3-dimensional resonant structure based infrared selective emitter capable of broadband and increased emission

Patent metadata

Field	Value
Publication number	US-2023314677-A1
Application number	US-202318295914-A
Country	US
Kind code	A1
Filing date	Apr 5, 2023
Priority date	Apr 5, 2022
Publication date	Oct 5, 2023
Grant date	—

Abstract

Proposed is a 3-dimensional resonant structure-based infrared selective emitter capable of maximizing the infrared selective radiation function by broadening the emissivity in the non-detection bands with resonance phenomena between multiple resonator units at the same time as securing infrared camouflage and energy dissipation-resultant surface thermal stability by reducing the emissivity significantly in the infrared detection band and selectively dissipating energy to the non-detection bands.

First claim

1 . A infrared selective emitter comprising:
a flat portion formed by stacking a metal layer and a dielectric layer; and a pattern portion including a plurality of resonance structures, wherein each of the plurality of resonance structures is formed by staking metal and dielectric layers alternately for the topmost and bottommost layers to be the metal layers and includes at least two types that are different from each other in at least one of shape and cross-section perpendicular to a stacking direction and are arranged in a predetermined pattern.

2 . The infrared selective emitter of claim 1 , further comprising at least two resonator units formed by continuously stacking a metal layer, a dielectric layer, and a metal layer from the metal layer of the flat portion to the topmost layer of the resonant structures.

3 . The infrared selective emitter of claim 1 , wherein the plurality of the resonant structures comprises two types of resonant structures different in size of a cross-section perpendicular to the stacking direction, and the two types of resonant structures are arranged alternately in a mutually perpendicular x-axis and y-axis direction of the flat portion.

4 . The infrared selective emitter of claim 1 , wherein each of the plurality of resonant structures has a cross-section decreasing in size as going up to the topmost layer in a height direction.

5 . The infrared selective emitter of claim 1 , wherein an end face shape parallel to the stacking direction of each layer constituting each of the plurality of resonant structures is a trapezoidal shape.

6 . The infrared selective emitter of claim 1 , wherein the plurality of resonant structures have a diameter of 0.1 to 10 μm and are arranged to have a spacing of 0.1 to 10 μm on the flat portion.

7 . The infrared selective emitter of claim 1 , wherein the metal layers of the plurality of resonant structures have a thickness of 10 to 500 nm and the dielectric layers of the plurality of resonant structures have a thickness of 10 to 1000 nm.

8 . The infrared selective emitter of claim 1 , having a heat dissipation ratio of 45 to 70% that is calculated by Equation 1:

Heat
⁢

dissipation
⁢

ratio
⁢

(
%
)

=

E
s

(
T
)

@
5

-

8
⁢

μ
⁢
m

E
BB

(
T
)

@
5

-

8
⁢

μ
⁢

m

where E is radiant energy, T is temperature, subscript s is selective emitter, and BB is black body.

9 . The infrared selective emitter of claim 1 , having a maximum emissivity of 0.8 or higher in the infrared wavelength band of 5 to 8 μm.

10 . The infrared selective emitter of claim 1 , wherein the metal layer is one of Au, Ag, Cu, or Pt, and the dielectric layer is one of MgF2, ZnS, AlN, Al2O3, SiO2, or Si3N4.

11 . A method of manufacturing an infrared selective emitter, the method comprising:
stacking a metal layer and a dielectric layer alternately on a substrate to have the topmost and bottommost layers being the metal layers; forming a mask pattern layer on the topmost metal layer; and forming a flat portion by stacking a metal layer and a dielectric layer, and forming a pattern portion including resonant structures on the dielectric layer of the flat portion by etching the alternately stacked metal and dielectric layers in a predetermined pattern.

12 . The method of claim 11 , wherein the etching comprises isotropic etching.

Assignees

• Univ Yonsei Iacf

Inventors

• Cho Hyung Hee
• Lee Nam Kyu
• Lim Joon-Soo
• Chang In Joong
• Nam Ju Yeong
• Bae Hyung Mo
• Kim Ji Hyeok

Classifications

• H10F77/00

  Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• G02B5/281 Primary

  designed for the infrared light · CPC title

• G02B1/002 Primary

  made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title