Etching gas composition, substrate processing apparatus, and pattern forming method using the etching gas composition

Patent metadata

Field	Value
Publication number	US-2023407175-A1
Application number	US-202318202872-A
Country	US
Kind code	A1
Filing date	May 26, 2023
Priority date	Jun 21, 2022
Publication date	Dec 21, 2023
Grant date	—

Abstract

An etching gas composition includes at least two C 3 or C 4 organic fluorine compounds and tantalum fluoride, and the at least two C 3 or C 4 organic fluorine compounds are isomers.

First claim

What is claimed is:

1 . An etching gas composition comprising:
at least two C 3 or C 4 organic fluorine compounds; and tantalum fluoride, wherein the at least two C 3 or C 4 organic fluorine compounds are isomers.

2 . The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds each have a formula of C 3 H 2 F 6 .

3 . The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds are selected from among 1,1,1,3,3,3-hexafluoropropane, 1,1,1,2,3,3-hexafluoropropane, and 1,1,2,2,3,3-hexafluoropropane.

4 . The etching gas composition of claim 1 , wherein the tantalum fluoride has a formula of TaF 5 .

5 . The etching gas composition of claim 3 , wherein the at least two C 3 or C 4 organic fluorine compounds comprise a first organic fluorine compound and a second organic fluorine compound,
the first organic fluorine compound is 1,1,1,2,3,3-hexafluoropropane, and the second organic fluorine compound is selected from among 1,1,1,3,3,3-hexafluoropropane and 1,1,2,2,3,3-hexafluoropropane.

6 . The etching gas composition of claim 3 , wherein the at least two C 3 or C 4 organic fluorine compounds comprise a first organic fluorine compound and a second organic fluorine compound,
the first organic fluorine compound is 1,1,1,3,3,3-hexafluoropropane, and the second organic fluorine compound is 1,1,2,2,3,3-hexafluoropropane.

7 . The etching gas composition of claim 1 , wherein the tantalum fluoride is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.

8 . The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds each have a formula of C 4 H 2 F 6 .

9 . The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds are selected from among hexafluoroisobutene, (2Z)-1,1,1,4,4,4-hexafluoro-2-butene, 2,3,3,4,4,4-hexafluoro-1-butene, (2Z)-1,1,1,2,4,4-hexafluoro-2-butene, (2Z)-1,1,2,3,4,4-hexafluoro-2-butene, 1,1,2,3,4,4-hexafluoro-2-butene, (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane, and 1,1,2,2,3,3-hexafluorocyclobutane.

10 . The etching gas composition of claim 9 , wherein the at least two C 3 or C 4 organic fluorine compounds comprise a third organic fluorine compound and a fourth organic fluorine compound,
the third organic fluorine compound is (2Z)-1,1,1,4,4,4-hexafluoro-2-butene, and the fourth organic fluorine compound is selected from among hexafluoroisobutene and (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane.

11 . The etching gas composition of claim 9 , wherein the at least two C 3 or C 4 organic fluorine compounds comprise a third organic fluorine compound and a fourth organic fluorine compound,
the third organic fluorine compound is hexafluoroisobutene, and the fourth organic fluorine compound is (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane.

12 . The etching gas composition of claim 1 , further comprising an inert gas and a reactive gas,
wherein the inert gas is selected from among argon (Ar), helium (He), neon (Ne), and any mixture thereof.

13 . The etching gas composition of claim 12 , wherein the reactive gas is oxygen gas (02).

14 . A substrate processing apparatus comprising:
a chamber having a processing space in which substrate processing is performed; a gas supply device configured to supply an etching gas composition to the processing space; and a substrate support device disposed in the processing space and configured to support a substrate, wherein the etching gas composition comprises at least two C 3 or C 4 organic fluorine compounds and tantalum fluoride, and the at least two C 3 or C 4 organic fluorine compounds are isomers.

15 . The substrate processing apparatus of claim 14 , further comprising a shower head disposed above the substrate and having a plurality of gas supply holes.

16 . A pattern forming method comprising:
forming a layer to be etched on a substrate; forming an etching mask on the layer to be etched; etching the layer to be etched through the etching mask by using plasma obtained from an etching gas composition; and removing the etching mask, wherein the etching gas composition comprises at least two C 3 or C 4 organic fluorine compounds and tantalum fluoride, and the at least two C 3 or C 4 organic fluorine compounds are isomers.

17 . The pattern forming method of claim 16 , wherein the etching mask is at least one selected from among a photoresist (PR), a spin-on hardmask (SOH), and an amorphous carbon layer (ACL).

18 . The pattern forming method of claim 16 , wherein the layer to be etched comprises at least one of silicon nitride or silicon oxide.

19 . The pattern forming method of claim 16 , wherein a plasma source for obtaining the plasma is one of an inductively coupled plasma (ICP) or a capacitively coupled plasma (CCP).

20 . The pattern forming method of claim 16 , wherein the tantalum fluoride has a formula of TaF 5 and is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.

Assignees

• Semes Co Ltd

Inventors

• MIN Kyungseok
• Moon Youngjoo
• Jang Minhyung

Classifications

• H10P50/283 Primary

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• C09K13/00 Primary

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• H01L21/31116

  Electricity · mapped topic