Terahertz wave-visible light conversion device and image sensing device including the same

Patent metadata

Field	Value
Publication number	US-2023163154-A1
Application number	US-202217990475-A
Country	US
Kind code	A1
Filing date	Nov 18, 2022
Priority date	Nov 19, 2021
Publication date	May 25, 2023
Grant date	—

Abstract

A light conversion device includes a substrate; a plurality of metal patterns provided on the substrate and separated from each other; a metal layer provided on the substrate and surrounding each of the plurality of metal patterns; a first slit positioned between the metal layer and each of the plurality of metal patterns and surrounding each of the plurality of metal patterns; and a light-emitting layer filling the first slit. The first slit and the metal pattern surrounded by the first slit are concentric. The metal layer and the plurality of metal patterns are aligned so that a first electric field enhancement occurs when a wave belonging to an invisible light band is incident to the first slit.

First claim

What is claimed is:

1 . A light conversion device comprising:
a substrate; a plurality of metal patterns provided on the substrate and separated from each other; a metal layer provided on the substrate and surrounding each of the plurality of metal patterns; a first slit positioned between the metal layer and each of the plurality of metal patterns and surrounding each of the plurality of metal patterns; and a light-emitting layer filling the first slit, wherein the first slit and the metal pattern surrounded by the first slit are concentric, and wherein the metal layer and the plurality of metal patterns are aligned so that a first electric field enhancement occurs when a wave belonging to an invisible light band is incident to the first slit.

2 . The light conversion device of claim 1 , wherein the light-emitting layer extends onto the metal layer and the plurality of metal patterns.

3 . The light conversion device of claim 1 , wherein the light-emitting layer comprises at least one of quantum dots or an organic light-emitting diode (OLED) material.

4 . The light conversion device of claim 1 , wherein the first slit defines a side surface substantially perpendicular or inclined with respect to the substrate.

5 . The light conversion device of claim 1 :
wherein each of the plurality of metal patterns (i) is arranged to form a second slit in which a second electric field enhancement occurs when a wave of an invisible light band is incident to the second slit, and (ii) includes a first metal portion and a second metal portion that are separated from each other, wherein the second metal portion completely surrounds the first metal portion, and wherein the second slit (i) is present between the first metal portion and the second metal portion, (ii) is filled with the light-emitting layer, and (iii) has a width configured to generate visible light from the light-emitting layer by the second electric field enhancement.

6 . The light conversion device of claim 5 , wherein the second slit defines a side surface substantially perpendicular or inclined with respect to the substrate.

7 . The light conversion device of claim 5 , wherein the light-emitting layer extends onto the first and second metal portions.

8 . The light conversion device of claim 1 , wherein each of the plurality of metal patterns (i) is arranged to form a second slit and a third slit in which a second electric field enhancement and a third electric field enhancement respectively occur when a wave of an invisible light band is incident to the second slit and the third slit respectively, and (ii) includes a first metal portion, a second metal portion, and a third metal portion separated from each other,
wherein the first metal portion, the second metal portion, and the third metal portion are concentric circles and are sequentially provided in a radial direction, wherein the second slit is positioned between the first metal portion and the second metal portion; wherein the third slit is positioned between the second metal portion and the third metal portion; and wherein the second slit and third slit (i) are filled with the light-emitting layer and (ii) each have a respective width configured to generate visible light from the light-emitting layer by the second electric field enhancement and the third electric field enhancement.

9 . The light conversion device of claim 8 , wherein each of the first slit, the second slit, and the third slit have a same width as each other.

10 . The light conversion device of claim 8 , wherein the first slit, the second slit, and the third slit respectively have a first width, a second width, and a third width, and
wherein at least two from among the first width, the second width and the third width are different from each other.

11 . The light conversion device of claim 8 , wherein the first slit, the second slit, and the third slit each define a side surface substantially perpendicular to or inclined to the substrate.

12 . The light conversion device of claim 8 , wherein the light-emitting layer completely fills each of the first slit, the second slit, and the third slit and extends onto the first metal portion, the second metal portion, and the third metal portion.

13 . A light conversion device comprising:
a substrate; a first metal layer formed on the substrate and including a plurality of first through holes separated from each other; a second metal layer provided in the plurality of first through holes and separated from the first metal layer; and a light-emitting layer filling a first gap between the first metal layer and the second metal layer, wherein the first gap has a first width configured to generate a first electric field enhancement according to a polarization state of a wave when the wave belonging to an invisible light band is incident.

14 . The light conversion device of claim 13 , wherein a side surface of the first metal layer and a side surface of the second metal layer each defined by the first gap are substantially perpendicular or inclined to the substrate.

15 . The light conversion device of claim 13 , wherein the light-emitting layer extends onto the first metal layer and the second metal layer.

16 . The light conversion device of claim 13 , wherein the second metal layer includes:
a second through hole through which the substrate is exposed; and a third metal layer formed on the substrate in the second through hole and separated from the second metal layer, wherein a second gap between the second metal layer and the third metal layer is filled with the light-emitting layer, and wherein the second gap has a second width configured to generate a second electric field enhancement according to a polarization state of the wave when the wave is incident.

17 . The light conversion device of claim 16 , wherein the light-emitting layer extends onto the first metal layer, the second metal layer and the third metal layer.

18 . The light conversion device of claim 16 , wherein the third metal layer includes:
a third through hole through which the substrate is exposed; and a fourth metal layer formed on the substrate in the third through hole and separated from the third metal layer, wherein a third gap between the third metal layer and fourth metal layer is filled with the light-emitting layer, and wherein the third gap has a third width configured to generate a third electric field enhancement according to a polarization state of the wave when the wave is incident.

19 . The light conversion device of claim 18 , wherein the light-emitting layer extends onto the first metal layer, the second metal layer and the fourth metal layer.

20 . An image sensing device comprising:
a light conversion device comprising:
a substrate;
a plurality of metal patterns provided on the substrate and separated from each other;
a metal layer provided on the substrate and surrounding each of the plurality of metal patterns;
a first slit positioned between the metal layer and each of the plurality of metal patterns and surrounding each of the plurality of metal patterns; and
a light-emitting layer filling the first slit,
wherein the first slit and the metal pattern surrounded by the first slit are concentric, and
wherein the metal layer and the plurality of metal patterns are aligned so that a first electric field enhancement occurs when a wave belonging to an invisible light band is incident to the first slit; and
an image sensor configured to

Assignees

• Samsung Electronics Co Ltd
• Massachusetts Inst Technology
• Univ Minnesota

Inventors

• Baik Chanwook
• Shi Jiaojian
• Nelson Keith A
• Oh Sanghyun
• Yoo Daehan
• Cho Kyungsang

Classifications

• H10F39/8027 Primary

  Geometry of the photosensitive area · CPC title

• H10F39/191 Primary

  Photoconductor image sensors · CPC title

• H01L27/14607

  Electricity · mapped topic

• H01L27/14665 Primary

  Electricity · mapped topic