Resist composition and method for forming resist pattern

US2024036468A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2024036468-A1
Application numberUS-202118256899-A
CountryUS
Kind codeA1
Filing dateDec 24, 2021
Priority dateDec 28, 2020
Publication dateFeb 1, 2024
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A resist composition containing a resin component having a constitutional unit containing a phenolic hydroxyl group and a compound represented by General Formula (b0-1), in which the proportion of the constitutional unit in the resin component is more than 5% by mole and less than 45% by mole with respect to the total (100% by mole) of all constitutional units constituting the resin component. In the formula, R b1 represents a hydrocarbon group having 1 or more and 30 or less carbon atoms, n and m represents an integer in a range of 0 to 3, R a1 and R a2 represents a hydrogen atom or an organic group, Q 1 and Q 2 represent a fluorine atom or a perfluoroalkyl group having 1 or more and 6 or less carbon atoms, and L represents an ester bond

First claim

Opening claim text (preview).

What is claimed is: 1 . A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising: a resin component (A1) exhibiting changed solubility in a developing solution under action of acid; and an acid generator component (B) generating an acid upon exposure, wherein the resin component (A1) has a constitutional unit (a10) represented by General Formula (a10-1), the acid generator component (B) contains a compound (B0) represented by General Formula (b0-1), and a proportion of the constitutional unit (a10) in the resin component (A1) is more than 5% by mole and less than 45% by mole with respect to a total (100% by mole) of all constitutional units constituting the resin component (A1), wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya x1 represents a single bond or a divalent linking group; Wa x1 represents an aromatic hydrocarbon group which may have a substituent; and n ax1 represents an integer of 1 or more, wherein R b1 represents a hydrocarbon group having 1 or more and 30 or less carbon atoms; when the hydrocarbon group as R b1 contains one or more methylene groups, at least part of the methylene groups may be substituted with a group selected from the group consisting of —O—, —S—, —CO—, —CO—O—, —SO—, —SO 2 —, CR b4 R b5 , and NR b6 —; when the hydrocarbon group R b1 contains a hydrocarbon ring, at least one of the carbon atoms constituting the hydrocarbon ring may be substituted with a hetero atom selected from the group consisting of N, O, P, S, and Se, or an atomic group containing the hetero atom; R b4 and R b5 each independently represents a hydrogen atom or a halogen atom, at least one of R b4 and R b5 represents a halogen atom, and R b6 represents a hydrogen atom or a hydrocarbon group having 1 or more and 6 or less carbon atoms; n and m of (R a1 )n and (R a2 )m represent an integer in a range of 0 to 3, R a1 and R a2 each independently represents a hydrogen atom or an organic group; Q 1 and Q 2 each independently represents a fluorine atom or a perfluoroalkyl group having 1 or more and 6 or less carbon atoms; and L represents an ester bond. 2 . The resist composition according to claim 1 , wherein a solid content concentration is 20% by mass or more. 3 . The resist composition according to claim 1 , further comprising a polyether compound (Z). 4 . A method for forming a resist pattern, comprising: forming a resist film on a support using the resist composition according to claim 1 ; exposing the resist film; and developing the exposed resist film to form a resist pattern. 5 . The method for forming a resist pattern according to claim 4 , wherein a film thickness of the resist film is 5 μm or more.

Assignees

Inventors

Classifications

  • G03F7/039Primary

    Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

  • with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

  • G03F7/004Primary

    Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

  • Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

  • the macromolecular compound having an alicyclic moiety in a side chain · CPC title

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What does patent US2024036468A1 cover?
A resist composition containing a resin component having a constitutional unit containing a phenolic hydroxyl group and a compound represented by General Formula (b0-1), in which the proportion of the constitutional unit in the resin component is more than 5% by mole and less than 45% by mole with respect to the total (100% by mole) of all constitutional units constituting the resin component. …
Who is the assignee on this patent?
Tokyo Ohka Kogyo Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/039. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Feb 01 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).