Catalysts and methods for polyester production
US-2015368394-A1 · Dec 24, 2015 · US
Nitride Semiconductor Photocatalytic Thin Film and Method for Manufacturing Nitride Semiconductor Photocatalytic Thin Film
US2023201810A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023201810-A1 |
| Application number | US-202017923513-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 25, 2020 |
| Priority date | May 25, 2020 |
| Publication date | Jun 29, 2023 |
| Grant date | — |
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Abstract
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The nitride semiconductor photocatalytic thin film of the present embodiment is a nitride semiconductor photocatalytic thin film that exhibits a catalytic function to cause a redox reaction by light irradiation. The nitride semiconductor photocatalytic thin film includes: a conductive substrate; a semiconductor thin film disposed on a surface of the conductive substrate; a first catalyst layer that forms an ohmic junction on a portion of a surface of the semiconductor thin film; a second catalyst layer that forms a Schottky junction on a portion of the surface of the semiconductor thin film, and a protective layer disposed to cover a back surface of the conductive substrate and side surfaces of the conductive substrate and the semiconductor thin film. The substrate and the semiconductor thin film include a same element and have a same crystal structure.
First claim
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1 . A nitride semiconductor photocatalytic thin film that exhibits a catalytic function to cause a redox reaction by light irradiation, the nitride semiconductor photocatalytic thin film comprising: a conductive substrate; a semiconductor thin film placed on a surface of the conductive substrate; a first catalyst layer configured to form an ohmic junction on a portion of a surface of the semiconductor thin film; a second catalyst layer configured to form a Schottky junction on a portion of the surface of the semiconductor thin film, and a protective layer placed to cover a back surface of the conductive substrate and a plurality of side surfaces of the conductive substrate and the semiconductor thin film, wherein the conductive substrate and the semiconductor thin film include a same element and have a same crystal structure. 2 . The nitride semiconductor photocatalytic thin film according to claim 1 , wherein the conductive substrate is an n-type semiconductor. 3 . A nitride semiconductor photocatalytic thin film that exhibits a catalytic function to cause a redox reaction by light irradiation, the nitride semiconductor photocatalytic thin film comprising: an insulative substrate; an n-type semiconductor thin film placed on a surface of the insulative substrate; a semiconductor thin film placed on a surface of the n-type semiconductor thin film; a first catalyst layer configured to form an ohmic junction on a portion of a surface of the semiconductor thin film; a second catalyst layer configured to form a Schottky junction on a portion of the surface of the semiconductor thin film, and a protective layer disposed to cover a back surface of the insulative substrate and a plurality of side surfaces of the insulative substrate and the semiconductor thin film, wherein the insulative substrate, the n-type semiconductor thin film, and the semiconductor thin film include a same element and have a same crystal structure. 4 . A method for producing a nitride semiconductor photocatalytic thin film that exhibits a catalytic function to cause a redox reaction by light irradiation, the method comprising: forming a semiconductor thin film on a surface of a conductive substrate; forming a first catalyst layer on a portion of a surface of the semiconductor thin film; performing heat treatment to form an ohmic junction between the semiconductor thin film and the first catalyst layer; forming a second catalyst layer on a portion of the surface of the semiconductor thin film; performing heat treatment on the second catalyst layer; and forming a protective layer to cover a back surface of the conductive substrate and a plurality of side surfaces of the conductive substrate and the semiconductor thin film, wherein the conductive substrate and the semiconductor thin film include a same element and have a same crystal structure. 5 . The method for producing a nitride semiconductor photocatalytic thin film according to claim 4 , wherein a metal organic chemical vapor deposition method is used in the forming of the semiconductor thin film. 6 . (canceled) 7 . (canceled)
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X-ray diffraction · CPC title
characterised by their physical properties · CPC title
Scanning electron microscopy; Transmission electron microscopy · CPC title
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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- What does patent US2023201810A1 cover?
- The nitride semiconductor photocatalytic thin film of the present embodiment is a nitride semiconductor photocatalytic thin film that exhibits a catalytic function to cause a redox reaction by light irradiation. The nitride semiconductor photocatalytic thin film includes: a conductive substrate; a semiconductor thin film disposed on a surface of the conductive substrate; a first catalyst layer …
- Who is the assignee on this patent?
- Nippon Telegraph & Telephone
- What technology area does this patent fall under?
- Primary CPC classification B01J27/24. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Thu Jun 29 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).