Apparatus and method for processing substrate

Patent metadata

Field	Value
Publication number	US-2023154730-A1
Application number	US-202217865395-A
Country	US
Kind code	A1
Filing date	Jul 15, 2022
Priority date	Nov 16, 2021
Publication date	May 18, 2023
Grant date	—

Abstract

A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber is provided. The substrate processing method comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

First claim

What is claimed is:

1 . A method for processing a substrate comprising:
providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

2 . The method of claim 1 , wherein the substrate is controlled to a first temperature while forming the first plasma,
wherein the substrate is controlled to a second temperature while forming the second plasma, wherein the substrate is controlled to a third temperature while providing the precursor.

3 . The method of claim 2 , wherein the first temperature and the second temperature are the same as each other.

4 . The method of claim 2 , wherein the third temperature is higher than the first temperature and the second temperature.

5 . The method of claim 2 , wherein the third temperature is 50° C. or more and 400° C. or less.

6 . The method of claim 1 , wherein the precursor comprises a diketone series gas.

7 . The method of claim 6 , wherein the precursor is at least one selected from a group comprising Hfac (Hexafluoroacetylacetone), Acac (Acetylacetone) and Dmac (Dimethylacetamide).

8 . The method of claim 1 , wherein the first gas is at least one selected from a group comprising Cl 2 , HCl, SiCl 4 , CCl 4 and BCl 3 .

9 . The method of claim 1 , wherein the second gas is at least one selected from a group comprising O 2 , H 2 O, N 2 O, and O 3 .

10 . The method of claim 1 , wherein forming the first plasma, forming the second plasma, and providing the precursor are performed in a dual process chamber capable of simultaneously performing plasma processing and heat processing.

11 . A method for processing a substrate comprising:
introducing a substrate having a semiconductor device formed thereon into a chamber, wherein the semiconductor device includes a first interlayer insulating film, a second interlayer insulating film formed on the first interlayer insulating film, a semiconductor pattern penetrating the first interlayer insulating film and the second interlayer insulating film, a charge trap film conformally formed along an upper surface of the first interlayer insulating film, a lower surface of the second interlayer insulating film, and a sidewall of the semiconductor pattern, a blocking film conformally formed along the charge trap film, and a conductive film formed to be in contact with the blocking film, wherein a portion of the blocking film is exposed by the conductive film, forming a first plasma in the chamber by using a first gas containing chlorine, forming a second plasma in the chamber by using a second gas containing oxygen, providing a precursor into the chamber to react the precursor with the blocking film exposed by the conductive film, and removing at least a portion of the blocking film exposed by the conductive film by repeating forming the first plasma, forming the second plasma, and providing the precursor.

12 . The method of claim 11 , wherein the blocking film comprises a metal oxide.

13 . The method of claim 11 , wherein the charge trap film comprises a nitride.

14 . The method of claim 11 , wherein the precursor comprises a diketone series gas.

15 . The method of claim 11 , wherein the substrate is controlled to a first temperature while forming the first plasma,
wherein the substrate is controlled to a second temperature while forming the second plasma, wherein the substrate is controlled to a third temperature while providing the precursor.

16 . The method of claim 15 , wherein the third temperature is 50° C. or more and 400° C. or less.

17 . An apparatus for processing a substrate comprising:
a heat source installed in a chamber and for heating a substrate; a gas supply system for supplying a first gas, a second gas and a precursor into the chamber; an electrode system for generating plasma using the first gas or the second gas supplied into the chamber; and a controller for controlling the heat source, the gas supply system and the electrode system to atomic layer etch a target layer of the substrate, wherein the atomic layer etching comprises, supplying a first gas containing chlorine into the chamber and forming a first plasma based on the first gas to first reform the target layer, supplying a second gas containing oxygen into the chamber and forming a second plasma based on the second gas to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

18 . The apparatus of claim 17 , wherein the precursor is supplied from a sidewall of the chamber, and the heat source is installed on an upper surface of the chamber.

19 . The apparatus of claim 17 , wherein the precursor is supplied from an upper surface of the chamber, and the heat source is installed on a sidewall of the chamber.

20 . The apparatus of claim 17 , wherein the precursor comprises a diketone series gas.

Assignees

• Semes Co Ltd

Inventors

• Jeon Young Eun
• Kim Yun Sang
• Jeon Min Sung
• Kim Ji Heon
• Jin Youngjo
• Hong Jin Hee
• Choi Sung Min
• Jang Dong Young

Classifications

• H10P50/285 Primary

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H01J37/32522 Primary

  Temperature · CPC title

• H01J37/3244 Primary

  Gas supply means · CPC title