Fast and flexible ram reader and writer

US2023376229A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2023376229-A1
Application numberUS-202217663847-A
CountryUS
Kind codeA1
Filing dateMay 18, 2022
Priority dateMay 18, 2022
Publication dateNov 23, 2023
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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A circuit for reading or writing a RAM includes a shift register coupled to the RAM, a test data input, and a test data output. The circuit further includes a control circuit configured to generate a pulse every N clock cycles, each pulse triggering a RAM access operation transferring data between the shift register and the RAM, N being equal to a data width of the RAM divided by a parallel factor, the parallel factor being a number of pins in either the test data input or the test data output configured for parallel data loading.

First claim

Opening claim text (preview).

What is claimed is: 1 . A circuit for reading or writing a random access memory (RAM), the circuit comprising: a shift register coupled to the RAM, a test data input, and a test data output; and a control circuit configured to generate a pulse every N clock cycles, each pulse triggering a RAM access operation transferring data between the shift register and the RAM, N being equal to a data width of the RAM divided by a parallel factor, the parallel factor being a number of pins in either the test data input or the test data output configured for parallel data loading. 2 . The circuit of claim 1 , wherein the control circuit is configured to generate each pulse in accordance with a counter repeating every N clock cycles. 3 . The circuit of claim 2 , further coupled to a test controller running a finite state machine in accordance with an IEEE 1149.1 standard. 4 . The circuit of claim 3 , wherein the counter is configured to activate and count in accordance with the finite state machine. 5 . The circuit of claim 3 , further comprising an update register, wherein the RAM access operation includes a data transfer between the shift register and the update register and a data transfer between the update register and the RAM. 6 . The circuit of claim 3 , wherein the test data input is a serial test data input pin and the test data output is a serial test data output pin, and wherein the parallel factor is 1. 7 . The circuit of claim 3 , wherein the test data input includes a serial test data input pin and at least one parallel data loading pin, wherein the test data output includes a serial test data output pin and the at least one parallel data loading pin, each of the at least one parallel data loading pin coupled to a section of the shift register via a multiplexer (MUX), and wherein the parallel factor is a number of the at least one parallel data loading pin+1. 8 . The circuit of claim 1 , wherein the test data input includes at least one parallel data loading pin coupled to a peripheral device, and wherein the parallel factor is a number of the at least one parallel data loading pin. 9 . A method to write a random access memory (RAM), the method comprising: loading, by a RAM access circuit coupled to the RAM, data from a test data input into a shift register of the RAM access circuit; and generating, by the RAM access circuit, a pulse every N clock cycles, each pulse triggering a RAM write operation transferring the data loaded into the shift register to the RAM, N being equal to a data width of the RAM divided by a parallel factor, the parallel factor being a number of pins in the test data input configured for parallel data loading. 10 . The method of claim 9 , wherein the RAM access circuit is configured to generate each pulse in accordance with a counter repeating every N clock cycles. 11 . The method of claim 10 , wherein the RAM access circuit is coupled to a test controller running a finite state machine in accordance with an IEEE 1149.1 standard. 12 . The method of claim 11 , wherein the counter is configured to activate and count in accordance with the finite state machine. 13 . The method of claim 11 , wherein the RAM access circuit includes an update register, and wherein the RAM write operation includes transferring the data from the shift register to the update register and subsequently transferring the data from the update register to the RAM. 14 . The method of claim 11 , wherein the test data input is a serial test data input pin, and wherein the parallel factor is 1. 15 . The method of claim 11 , wherein the test data input includes a serial test data input pin and at least one parallel data loading pin, each of the at least one parallel data loading pin coupled to a section of the shift register via a multiplexer (MUX), and wherein the parallel factor is a number of the at least one parallel data loading pin+1. 16 . The method of claim 9 , wherein the test data input includes at least one parallel data loading pin coupled to a peripheral device, and wherein the parallel factor is a number of the at least one parallel data loading pin. 17 . A method to read a random access memory (RAM), the method comprising: generating, by a RAM access circuit coupled to the RAM and a test data output, a pulse every N clock cycles, each pulse triggering a RAM read operation loading data from the RAM into a shift register of the RAM access circuit, N being equal to a data width of the RAM divided by a parallel factor, the parallel factor being a number of pins in the test data output configured for parallel data loading; and transferring, by the RAM access circuit, the data loaded into the shift register to the test data output. 18 . The method of claim 17 , wherein the RAM access circuit includes an update register, and wherein the RAM read operation includes transferring the data from the RAM to the update register and subsequently transferring the data from the update register to the shift register. 19 . The method of claim 17 , wherein the test data output includes a serial test data output pin and at least one parallel data loading pin, each of the at least one parallel data loading pin coupled to a section of the shift register via a multiplexer (MUX), and wherein the parallel factor is a number of the at least one parallel data loading pin+1. 20 . The method of claim 17 , wherein the RAM access circuit is configured to generate each pulse in accordance with a counter repeating every N clock cycles. 21 . A device comprising: a random access memory (RAM); a processor; and a RAM access circuit comprising: a shift register coupled to the RAM, a test data input, and a test data output; and a control circuit configured to generate a pulse every N clock cycles, each pulse triggering a RAM access operation transferring data between the shift register and the RAM, N being equal to a data width of the RAM divided by a parallel factor, the parallel factor being a number of pins in either the test data input or the test data output configured for parallel data loading.

Assignees

Inventors

Classifications

  • G06F3/0655Primary

    Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices · CPC title

  • specifically adapted to achieve a particular effect · CPC title

  • In-line storage system · CPC title

  • G11C29/48Primary

    Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths · CPC title

  • Implementation of control logic, e.g. test mode decoders · CPC title

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What does patent US2023376229A1 cover?
A circuit for reading or writing a RAM includes a shift register coupled to the RAM, a test data input, and a test data output. The circuit further includes a control circuit configured to generate a pulse every N clock cycles, each pulse triggering a RAM access operation transferring data between the shift register and the RAM, N being equal to a data width of the RAM divided by a parallel fac…
Who is the assignee on this patent?
St Microelectronics Srl
What technology area does this patent fall under?
Primary CPC classification G06F3/0655. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Nov 23 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).