Display device
US-2020212138-A1 · Jul 2, 2020 · US
US2023157125A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023157125-A1 |
| Application number | US-202217885856-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 11, 2022 |
| Priority date | Nov 18, 2021 |
| Publication date | May 18, 2023 |
| Grant date | — |
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A light receiving element includes a first electrode, a hole transport region disposed on the first electrode, a light receiving layer disposed on the hole transport region and converting incident light to an electrical signal, an electron transport region disposed on the light receiving layer, and a second electrode disposed on the electron transport region. The light receiving layer includes a p-dopant compound, a donor compound, and an acceptor compound.
Opening claim text (preview).
What is claimed is: 1 . A light receiving element comprising: a first electrode; a hole transport region disposed on the first electrode; a light receiving layer disposed on the hole transport region and converting incident light to an electrical signal; an electron transport region disposed on the light receiving layer; and a second electrode disposed on the electron transport region, wherein the light receiving layer includes a p-dopant compound, a donor compound, and an acceptor compound. 2 . The light receiving element of claim 1 , wherein the light receiving layer comprises: a p-dopant layer including the p-dopant compound, and an active layer including the donor compound and the acceptor compound. 3 . The light receiving element of claim 2 , wherein the p-dopant layer is disposed more adjacent to the hole transport region than the active layer. 4 . The light receiving element of claim 2 , wherein the p-dopant layer further comprises the donor compound. 5 . The light receiving element of claim 2 , wherein the active layer is a single layer comprising the donor compound and the acceptor compound. 6 . The light receiving element of claim 2 , wherein the active layer comprises: a first layer disposed on the p-dopant layer and including the donor compound; and a second layer disposed on the first layer and including the acceptor compound. 7 . The light receiving element of claim 2 , wherein the active layer comprises: a first layer disposed on the p-dopant layer and including the donor compound; a second layer disposed on the first layer and including the donor compound and the acceptor compound; and a third layer disposed on the second layer and including the acceptor compound. 8 . The light receiving element of claim 1 , wherein the p-dopant compound comprises: a metal having a work function of about 5.0 eV or greater, or an organic compound having a HOMO level of about −5.0 eV or less. 9 . The light receiving element of claim 8 , wherein the p-dopant compound comprises at least one of a halogenated metal compound, a quinone derivative, a metal oxide, and a cyano group-containing compound. 10 . The light receiving element of claim 1 , wherein the acceptor compound comprises a fullerene derivative or a perylene tetracarboxylic diimide (PTCDI) derivative. 11 . The light receiving element of claim 1 , wherein the donor compound comprises a phthalocyanine-based compound or a perylene-based compound. 12 . The light receiving element of claim 1 , further comprising: a capping layer disposed on the second electrode, wherein the refractive index of the capping layer is about 1.6 or greater. 13 . The light receiving element of claim 1 , further comprising: a buffer layer disposed between the light receiving layer and the electron transport region. 14 . An electronic device comprising: a base layer; and a display element layer disposed on the base layer and including: a pixel definition film having an opening; and a light emitting element and a light receiving element divided by the pixel definition film, wherein each of the light emitting element and the light receiving element includes: a first electrode; a hole transport region disposed on the first electrode; an electron transport region disposed on the hole transport region; and a second electrode disposed on the electron transport region, the light emitting element includes a light emitting layer disposed between the hole transport region and the electron transport region, the light receiving element includes a light receiving layer disposed between the hole transport region and the electron transport region, the light receiving element converts incident light to an electrical signal, and the light receiving layer includes a p-dopant compound, a donor compound, and an acceptor compound. 15 . The electronic device of claim 14 , wherein the light receiving layer comprises: a p-dopant layer including the p-dopant compound; and an active layer including the donor compound and the acceptor compound. 16 . The electronic device of claim 15 , wherein the p-dopant layer further comprises the donor compound. 17 . The electronic device of claim 15 , wherein the active layer is a single layer comprising the donor compound and the acceptor compound. 18 . The electronic device of claim 15 , wherein the active layer comprises: a first layer disposed on the p-dopant layer and including the donor compound; and a second layer disposed on the first layer and including the acceptor compound. 19 . The electronic device of claim 15 , wherein the light emitting element does not comprise the p-dopant layer. 20 . An electronic device comprising: a display module divided into a red light emitting region, a green light emitting region, a blue light emitting region, and a light receiving region spaced apart from each other on a plane, wherein the display module includes: a base layer; a display element layer disposed on the base layer and including: a light emitting element; and a light receiving element; and an input sensing layer disposed on the display element layer, the display element layer includes: a first electrode; a hole transport region disposed on the first electrode; an electron transport region disposed on the hole transport region; and a second electrode disposed on the electron transport region, the light emitting element includes a light emitting layer disposed between the hole transport region and the electron transport region, and overlapping only the red light emitting region, the green light emitting region, and the blue light emitting region, the light receiving element includes a light receiving layer disposed between the hole transport region and the electron transport region, and overlapping only the light receiving region, and the light receiving layer includes a p-dopant compound, a donor compound, and an acceptor compound. 21 . The electronic device of claim 20 , wherein the light emitting element comprises: a red light emitting element corresponding to the red light emitting region; a blue light emitting element corresponding to the blue light emitting region; and a green light emitting element corresponding to the green light emitting region.
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