Semiconductor structure

Patent metadata

Field	Value
Publication number	US-2023215925-A1
Application number	US-202217970608-A
Country	US
Kind code	A1
Filing date	Oct 21, 2022
Priority date	Jan 3, 2022
Publication date	Jul 6, 2023
Grant date	—

Abstract

A semiconductor structure, including a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer, is provided. The first nitride layer is located on the substrate. The polarity inversion layer is located on a surface of the first nitride layer to convert a non-metallic polarity surface of the first nitride layer into a metallic polarity surface of the polarity inversion layer. The second nitride layer is located on the polarity inversion layer. The third nitride layer is located on the second nitride layer. The substrate, the first nitride layer, the polarity inversion layer, and the second nitride layer include iron element.

First claim

What is claimed is:

1 . A semiconductor structure, comprising:
a substrate; a first nitride layer, located on the substrate; a polarity inversion layer, located on a surface of the first nitride layer to convert a non-metallic polarity surface of the first nitride layer into a metallic polarity surface of the polarity inversion layer; a second nitride layer, located on the polarity inversion layer; and a third nitride layer, located on the second nitride layer, wherein the substrate, the first nitride layer, the polarity inversion layer, and the second nitride layer comprise iron element.

2 . The semiconductor structure according to claim 1 , wherein the third nitride layer comprises iron element.

3 . The semiconductor structure according to claim 1 , wherein the substrate comprises:
a lower base and an upper base between the lower base and the first nitride layer, wherein a thickness of the upper base is 25 μm to 200 μm.

4 . The semiconductor structure according to claim 3 , wherein an oxygen concentration in the upper base is lower than an oxygen concentration in the lower base.

5 . The semiconductor structure according to claim 3 , wherein a resistivity of the upper base is higher than a resistivity of the lower base.

6 . The semiconductor structure according to claim 3 , wherein an iron concentration in the upper base is higher than an iron concentration in the lower base.

7 . The semiconductor structure according to claim 3 , wherein in the upper base, an aluminum concentration within a depth of 2 μm below an interface between the upper base and the first nitride layer is less than 1E17 #/cm 3 .

8 . The semiconductor structure according to claim 3 , wherein in the upper base, an iron concentration within a depth of 2 μm below an interface between the upper base and the first nitride layer is greater than 1E14 #/cm 3 .

9 . The semiconductor structure according to claim 1 , wherein the first nitride layer comprises aluminum silicon nitride comprising iron element, and an iron concentration in the first nitride layer is greater than 5E16 #/cm 3 .

10 . The semiconductor structure according to claim 1 , wherein the polarity inversion layer comprises a metal layer comprising iron element, and an iron concentration in the polarity inversion layer is greater than 5E17 #/cm 3 .

11 . The semiconductor structure according to claim 1 , wherein the second nitride layer comprises aluminum nitride comprising iron element, and an iron concentration in the second nitride layer is greater than 5E17 #/cm 3 .

12 . The semiconductor structure according to claim 1 , wherein the second nitride layer comprises a low temperature nitrogen aluminum nitride layer and a high temperature nitrogen aluminum nitride layer located on the low temperature nitrogen aluminum nitride layer, wherein a temperature difference between a growth temperature of the high temperature aluminum nitride layer and a growth temperature of the low temperature aluminum nitride layer is greater than about 50° C.

13 . The semiconductor structure according to claim 12 , wherein the low temperature aluminum nitride layer comprises iron element, and the high temperature aluminum nitride layer does not comprise iron element.

14 . The semiconductor structure according to claim 1 , wherein a carrier concentration within a surface of the substrate is below 1E15 #/cm 3 .

15 . A semiconductor structure, comprising:
a substrate; a first nitride layer, located on the substrate, wherein the substrate comprises a lower base and an upper base between the lower base and the first nitride layer, wherein in the upper base, an aluminum concentration within a depth of 2 μm below an interface between the upper base and the first nitride layer is less than 1E17 #/cm 3 , and an iron concentration within a depth of 2 μm below the interface between the upper base and the first nitride layer is greater than 1E14 #/cm 3 ; a metal layer, located on a surface of the first nitride layer to convert a non-metallic polarity surface of the first nitride layer into a metallic polarity surface of the metal layer; a second nitride layer, located on the metal layer; and a third nitride layer, located on the second nitride layer, wherein the substrate, the first nitride layer, the metal layer, and the second nitride layer comprise iron element.

Assignees

• Globalwafers Co Ltd

Inventors

• Lin Po Jung
• Shih Ying-Ru
• Tsao Chenghan

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3241

  being conductive materials · CPC title