Thin film deposition method and method of fabricating electronic device using the same

Patent metadata

Field	Value
Publication number	US-2023227972-A1
Application number	US-202318155549-A
Country	US
Kind code	A1
Filing date	Jan 17, 2023
Priority date	Jan 19, 2022
Publication date	Jul 20, 2023
Grant date	—

Abstract

A thin film deposition method and a method of fabricating an electronic device using the same are disclosed. The thin film deposition method may include preparing a substrate structure having a pattern portion including a hole, adsorbing a reaction inhibitor to inside and outside of the hole in the substrate structure, wherein an adsorption density of the reaction inhibitor may be lower in the inside than the outside, and depositing a metal layer on the inside and outside the hole by an atomic layer deposition (ALD) process, wherein a deposition rate of the depositing may vary depending on regions by the reaction inhibitor, and wherein the reaction inhibitor may include a metal atom and a ligand for reaction inhibition bonded to the metal atom, and the metal atom may remain on the substrate structure in the depositing the metal layer.

First claim

What is claimed is:

1 . A thin film deposition method, comprising:
preparing a substrate structure including a hole; adsorbing a reaction inhibitor to inside and outside of the hole in the substrate structure, wherein an adsorption density of the reaction inhibitor is lower in the inside of the hole than in the outside of the hole; and depositing a metal layer on the inside and the outside of the hole by performing an atomic layer deposition (ALD) process, wherein a deposition rate of the metal layer varies depending on portions of the hole to which the reaction inhibitor is adsorbed, wherein the reaction inhibitor includes a metal atom and a ligand for reaction inhibition, the ligand being bonded to the metal atom, and the metal atom remains on the substrate structure in the depositing of the metal layer.

2 . The thin film deposition method of claim 1 , wherein the metal atom of the reaction inhibitor is the same as a metal atom of the metal layer.

3 . The thin film deposition method of claim 1 , wherein the adsorption density of the reaction inhibitor decreases from an inlet portion of the hole toward a bottom portion of the hole.

4 . The thin film deposition method of claim 1 , wherein the reaction inhibitor includes any one of C 10 H 12 M and C 9 H 8 O 3 M, M representing a metal atom.

5 . The thin film deposition method of claim 4 , wherein the C 10 H 12 M is C 10 H 12 W or C 10 H 12 Ti.

6 . The thin film deposition method of claim 4 , wherein the C 9 H 8 O 3 M is C 9 H 8 O 3 W or C 9 H 8 O 3 Ti.

7 . The thin film deposition method of claim 1 , wherein the reaction inhibitor is a first reaction inhibitor, and the thin film deposition method further comprises adsorbing a second reaction inhibitor to the substrate structure one or more times while depositing the metal layer.

8 . The thin film deposition method of claim 7 , wherein the second reaction inhibitor includes the same material as the first reaction inhibitor.

9 . The thin film deposition method of claim 1 , wherein the reaction inhibitor is a first reaction inhibitor, and
the depositing of the metal layer includes depositing a first metal layer on the inside and the outside of the hole and depositing a second metal layer on the first metal layer, and wherein the thin film deposition method further comprises adsorbing a second reaction inhibitor onto the first metal layer between the depositing the first metal layer and the depositing the second metal layer.

10 . The thin film deposition method of claim 1 , wherein the depositing of the metal layer includes:
supplying a precursor gas including a metal precursor into a chamber in which the substrate structure is provided; purging the chamber; supplying a reactant gas into the chamber; and purging the chamber.

11 . The thin film deposition method of claim 1 , wherein the hole has a vertical hole structure extending in a direction perpendicular to a top surface of a substrate.

12 . The thin film deposition method of claim 1 , wherein the hole has a horizontal hole structure extending in a first direction parallel to a top surface of a substrate.

13 . The thin film deposition method of claim 12 , wherein the hole includes an opening region, a plurality of first holes, and a plurality of second holes,
wherein the opening region extends in a second direction perpendicular to the top surface of the substrate, wherein the plurality of first holes extend in the first direction along a first side surface of the opening region and are formed to be spaced apart from each other in the second direction, wherein the plurality of second holes extend in the first direction along a second side surface of the opening region that faces the first side surface, and are formed to be spaced apart from each other in the second direction, and wherein the metal layer is deposited in the plurality of first holes and the plurality of second holes.

14 . A method of fabricating an electronic device by using the thin film deposition method according to claim 1 .

15 . The method of claim 14 , wherein the electronic device is a three-dimensional V-NAND device.

16 . A reaction inhibitor which is adsorbed to a given region of a substrate in an atomic layer deposition (ALD) process to inhibit a reaction for thin film deposition, the reaction inhibitor comprising a metal atom and a ligand for reaction inhibition, the ligand being bonded to the metal atom.

17 . The reaction inhibitor of claim 16 , wherein the reaction inhibitor includes any one of C 10 H 12 M and C 9 H 8 O 3 M, M being a metal atom.

18 . The reaction inhibitor of claim 17 , wherein M is tungsten (W) or titanium (Ti).

19 . The reaction inhibitor of claim 16 , wherein a thin film formed by the ALD process is a metal layer, and the metal atom of the reaction inhibitor is the same as a metal atom of the metal layer.

Assignees

• Sk Hynix Inc
• Univ Nat Incheon Res & Business Found

Inventors

• Lee Do Han
• Kim Eun Soo
• Ryu Seung Wook
• Lim Tae Hwan
• Lee Han-Bo-Ram
• Ansari Abu Saad Aqueel Ahmed
• Trinh Ngoc Le

Classifications

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• C23C16/45534 Primary

  Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title

• H10B41/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title