Polycrystalline semiconductor resistor

Patent metadata

Field	Value
Publication number	US-2023395646-A1
Application number	US-202217805696-A
Country	US
Kind code	A1
Filing date	Jun 7, 2022
Priority date	Jun 7, 2022
Publication date	Dec 7, 2023
Grant date	—

Abstract

In one embodiment, a semiconductor die includes a polycrystalline semiconductor resistor structure (poly resistor structure). The poly resistor structure includes a resistive path between a first terminal and a second terminal. The poly resistor structure includes a first region having a net first conductivity type dopant concentration located in the resistance path and a second region having a net second conductivity type dopant concentration located in the resistance path. A silicide structure is located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region. In some embodiments, poly resistor structures with different conductivity type regions can be connected together.

First claim

What is claimed is:

1 . A semiconductor die comprising:
a polycrystalline semiconductor resistor structure including a resistance path between a first terminal and a second terminal, the polycrystalline semiconductor resistor structure comprising:
a first region having a net first conductivity type dopant concentration located in the resistance path;
a second region having a net second conductivity type dopant concentration located in the resistance path, the second conductivity type is opposite the first conductivity type;
a silicide structure located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region; wherein the first region includes a second portion that is not silicided and the second region includes a second portion that is not silicided.

2 . The semiconductor die of claim 1 wherein the second portion of the first region has a silicide blocking material located on it and the second portion of the second region has a silicide blocking material located on it.

3 . The semiconductor die of claim 1 wherein the silicide structure does not have a contact structure in electrical contact with it.

4 . The semiconductor die of claim 1 wherein the first region and the second region abut each other.

5 . The semiconductor die of claim 1 wherein the first region and the second region are located in series with each other in the resistance path.

6 . The semiconductor die of claim 1 wherein the first region and the second region are located in parallel with each other in the resistance path.

7 . The semiconductor die of claim 1 wherein the silicide structure is located at the first terminal of the polycrystalline resistive structure.

8 . The semiconductor die of claim 1 wherein the silicide structure has a contact structure in electrical contact with the silicide structure.

9 . The semiconductor die of claim 1 wherein the polycrystalline semiconductor resistor structure includes a third region having a net first conductivity type dopant concentration located in the resistance path.

10 . The semiconductor die of claim 9 wherein the first region, the second, and the third region are located in series with each other in the resistance path.

11 . The semiconductor die of claim 9 wherein the first region, the second region, and the third region are located in parallel in the resistance path.

12 . The semiconductor die of claim 9 wherein the second region and the third region are electrically connected to each other by a silicide structure located on a portion of the second region and a portion of the third region.

13 . The semiconductor die of claim 12 wherein the silicide structure located on a portion of the second region and a portion of the third region does not have a contact structure in electrical contact with it.

14 . The semiconductor die of claim 12 wherein the silicide structure located on a portion of the second region and a portion of the third region is the silicide structure located on both a first portion of the first region and a first portion of the second region.

15 . The semiconductor die of claim 1 further comprising:
a second polycrystalline semiconductor resistor structure including a resistance path of between a first terminal and a second terminal of the second polycrystalline semiconductor resistor structure;
wherein the polycrystalline semiconductor resistor structure includes a portion having an elongated form extending in a first lateral direction;
wherein the second polycrystalline semiconductor resistor structure includes a portion having an elongated form extending in the first lateral direction and is located in a parallel orientation with the polycrystalline semiconductor resistor structure;
wherein the first terminal of the polycrystalline semiconductor resistor structure is electrically coupled to the second terminal of the second polycrystalline semiconductor resistor structure.

16 . The semiconductor die of claim 15 further comprising:
a first polycrystalline structure having at least a first elongated portion in a first lateral substrate direction;
a second polycrystalline structure having at least a second elongated portion in a second lateral substate direction, wherein the first lateral substrate direction is laterally offset by 90 degrees from the second lateral substrate direction;
wherein the first lateral direction is laterally offset from the first lateral substrate direction by an angle in a range of 10 to 80 degrees and is laterally offset from the second lateral substrate direction by an angle in a range of 10 to 80 degrees.

17 . The semiconductor die of claim 15 further comprising:
a silicide blocking material structure extending over a portion of the polycrystalline semiconductor resistor structure and a portion of the second polycrystalline semiconductor resistor structure.

18 . A semiconductor die comprising:
a first polycrystalline semiconductor resistor structure including a resistance path between a first terminal and a second terminal, the first polycrystalline semiconductor resistor structure comprising:
a first region having a net first conductivity type dopant concentration located in the resistance path;
wherein the first polycrystalline semiconductor resistor structure includes a portion that includes the first region having an elongated form extending in a first lateral direction;
a second polycrystalline semiconductor resistor structure including a resistance path of between a first terminal and a second terminal of the second polycrystalline semiconductor resistor structure, the second polycrystalline semiconductor resistor structure comprising:
a second region having a net second conductivity type dopant concentration located in resistance path, the second conductivity type is opposite the first conductivity type;
wherein the second polycrystalline semiconductor resistor structure includes a portion that includes the second region having an elongated form extending in the first lateral direction;
a third poly crystalline structure having at least a first elongated portion in a first lateral substrate direction; a fourth polycrystalline structure having at least a second elongated portion in a second lateral substate direction, wherein the first lateral substrate direction is offset by 90 degrees from the second lateral substrate direction; wherein the first lateral direction is laterally offset from the first lateral substrate direction by an angle in a range of 10-80 degrees and is laterally offset from the second lateral substrate direction by an angle in a range of degrees.

19 . The semiconductor die of claim 18 wherein:
the first polycrystalline semiconductor resistor structure includes a second region having a net second conductivity type dopant concentration located in the resistance path;
the second polycrystalline semiconductor resistor structure includes a second region having a net first conductivity type dopant concentration located in the resistance path.

20 . A semiconductor die comprising:
a resistive element including one of more polycrystalline semiconductor resistor structures coupled together to provide a resistance path between a first terminal and a second terminal, the one or more polycrystalline semiconductor resistor structures comprising:
one or more regions each including an unsilicided portion having a net N type dopant

Assignees

• Nxp Usa Inc

Inventors

• Zhu Ronghua
• Claes Jan
• Cheng Xu
• Lin Xin
• He Jianhua
• Roggenbauer Todd
• Boyd James Gordon

Classifications

• H10W44/401

  Resistive arrangements (H10W44/20, H10W42/80 take precedence) · CPC title

• H10D1/43

  Resistors having PN junctions · CPC title

• H10D30/6743

  Silicon · CPC title

• H10D30/6737

  characterised by the electrode materials · CPC title

• H10D62/83

  being Group IV materials, e.g. B-doped Si or undoped Ge · CPC title