Thin film and method for producing same, circularly polarized light detection element, device and method

Patent metadata

Field	Value
Publication number	US-2023231069-A1
Application number	US-202117998203-A
Country	US
Kind code	A1
Filing date	May 25, 2021
Priority date	May 28, 2020
Publication date	Jul 20, 2023
Grant date	—

Abstract

This thin film is a thin film for detecting circularly polarized light, and includes a plurality of inorganic layers constituting a layered structure and/or a plurality of inorganic chains constituting a chain structure, which are formed of a perovskite type substance, and chiral molecules incorporated in at least a part of a boundary part between the adjacent inorganic layers and/or between the inorganic chains, wherein the chiral molecules include only one of S-form chiral molecules and R-form chiral molecules or chiral molecules with a higher abundance proportion of one of S-form chiral molecules and R-form chiral molecules than an abundance proportion of the other of S-form chiral molecules and R-form chiral molecules, and wherein the crystal structure of the perovskite type substance is oriented in a predetermined direction.

First claim

1 . A thin film for detecting a circularly polarized light, comprising:
a plurality of inorganic layers constituting a layered structure and/or a plurality of inorganic chains constituting a chain structure, which are formed of a perovskite type substance; and chiral molecules incorporated in at least a part of a boundary part between the adjacent inorganic layers and/or between the inorganic chains, wherein the chiral molecules include only one of S-form chiral molecules and R-form chiral molecules, or
chiral molecules with a higher abundance proportion of one of S-form chiral molecules and R-form chiral molecules than an abundance proportion of the other of the S-form chiral molecules and R-form chiral molecules, and
wherein the crystal structure of the perovskite type substance is oriented in a predetermined direction.

2 . The thin film according to claim 1 ,
wherein an absorption intensity per unit thickness is 50,000 cm −1 or more and 500,000 cm −1 or less.

3 . The thin film according to claim 1 ,
wherein a surface roughness Ra is 1 nm or more and 30 nm or less.

4 . The thin film according to claim 1 ,
wherein the chiral molecules form an organic layer at the boundary part, and the inorganic layer and the organic layer are alternately laminated and/or the chiral molecules surround the inorganic chains.

5 . The thin film according to claim 1 ,
wherein the chiral molecules are fixed to the inorganic layer and/or the inorganic chain.

6 . The thin film according to claim 1 ,
wherein the chiral molecules are bonded to the inorganic layer and/or the inorganic chain via a functional group covalently bonded to asymmetric carbon atoms constituting the chiral molecules.

7 . The thin film according to claim 6 ,
wherein the functional group is a substituent that is able to have a charge, and the substituent and the perovskite type substance form a bond via a halogen ion, which fixes the chiral molecule to the inorganic layer and/or the inorganic chain.

8 . The thin film according to claim 1 ,
wherein the perovskite type substance and the chiral molecules constitute a compound A 2 BX 4 and/or ABX 3 composed of three types of ions A, B, and X, and wherein the thin film includes a structure in which the ion B and the ion X form a plurality of units having an octahedron structure, and the octahedron structures of the adjacent units share one vertex and/or plane.

9 . The thin film according to claim 8 , comprising
a plurality of inorganic layers constituting a layered structure, wherein the perovskite type substance and the chiral molecules constitute a compound A 2 BX 4 composed of three types of ions A, B, and X, and wherein the thin film includes a structure in which the ion B and the ion X form a plurality of units having an octahedron structure, and the octahedron structures of the adjacent units share one vertex.

10 . The thin film according to claim 8 , comprising
a plurality of inorganic chains constituting a chain structure, wherein the perovskite type substance and the chiral molecules constitute a compound ABX 3 composed of three types of ions A, B, and X, and wherein the thin film includes a structure in which the ion B and the ion X form a plurality of units having an octahedron structure, and the octahedron structures of the adjacent units share one plane.

11 . The thin film according to claim 8 ,
wherein the ion A is an aromatic compound containing an ethylammonium ion, the ion B is a lead ion or a tin ion, and the ion X is a halogen ion.

12 . A method for producing the thin film according to claim 1 , comprising:
a first step in which a precursor of the perovskite type substance which is a raw material of the thin film, the chiral molecules, and an organic halide that is able to be sublimated by heating and reacts with some of elements constituting the perovskite type substance are dissolved in a solvent; a second step in which a solution obtained in the first step is applied onto a substrate using a spin coating method to form an untreated coating film on the substrate; and a third step in which the untreated coating film is heated to sublimate the organic halide contained in the untreated coating film.

13 . The method for producing a thin film according to claim 12 ,
wherein the precursor of the perovskite type substance is a lead halide, and wherein the organic halide is methylammonium halide or formamidinium halide.

14 . The method for producing a thin film according to claim 13 ,
wherein a halogen atom contained in the lead halide and the organic halide is any of a bromine atom, a chlorine atom, and an iodine atom.

15 . A circularly polarized light detection element comprising the thin film according to claim 1 .

16 . The circularly polarized light detection element according to claim 15 ,
wherein a negative electrode layer, the thin film, and a positive electrode layer are laminated in that order, and at least one of the negative electrode layer and the positive electrode layer has light transmitting properties.

17 . A device into which the circularly polarized light detection element according to claim 15 is incorporated.

18 . A method for inducing an R- or S-arranged chiral structure for a perovskite structure of a perovskite type substance including a plurality of inorganic layers constituting a layered structure and/or a plurality of inorganic chains constituting a chain structure, the method comprising
a step in which only one of S-form chiral molecules and R-form chiral molecules or chiral molecules with a higher abundance proportion of one of S-form chiral molecules and R-form chiral molecules than an abundance proportion of the other of S-form chiral molecules and R-form chiral molecules are incorporated in at least a part of a boundary part between the adjacent inorganic layers and/or between the inorganic chains contained in the perovskite type substance so that the crystal structure of the perovskite type substance is oriented in a predetermined direction.

19 . A thin film formed of a perovskite type substance and imparted with chirality,
wherein the thin film includes a plurality of inorganic layers constituting a layered structure and/or a plurality of inorganic chains constituting a chain structure, and only one of S-form chiral molecules and R-form chiral molecules, or
chiral molecules with a higher abundance proportion of one of S-form chiral molecules and R-form chiral molecules than an abundance proportion of the other of S-form chiral molecules and R-form chiral molecules which are incorporated in at least a part of a boundary part between the adjacent inorganic layers and/or between the inorganic chains, and
wherein the crystal structure of the perovskite type substance is oriented in a predetermined direction.

Assignees

• Japan Science & Tech Agency

Inventors

• Nihei Ayumi
• Miyasaka Tsutomu

Classifications

• H10F30/21

  the devices being sensitive to infrared, visible or ultraviolet radiation · CPC title

• H10F77/12

  Active materials · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F30/00 Primary

  Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors · CPC title

• H01L31/08 Primary

  Electricity · mapped topic