What is claimed is:
1 . A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising:
a resin component (A1) exhibiting changed solubility in a developing solution under action of acid; and an acid generator component (B) generating an acid upon exposure, wherein the resin component (A1) has a constitutional unit (a10) represented by General Formula (a10-1), the acid generator component (B) contains a compound (B0) represented by General Formula (b0-1), and a proportion of the constitutional unit (a10) in the resin component (A1) is more than 5% by mole and less than 45% by mole with respect to a total (100% by mole) of all constitutional units constituting the resin component (A1),
wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya x1 represents a single bond or a divalent linking group; Wa x1 represents an aromatic hydrocarbon group which may have a substituent; and n ax1 represents an integer of 1 or more,
wherein R b1 represents a hydrocarbon group having 1 or more and 30 or less carbon atoms; when the hydrocarbon group as R b1 contains one or more methylene groups, at least part of the methylene groups may be substituted with a group selected from the group consisting of —O—, —S—, —CO—, —CO—O—, —SO—, —SO 2 —, CR b4 R b5 , and NR b6 —; when the hydrocarbon group R b1 contains a hydrocarbon ring, at least one of the carbon atoms constituting the hydrocarbon ring may be substituted with a hetero atom selected from the group consisting of N, O, P, S, and Se, or an atomic group containing the hetero atom; R b4 and R b5 each independently represents a hydrogen atom or a halogen atom, at least one of R b4 and R b5 represents a halogen atom, and R b6 represents a hydrogen atom or a hydrocarbon group having 1 or more and 6 or less carbon atoms; n and m of (R a1 )n and (R a2 )m represent an integer in a range of 0 to 3, R a1 and R a2 each independently represents a hydrogen atom or an organic group; Q 1 and Q 2 each independently represents a fluorine atom or a perfluoroalkyl group having 1 or more and 6 or less carbon atoms; and L represents an ester bond.
2 . The resist composition according to claim 1 , wherein a solid content concentration is 20% by mass or more.
3 . The resist composition according to claim 1 , further comprising a polyether compound (Z).
4 . A method for forming a resist pattern, comprising:
forming a resist film on a support using the resist composition according to claim 1 ; exposing the resist film; and developing the exposed resist film to form a resist pattern.
5 . The method for forming a resist pattern according to claim 4 , wherein a film thickness of the resist film is 5 μm or more.