the precursor supplied to the reaction space comprises a silicon-containing precursor and the reactant gas comprises a nitrogen-containing gas.

11 . The substrate processing method of claim 10 , wherein the silicon precursor comprises at least one of aminosilanes, iodosilanes, silicon halides, and an oligomer silicon (Si) source, or at least one of mixtures thereof.

12 . The substrate processing method of claim 10 , wherein the silicon precursor comprises at least one of TSA, (SiH 3 ) 3 N; DSO, (SiH 3 ) 2 ; DSMA, (SiH 3 ) 2 NMe; DSEA, (SiH 3 ) 2 NEt; DSIPA, (SiH 3 ) 2 N(iPr); DSTBA, (SiH 3 ) 2 N(tBu); DEAS, SiH 3 NEt 2 ; DTBAS, SiH 3 N(tBu) 2 ; BDEAS, SiH 2 (NEt 2 ) 2 ; BDMAS, SiH 2 (NMe 2 ) 2 ; BTBAS, SiH 2 (NHtBu) 2 ; BITS, SiH 2 (NHSiMe 3 ) 2 ; DIPAS, SiH 3 N(iPr) 2 ; TEOS, Si(OEt) 4 ; SiCl 4 ; HCD, Si 2 Cl 6 ; 3DMAS, SiH(N(Me) 2 ) 3 ; BEMAS, SiH 2 [N(Et)(Me)] 2 ; AHEAD, Si 2 (NHEt) 6 ; TEAS, Si(NHEt) 4 ; Si 3 H 8 ; DCS, SiH 2 Cl 2 ; SiHI 3 ; SiH 2 I 2 ; dimer-trisilylamine; trimer-trisilylamine; tetramer-trisilylamine; pentamer-trisilylamine; hexamer-trisilylamine; heptamer-trisilylamine; and octamer-trisilylamine, or at least one of derivatives or mixtures thereof.

13 . A substrate processing method comprising:
providing, in a reaction space, a substrate including two gaps in a surface thereof; and filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space, wherein a difference of filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced by adjusting a pulse frequency of pulsed plasma.

14 . The substrate processing method of claim 13 , wherein the adjusting of the pulse frequency of the pulsed plasma comprises:
setting a reference pulse frequency that is an arbitrary reference of the pulsed plasma; and setting an execution pulse frequency smaller than the reference pulse frequency, wherein the difference of the filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced while supplying the pulsed plasma with the execution pulse frequency.

15 . The substrate processing method of claim 14 , wherein the at least two gaps comprise a first gap and a second gap, wherein the first gap has a first cross-sectional diameter in a horizontal direction, and the second gap has a second cross-sectional diameter greater than the first cross-sectional diameter, in the horizontal direction, and
by filling the at least two gaps with the flowable film while supplying the pulsed plasma with the execution pulse frequency, a filling height increase rate of the flowable film in the first gap relatively increases and at the same time, a filling height increase rate of the flowable film in the second gap relatively decreases so that a height difference between a filling height of the flowable film filled in the first gap and a filling height of the flowable film filled in the second gap is decreased.

16 . The substrate processing method of claim 13 , wherein the adjusting of the pulse frequency of the pulsed plasma comprises:
setting a reference pulse frequency that is an arbitrary reference of the pulsed plasma; and setting an execution pulse frequency smaller than the reference pulse frequency, wherein a difference of filling speeds of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced while supplying the pulsed plasma with the execution pulse frequency.

17 . The substrate processing method of claim 16 , wherein the at least two gaps comprise a first gap and a second gap, wherein the first gap has a first cross-sectional diameter in a horizontal direction, and the second gap has a second cross-sectional diameter greater than the first cross-sectional diameter, in the horizontal direction, and
by filling the at least two gaps with the flowable film while supplying the pulsed plasma with the execution pulse frequency, a filling speed of the flowable film in the first gap relatively increases and at the same time, a filling speed of the flowable film in the second gap relatively decreases so that a filling speed difference between the

Assignees

• Asm Ip Holding Bv

Inventors

• Yong Sangheon
• Kim Hongsuk
• Choi Sungha
• Park Juhyuk
• Kim Kihun
• Yang Jihye

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title