Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Patent metadata

Field	Value
Publication number	US-2024047532-A1
Application number	US-202318340278-A
Country	US
Kind code	A1
Filing date	Jun 23, 2023
Priority date	Aug 3, 2022
Publication date	Feb 8, 2024
Grant date	—

Abstract

A silicon carbide semiconductor device has a first semiconductor region of a first conductivity type, provided in a semiconductor substrate, spanning an active region and a termination region. A second semiconductor region of a second conductivity type is provided between a first main surface and the first semiconductor region, in the active region. A device structure having a first pn junction is provided between the first and second semiconductor regions. An outer peripheral portion of the active region is provided between the first main surface and the first semiconductor region in the active region, and constitutes a second-conductivity-type outer peripheral region that surrounds a periphery of the device structure and forms a second pn junction with the first semiconductor region. A first protective film is provided on the first main surface. The first protective film blocks light generated by a forward current passing through the first and second pn junctions.

First claim

What is claimed is:

1 . A silicon carbide semiconductor device, comprising:
a semiconductor substrate containing silicon carbide and having a first main surface and a second main surface opposite to each other; an active region provided on the semiconductor substrate; a termination region provided on the semiconductor substrate and surrounding a periphery of the active region; a first semiconductor region of a first conductivity type, provided in the semiconductor substrate, spanning the active region and the termination region; a second semiconductor region of a second conductivity type, provided between the first main surface and the first semiconductor region, in the active region; a device structure having a first pn junction between the first semiconductor region and the second semiconductor region, in the active region, a first forward current passing through the first pn junction; a first electrode provided at the first main surface and electrically connected to the second semiconductor region and a second-conductivity-type outer peripheral region; a second electrode provided at the second main surface and electrically connected to the first semiconductor region; and a first protective film selectively provided on the first main surface, wherein the active region includes an outer peripheral portion, provided between the first main surface and the first semiconductor region, the outer peripheral portion constituting the second-conductivity-type outer peripheral region that surrounds a periphery of the device structure, the outer peripheral portion forming a second pn junction with the first semiconductor region, a second forward current passing through the second pn junction, the termination region includes a voltage withstanding structure, provided between the first main surface and the first semiconductor region, and the first protective film blocks light generated by the second forward current that passes through the second pn junction.

2 . The silicon carbide semiconductor device according to claim 1 , wherein
the first protective film is selectively provided at the first main surface.

3 . The silicon carbide semiconductor device according to claim 1 , wherein
the first protective film is an organic film provided in the termination region and the outer peripheral portion of the active region.

4 . The silicon carbide semiconductor device according to claim 1 , wherein
the first protective film is a first inorganic film provided in the termination region and the outer peripheral portion of the active region.

5 . The silicon carbide semiconductor device according to claim 4 , wherein
the first inorganic film is a non-doped polysilicon film or an amorphous silicon film.

6 . The silicon carbide semiconductor device according to claim 1 , further comprising
a second protective film provided at the first main surface, in the termination region and the outer peripheral portion of the active region, wherein the first protective film is provided on the second protective film.

7 . The silicon carbide semiconductor device according to claim 1 , wherein
the first protective film is further provided at an upper portion of the device structure, and blocks light generated by the first forward current that passes through the first pn junction.

8 . The silicon carbide semiconductor device according to claim 1 , wherein
the first protective film is a second inorganic film provided on the first main surface, in the device structure of the active region.

9 . The silicon carbide semiconductor device according to claim 8 , wherein
the second inorganic film is a polysilicon film or an amorphous silicon film.

10 . The silicon carbide semiconductor device according to claim 8 , wherein
the second inorganic film is provided at an entire surface of the first electrode, excluding a portion where the first electrode and the second semiconductor region are in contact with each other.

11 . A method of manufacturing a silicon carbide semiconductor device having a semiconductor substrate containing silicon carbide and having a first main surface and a second main surface opposite to each other; an active region provided on the semiconductor substrate; and a termination region provided on the semiconductor substrate and surrounding the active region, the method comprising:
forming a first semiconductor region of a first conductivity type, in the semiconductor substrate, spanning the active region and the termination region; forming a second semiconductor region of a second conductivity type, between the first main surface and the first semiconductor region, in the active region; forming a device structure having a first pn junction between the first semiconductor region and the second semiconductor region, a current that passes through the first pn junction flowing through the device structure; forming, in the active region, an outer peripheral portion of the active region, the outer peripheral portion having a second pn junction between a second-conductivity-type outer peripheral region and the first semiconductor region, the outer peripheral portion forming the second-conductivity-type outer peripheral region between the first main surface and the first semiconductor region, the second-conductivity-type outer peripheral region surrounding a periphery of the device structure; forming a voltage withstanding structure between the first main surface and the first semiconductor region, in the termination region; forming a first electrode at the first main surface, the first electrode being electrically connected to the second semiconductor region and the second-conductivity-type outer peripheral region; forming a second electrode at the second main surface, the second electrode being electrically connected to the first semiconductor region; and selectively forming, on the first main surface, a first protective film blocking light generated by a flow of forward current through the first and second pn junctions.

12 . The method according to claim 11 , wherein
forming the first protective film includes forming a polyimide film by injecting oxygen during polyimide application.

13 . The method according to claim 11 , wherein
forming the first protective film includes forming a polyimide film having a thickness of 15 μm or greater.

14 . The method according to claim 11 , wherein
forming the first protective film includes forming a polysilicon film.

Assignees

• Fuji Electric Co Ltd

Inventors

• Hoshi Yasuyuki
• Hayashi Shingo

Classifications

• H10W74/147

  the encapsulations being multilayered · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H10W42/20 Primary

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title

• H10D12/038

  having a recessed gate, e.g. trench-gate IGBTs · CPC title

• H10D64/252

  for vertical or pseudo-vertical devices · CPC title