Display device
US-2024324289-A1 · Sep 26, 2024 · US
US2023269962A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023269962-A1 |
| Application number | US-202118020513-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 2, 2021 |
| Priority date | Sep 2, 2020 |
| Publication date | Aug 24, 2023 |
| Grant date | — |
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A buffer film and an organic light emitting device (OLED) including the same are disclosed herein. In some embodiments, a buffer film comprises a porous metal sheet having average reflectance of 50% or less for light in a wavelength range of 400 to 800 nm. The buffer film can exhibit heat dissipation properties, electromagnetic wave shielding properties and impact resistance (or impact mitigation properties) required for an OLED. The buffer film is capable of securing the characteristics required for an OLED without price increase, process complexity, and thickness increase of the OLED.
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1 . A buffer film, comprising: a porous metal sheet, wherein the porous metal sheet has an average reflectance of 50% or less with respect to light having wavelength ranging from 400 nm to 800 nm. 2 . The buffer film according to claim 1 , wherein the porous metal sheet has a specific resistance of 1.0×10 −5 Ωcm or more. 3 . The buffer film according to claim 1 , wherein the porous metal sheet has a thermal diffusivity of 25 mm 2 /s or more. 4 . The buffer film according to claim 1 , wherein the porous metal sheet has a first major surface and a second major surface having a different surface roughness than the first major surface, and wherein a ratio of a surface roughness (1Sa) of the first major surface relative to a surface roughness (2Sa) of the second major surface is more than 1 and to 3 or less. 5 . The buffer film according to claim 4 , wherein the 1Sa is 6.5 μm or more. 6 . The buffer film according to claim 1 , wherein the porous metal sheet has a thickness of 50 μm or more. 7 . The buffer film according to claim 1 , wherein the porous metal sheet comprises a first metal having a Young's modulus of 160 GPa or less and a second metal having a Young's modulus of more than 160 GPa. 8 . The buffer film according to claim 1 , wherein the porous metal sheet comprises a first metal having specific resistance of 4.3×10 −6 Ωcm or less and a second metal having specific resistance of more than 4.3×10 −6 Ωcm. 9 . The buffer film according to claim 1 , wherein the porous metal sheet comprises a first metal and a second metal different from the first metal, and wherein the first and second metals each have a Poisson ratio in a range of 0.1 to 0.7. 10 . The buffer film according to claim 1 , wherein the porous metal sheet is a metal foam, a metal fiber sintered sheet or a metal mesh. 11 . The buffer film according to claim 1 , further comprising: a sticking layer on one or both sides of the porous metal sheet. 12 . The buffer film according to claim 11 , wherein the porous metal sheet has a first major surface and a second major surface having a different surface roughness than the first major surface, wherein a surface roughness of the first major surface is larger than a surface roughness of the second major surface, and wherein the sticking layer is formed on the first major surface. 13 . An organic light emitting device, comprising: a substrate; an organic light emitting layer formed on the an upper portion of the substrate; and the buffer film of claim 1 formed on a lower portion of the substrate. 14 . The organic light emitting device according to claim 13 , wherein the porous metal sheet has a first major surface and a second major surface having a different surface roughness than the first major surface, wherein a surface roughness of the first major surface is larger than a surface roughness of the second major surface, and wherein the first major surface is disposed closer to the organic light emitting layer than the second major surface. 15 . The organic light emitting device according to claim 13 , further comprising: an electronic element formed on the lower portion of the buffer film, wherein only the buffer film is present between the electronic element and the substrate.
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