Organic photodetector and electronic apparatus including the same

Patent metadata

Field	Value
Publication number	US-2023200097-A1
Application number	US-202218082815-A
Country	US
Kind code	A1
Filing date	Dec 16, 2022
Priority date	Dec 17, 2021
Publication date	Jun 22, 2023
Grant date	—

Abstract

Provided are an organic photodetector and an electronic apparatus including the same. The organic photodetector includes a first electrode, a second electrode facing the first electrode, an auxiliary layer arranged between the first electrode and the second electrode, and an activation layer arranged between the first electrode and the activation layer. The auxiliary layer includes a compound having a refractive index of about 2.2 or more.

First claim

What is claimed is:

1 . An organic photodetector comprising:
a first electrode; a second electrode facing the first electrode; an activation layer arranged between the first electrode and the second electrode; and an auxiliary layer arranged between the first electrode and the activation layer, wherein the auxiliary layer comprises a compound having a refractive index of about 2.2 or more.

2 . The organic photodetector of claim 1 , wherein
the activation layer comprises:
a p-type semiconductor layer; and
an n-type semiconductor layer,
the p-type semiconductor layer comprises a p-type semiconductor, the n-type semiconductor layer comprises a n-type semiconductor, and the p-type semiconductor layer and the n-type semiconductor layer form a PN junction.

3 . The organic photodetector of claim 1 , wherein
the activation layer comprises a p-type semiconductor and an n-type semiconductor, and the activation layer is a mixed layer in which the p-type semiconductor and the n-type semiconductor are mixed.

4 . The organic photodetector of claim 2 , wherein the p-type semiconductor comprises boron subphthalocyanine chloride (SubPc), copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), or a combination thereof.

5 . The organic photodetector of claim 2 , wherein the n-type semiconductor comprises C60 fullerene, C70 fullerene, or a combination thereof.

6 . The organic photodetector of claim 1 , wherein a thickness of the activation layer is in a range of about 20 nm and about 100 nm.

7 . The organic photodetector of claim 1 , wherein the activation layer directly contacts the auxiliary layer.

8 . The organic photodetector of claim 1 , wherein a thickness of the auxiliary layer is in a range of about 1 nm and about 20 nm.

9 . The organic photodetector of claim 1 , wherein the compound includes an organic material.

10 . The organic photodetector of claim 1 , wherein the compound includes an amine group-containing compound.

11 . The organic photodetector of claim 1 , wherein the refractive index is in a range of about 2.2 and about 3.0.

12 . The organic photodetector of claim 1 , further comprising:
a hole transport region between the first electrode and the auxiliary layer; and an electron transport region between the activation layer and the second electrode, wherein the hole transport region comprises a hole injection layer, a hole transport layer, an electron blocking layer, or a combination thereof, and the electron transport region comprises a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.

13 . The organic photodetector of claim 12 , wherein the hole transport region comprises the hole transport layer.

14 . The organic photodetector of claim 13 , wherein a thickness of the hole transport layer is in a range of about 80 nm and about 150 nm.

15 . The organic photodetector of claim 13 , wherein the hole transport layer directly contacts the auxiliary layer.

16 . The organic photodetector of claim 13 , wherein each of the activation layer and the hole transport layer directly contacts the auxiliary layer.

17 . An electronic apparatus comprising the organic photodetector of claim 1 .

18 . The electronic apparatus of claim 17 , further comprising a light-emitting device.

19 . An electronic apparatus comprising:
a substrate comprising a light detection region and an emission region; an organic photodetector arranged on the light detection region; and a light-emitting device arranged on the emission region, wherein the organic photodetector comprises:
a first pixel electrode;
a counter electrode facing the first pixel electrode; and
a first common layer, an auxiliary layer, an activation layer, and a second common layer, which are sequentially arranged between the first pixel electrode and the counter electrode, the light-emitting device comprises:
a second pixel electrode;
the counter electrode, facing the second pixel electrode; and
the first common layer, an emission layer, and the second common layer, which are sequentially arranged between the second pixel electrode and the counter electrode,
the first pixel electrode, the auxiliary layer, and the activation layer are arranged in correspondence with the light detection region, the second pixel electrode and the emission layer are arranged in correspondence with the emission region, and the first common layer, the second common layer, and the counter electrode are arranged throughout the light detection region and the emission region.

20 . The electronic apparatus of claim 19 , wherein the first common layer comprises a hole transport layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Choi Youngeun
• Seo Dongkyu
• Shin Junyong
• Yoon Seokgyu
• Lee Daeho
• Lee Byungseok
• Lee Jaeyong
• Jung Jinsoo
• Cho Kunwook
• Choi Minsoo

Classifications

• H10K39/501

  Integrated devices comprising a common active layer · CPC title

• H10K30/20

  comprising organic-organic junctions, e.g. donor-acceptor junctions · CPC title

• H10K85/6572

  comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole · CPC title

• H10K85/6574

  comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes · CPC title

• H10K50/15

  Hole transporting layers · CPC title