Inflexible voltage reference circuit card, and method for manufacturing an inflexible voltage reference circuit card
US-2024215166-A1 · Jun 27, 2024 · US
US2023380055A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023380055-A1 |
| Application number | US-202318307131-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 26, 2023 |
| Priority date | May 19, 2022 |
| Publication date | Nov 23, 2023 |
| Grant date | — |
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A wiring substrate includes a core substrate, a build-up part formed on a surface of the substrate and including insulating layers and conductor layers, and a covering insulating layer formed on the build-up part such that the covering layer is covering the outermost surface of the build-up part. The build-up part is formed such that the insulating layers include a first insulating layer forming the outermost one of the insulating layers, that the conductor layers include a first conductor layer formed on the first insulating layer and including a first conductor pad, and that a tensile strength of the first insulating layer is higher than a tensile strength of each insulating layer other than the first insulating layer in the first build-up part, and the covering layer is formed such that the covering layer has opening entirely exposing an upper surface and a side surface of the first conductor pad.
Opening claim text (preview).
1 . A wiring substrate, comprising: a core substrate; a build-up part formed on a surface of the core substrate and comprising a plurality of insulating layers and a plurality of conductor layers; and a covering insulating layer formed on the build-up part such that the covering insulating layer is covering an outermost surface of the build-up part, wherein the build-up part is formed such that the plurality of insulating layers includes a first insulating layer forming an outermost one of the insulating layers, that the plurality of conductor layers includes a first conductor layer formed on the first insulating layer and including a first conductor pad, and that a tensile strength of the first insulating layer is higher than a tensile strength of each of the insulating layers other than the first insulating layer in the build-up part, and the covering insulating layer is formed such that the covering insulating layer has an opening entirely exposing an upper surface and a side surface of the first conductor pad. 2 . The wiring substrate according to claim 1 , wherein the build-up part is formed such that the first conductor pad of the first conductor layer is not directly connected to another pad in the first conductor layer or a wiring in the first conductor layer. 3 . The wiring substrate according to claim 1 , wherein the build-up part is formed such that the tensile strength of the first insulating layer is 125 MPa or greater. 4 . The wiring substrate according to claim 1 , wherein the build-up part is formed such that the first insulating layer has a dielectric loss tangent of 0.013 or less at a frequency of 5.8 GHz. 5 . The wiring substrate according to claim 1 , further comprising: a second build-up part formed on a second surface of the core substrate on an opposite side with respect to the surface on which the build-up part is formed, wherein the second build-up part is formed such that the second build-up part includes a plurality of insulating layers and that a number of the insulating layers in the second build-up part is equal to a number of the insulating layers in the build-up part. 6 . The wiring substrate according to claim 5 , wherein the second build-up part is formed such that the first insulating layer in the build-up part and an outermost insulating layer in the second build-up part are formed of a same material. 7 . The wiring substrate according to claim 1 , wherein the build-up part is formed such that the plurality of conductor layers includes a second conductor layer formed on an opposite side with respect to the first conductor layer via the first insulating layer and that the build-up part includes a via conductor penetrating through the first insulating layer and connecting the second conductor layer and the first conductor pad of the first conductor layer. 8 . The wiring substrate according to claim 2 , wherein the build-up part is formed such that the tensile strength of the first insulating layer is 125 MPa or greater. 9 . The wiring substrate according to claim 2 , wherein the build-up part is formed such that the first insulating layer has a dielectric loss tangent of 0.013 or less at a frequency of 5.8 GHz. 10 . The wiring substrate according to claim 2 , further comprising: a second build-up part formed on a second surface of the core substrate on an opposite side with respect to the surface on which the build-up part is formed, wherein the second build-up part is formed such that the second build-up part includes a plurality of insulating layers and that a number of the insulating layers in the second build-up part is equal to a number of the insulating layers in the build-up part. 11 . The wiring substrate according to claim 10 , wherein the second build-up part is formed such that the first insulating layer in the build-up part and an outermost insulating layer in the second build-up part are formed of a same material. 12 . The wiring substrate according to claim 2 , wherein the build-up part is formed such that the plurality of conductor layers includes a second conductor layer formed on an opposite side with respect to the first conductor layer via the first insulating layer and that the build-up part includes a via conductor penetrating through the first insulating layer and connecting the second conductor layer and the first conductor pad of the first conductor layer. 13 . The wiring substrate according to claim 3 , wherein the build-up part is formed such that the first insulating layer has a dielectric loss tangent of 0.013 or less at a frequency of 5.8 GHz. 14 . The wiring substrate according to claim 3 , further comprising: a second build-up part formed on a second surface of the core substrate on an opposite side with respect to the surface on which the build-up part is formed, wherein the second build-up part is formed such that the second build-up part includes a plurality of insulating layers and that a number of the insulating layers in the second build-up part is equal to a number of the insulating layers in the build-up part. 15 . The wiring substrate according to claim 14 , wherein the second build-up part is formed such that the first insulating layer in the build-up part and an outermost insulating layer in the second build-up part are formed of a same material. 16 . The wiring substrate according to claim 3 , wherein the build-up part is formed such that the plurality of conductor layers includes a second conductor layer formed on an opposite side with respect to the first conductor layer via the first insulating layer and that the build-up part includes a via conductor penetrating through the first insulating layer and connecting the second conductor layer and the first conductor pad of the first conductor layer. 17 . The wiring substrate according to claim 4 , further comprising: a second build-up part formed on a second surface of the core substrate on an opposite side with respect to the surface on which the build-up part is formed, wherein the second build-up part is formed such that the second build-up part includes a plurality of insulating layers and that a number of the insulating layers in the second build-up part is equal to a number of the insulating layers in the build-up part. 18 . The wiring substrate according to claim 17 , wherein the second build-up part is formed such that the first insulating layer in the build-up part and an outermost insulating layer in the second build-up part are formed of a same material. 19 . The wiring substrate according to claim 4 , wherein the build-up part is formed such that the plurality of conductor layers includes a second conductor layer formed on an opposite side with respect to the first conductor layer via the first insulating layer and that the build-up part includes a via conductor penetrating through the first insulating layer and connecting the second conductor layer and the first conductor pad of the first conductor layer. 20 . The wiring substrate according to claim 5 , wherein the build-up part is formed such that the plurality of conductor layers includes a second conductor layer formed on an opposite side with respect to the first conductor layer via the first insulating layer and that the build-up part includes a via conductor penetrating through the first insulating layer and connecting the second conductor layer and the first conductor pad of the first conductor layer.
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