Micro light emitting diode

Patent metadata

Field	Value
Publication number	US-2023223498-A1
Application number	US-202318185388-A
Country	US
Kind code	A1
Filing date	Mar 17, 2023
Priority date	May 21, 2020
Publication date	Jul 13, 2023
Grant date	—

Abstract

A micro light emitting diode includes an epitaxial structure, a first electrode, a second electrode, at least one via and an insulating layer. The epitaxial structure has a surface and includes a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer. The first electrode and the second electrode are respectively disposed on the surface of the epitaxial structure. The second electrode is located outside around the first electrode and symmetrically disposed with respect to a geometric center of a bonding surface of the epitaxial structure. The via extends from the second-type semiconductor layer to the first-type semiconductor layer. The insulating layer is disposed on the second-type semiconductor layer together with the first electrode. The insulating layer extends to cover an inner wall of the via, and the via is non-symmetrically disposed with respect to the geometric center of the bonding surface of the epitaxial structure.

First claim

What is claimed is:

1 . A micro light emitting diode, comprising:
an epitaxial structure, having a surface and comprising a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer, wherein the light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer; a first electrode, disposed on the surface of the epitaxial structure; a second electrode, disposed on the surface of the epitaxial structure, wherein the second electrode is located outside around the first electrode, and the second electrode is symmetrically disposed with respect to a geometric center of a bonding surface of the epitaxial structure; and at least one via, extending from the second-type semiconductor layer to the first-type semiconductor layer; and an insulating layer, disposed on the second-type semiconductor layer together with the first electrode, wherein the insulating layer extends to cover an inner wall of the at least one via, and the at least one via is non-symmetrically disposed with respect to the geometric center of the bonding surface of the epitaxial structure.

2 . The micro light emitting diode according to claim 1 , wherein a minimum gap is provided between the second electrode and the first electrode on the bonding surface, and the minimum gap is greater than or equal to 0.5 microns and is smaller than or equal to 10 microns.

3 . The micro light emitting diode according to claim 1 , wherein an interval distance is provided between the second electrode on the bonding surface and a surrounding surface of the epitaxial structure, and the interval distance is smaller than or equal to 5 microns and is greater than or equal to 0.5 microns.

4 . The micro light emitting diode according to claim 1 , wherein the first electrode and the second electrode are not coplanar.

5 . The micro light emitting diode according to claim 4 , wherein a first surface of the first electrode is higher than a second surface of the second electrode.

6 . The micro light emitting diode according to claim 5 , wherein a Young's modulus of the first electrode is smaller than a Young's modulus of the second electrode.

7 . The micro light emitting diode according to claim 4 , wherein a first surface of the first electrode is lower than a second surface of the second electrode.

8 . The micro light emitting diode according to claim 7 , wherein a Young's modulus of the first electrode is greater than a Young's modulus of the second electrode.

9 . The micro light emitting diode according to claim 1 , wherein the second electrode has a first electrical property and a second electrical property, the first electrical property is different from the second electrical property, and the second electrical property is identical to an electrical property of the first electrode.

10 . The micro light emitting diode according to claim 1 , wherein a ratio of an orthographic projection area of the at least one via on the second electrode to an area of the second electrode is less than or equal to 0.5.

11 . The micro light emitting diode according to claim 1 , wherein an outer surface of the second electrode relatively away from the epitaxial structure is located on the same horizontal plane.

Assignees

• Playnitride Display Co Ltd

Inventors

• Shih Yi-Chun
• Chen Pei-Hsin
• Chen Yi-Ching

Classifications

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/8312 Primary

  extending at least partially through the bodies · CPC title

• H01L33/382 Primary

  Electricity · mapped topic