Light-emitting device and electronic apparatus including light-emitting device

Patent metadata

Field	Value
Publication number	US-2023284522-A1
Application number	US-202318178902-A
Country	US
Kind code	A1
Filing date	Mar 6, 2023
Priority date	Mar 7, 2022
Publication date	Sep 7, 2023
Grant date	—

Abstract

A light-emitting device, including: a substrate; a cathode disposed on the substrate; an anode facing the cathode; and an interlayer including an emission layer, wherein the interlayer is located between the cathode and the anode, and wherein the light-emitting device further includes a photoacid generator.

First claim

What is claimed is:

1 . A light-emitting device, comprising:
a substrate; a cathode disposed on the substrate; an anode facing the cathode; and an interlayer comprising an emission layer, wherein the interlayer is located between the cathode and the anode, and wherein the light-emitting device further comprises a photoacid generator.

2 . The light-emitting device of claim 1 , wherein
the interlayer further comprises an electron transport region located between the cathode and the emission layer, and a hole transport region located between the emission layer and the anode, the electron transport region comprises a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or a combination thereof and the hole transport region comprises a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or a combination thereof.

3 . The light-emitting device of claim 2 , wherein
the cathode comprises the photoacid generator, the electron transport region comprises the photoacid generator, the emission layer comprises the photoacid generator, the hole transport region comprises the photoacid generator, the anode comprises the photoacid generator, or a combination thereof, the light-emitting device further comprises a photoacid generating layer comprising the photoacid generator, or a combination thereof.

4 . The light-emitting device of claim 3 , wherein the electron transport region comprises the photoacid generator.

5 . The light-emitting device of claim 3 , wherein the photoacid generating layer is:
located between the cathode and the electron transport region; located between the electron transport region and the emission layer; located between the emission layer and the hole transport region; located between the hole transport region and the anode; or a combination thereof.

6 . The light-emitting device of claim 2 , wherein
the electron transport region comprises the electron transport layer, and the electron transport layer comprises a metal oxide.

7 . The light-emitting device of claim 6 , wherein
the electron transport layer comprises the photoacid generator, the electron transport region further comprises a photoacid generating layer, wherein the photoacid generating layer is in direct contact with the electron transport layer, or a combination thereof.

8 . The light-emitting device of claim 6 , wherein the metal oxide comprises a compound represented by Formula 1:
M x O y   Formula 1

wherein, in Formula 1,
M is at least one metal or metalloid from one of Groups 1 to 14 of the IUPAC Periodic Table of Elements, and
x and y are each independently an integer from 1 to 5.

9 . The light-emitting device of claim 7 , wherein M comprises Zn, Ti, W, Sn, In, Nb, Fe, Ce, Sr, Ba, In, Al, Nb, Si, Mg, Ga, or a combination thereof.

10 . The light-emitting device of claim 6 , wherein the metal oxide comprises a compound represented by Formula 2:
M1 α M2 β O y   Formula 2

wherein, in Formula 2,
M1 is a metal or metalloid from one of Groups 1 to 14 of the IUPAC Periodic Table of Elements,
M2 is a metal or metalloid from one of Groups 1 to 14 of the IUPAC Periodic Table of Elements,
M1 and M2 are different, and
0<α≤2, 0<β≤2, and 1<y≤5.

11 . The light-emitting device of claim 10 , wherein
M1 comprises Zn, Ti, W, Sn, In, Nb, Fe, Ce, Sr, Ba, In, Al, Nb, or a combination thereof, and M2 comprises Ti, Sn, Si, Mg, Al, Ga, In, or a combination thereof.

12 . The light-emitting device of claim 6 , wherein the metal oxide comprises a zinc-containing oxide.

13 . The light-emitting device of claim 1 , wherein the photoacid generator comprises a compound comprising an onium ion, a compound comprising a halogen, a compound comprising a nitrobenzyl, a compound comprising a sulfonic acid ester, a compound comprising a diazomethane, a compound comprising an oxime, or a combination thereof.

14 . The light-emitting device of claim 1 , wherein the photoacid generator comprises a compound comprising a sulfonium ion, a compound comprising an iodonium ion, a compound comprising a halogen, a compound comprising an oxime, or a combination thereof, wherein the compound comprising the halogen-is a halogen triazine compound.

15 . The light-emitting device of claim 1 , wherein the photoacid generator comprises at least one of Compounds PAG1 to PAG8:

16 . The light-emitting device of claim 1 , wherein the emission layer comprises one or more quantum dots.

17 . A method of manufacturing a light-emitting device, the method comprising:
forming a cathode on a substrate; forming an electron transport region on the cathode, wherein the electron transport region comprises a photoacid generator; forming an emission layer on the electron transport region; and forming an anode on the emission layer.

18 . An electronic apparatus, comprising the light-emitting device of claim 1 .

19 . The electronic apparatus of claim 18 , wherein
the substrate comprises a plurality of sub-pixel areas, and a pixel-defining film is located between the plurality of sub-pixel areas, wherein the pixel-defining film comprises the photoacid generator, a photoacid generating layer comprising the photoacid generator is located on the pixel-defining film, or a combination thereof.

20 . The electronic apparatus of claim 19 , further comprising a color filter, a color-conversion layer, a touchscreen layer, a polarizing layer, or a combination thereof.

Assignees

• Samsung Display Co Ltd

Inventors

• Lee Juyon
• Kang Jingoo
• Kim Sehun
• Kim Yonghwi
• Kim Jonghoon
• Park Myoungjin
• Park Junwoo
• Yu Sanghee
• Ha Jaekook

Classifications

• H10K50/165

  comprising dopants · CPC title

• H10K85/611 Primary

  Charge transfer complexes · CPC title

• H10K50/115 Primary

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• H10K50/16

  Electron transporting layers · CPC title

• H10K50/15

  Hole transporting layers · CPC title