Light-emitting device and electronic apparatus including the same

Patent metadata

Field	Value
Publication number	US-2023422537-A1
Application number	US-202318193218-A
Country	US
Kind code	A1
Filing date	Mar 30, 2023
Priority date	Jun 24, 2022
Publication date	Dec 28, 2023
Grant date	—

Abstract

Provided is a light-emitting device including: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the emission layer includes: a first emission layer including a first quantum dot and a p-type compound; and a second emission layer including a second quantum dot and an n-type compound, the second emission layer is in a direction of the first electrode, and the first electrode is a cathode.

First claim

What is claimed is:

1 . A light-emitting device comprising:
a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and comprising an emission layer, wherein the emission layer comprises: a first emission layer comprising a first quantum dot and a p-type compound; and a second emission layer comprising a second quantum dot and an n-type compound, the second emission layer is in a direction of the first electrode, and the first electrode is a cathode.

2 . The light-emitting device of claim 1 , wherein the first electrode comprises indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO), or any combination thereof.

3 . The light-emitting device of claim 1 , wherein the first electrode comprises magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), or any combination thereof.

4 . The light-emitting device of claim 1 , wherein the first emission layer is in direct contact with the second emission layer.

5 . The light-emitting device of claim 1 , wherein:
the interlayer further comprises an electron transport layer, and the second emission layer is in direct contact with the electron transport layer.

6 . The light-emitting device of claim 1 , wherein:
the interlayer further comprises a hole transport layer, and the first emission layer is in direct contact with the hole transport layer.

7 . The light-emitting device of claim 1 , wherein the p-type compound in the first emission layer has a highest occupied molecular orbital (HOMO) energy level of about −5.3 eV or less.

8 . The light-emitting device of claim 1 , wherein a difference between a highest occupied molecular orbital (HOMO) energy level of the p-type compound and a valence band of the first quantum dot in the first emission layer is about 1.0 eV or less.

9 . The light-emitting device of claim 1 , wherein the n-type compound in the second emission layer has a lowest unoccupied molecular orbital (LUMO) energy level of about −4.0 eV or more.

10 . The light-emitting device of claim 1 , wherein a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the n-type compound and a conduction band of the second quantum dot in the second emission layer is about 0.5 eV or less.

11 . The light-emitting device of claim 1 , wherein the p-type compound comprises a compound comprising one of moieties below:

12 . The light-emitting device of claim 11 , wherein the p-type compound comprises a low molecular weight compound having a molecular weight of 1,000 or less, an oligomer compound having a molecular weight of about 1,000 to about 10,000, or a polymer compound having a molecular weight of 10,000 or more, each comprising one of Moieties 1 to 11, or any combination thereof.

13 . The light-emitting device of claim 1 , wherein the n-type compound comprises a compound comprising one of moieties below:

14 . The light-emitting device of claim 13 , wherein the n-type compound comprises a low molecular weight compound having a molecular weight of 1,000 or less, an oligomer compound having a molecular weight of about 1,000 to about 10,000, or a polymer compound having a molecular weight of 10,000 or more, each comprising one of Moieties 21 to 26, or any combination thereof.

15 . The light-emitting device of claim 1 , wherein the first and second quantum dots each independently comprise: a Group II-VI semiconductor compound; a Group III-V semiconductor compound; a Group III-VI semiconductor compound; a Group I-III-VI semiconductor compound; a Group IV-VI semiconductor compound; a Group IV element or compound; or any combination thereof.

16 . The light-emitting device of claim 15 , wherein:
the semiconductor compound comprises ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, InGaZnP, InAlZnP, GaS, GaSe, Ga 2 Se 3 , GaTe, InS, InSe, In 2 S 3 , In 2 Se 3 , InTe, InGaS 3 , InGaSe 3 , AgInS, AgInS 2 , CuInS, CuInS 2 , CuGaO 2 , AgGaO 2 , AgAlO 2 , SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, or any combination thereof, and the Group IV element or compound comprises Si, Ge, SiC, SiGe, or any combination thereof.

17 . The light-emitting device of claim 1 , wherein, in the first emission layer, the first quantum dot comprises a metal, and a bond between the p-type compound and the metal is a coordinate bond.

18 . The light-emitting device of claim 1 , wherein in the second emission layer, the second quantum dot comprises a metal, and a bond between the n-type compound and the metal is a coordinate bond.

19 . An electronic apparatus comprising the light-emitting device of claim 1 .

20 . The electronic apparatus of claim 19 , further comprising:
a thin-film transistor, wherein: the thin-film transistor comprises a source electrode and a drain electrode, and the first electrode of the light-emitting device is electrically connected to at least one of the source electrode and the drain electrode of the thin-film transistor.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Jonghoon
• Kim Sehun
• Lee Changhee
• Kang Jingoo
• Kim Yonghwi
• Park Myoungjin
• Ha Jaekook

Classifications

• H10K2101/30

  Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values · CPC title

• H10K2102/102

  comprising tin oxides, e.g. fluorine-doped SnO2 · CPC title

• H10K2102/103

  comprising indium oxides, e.g. ITO · CPC title

• H10K85/626

  containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene · CPC title

• H10K85/633

  comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom · CPC title