Piezoelectric laminate, production method for piezoelectric laminate, and piezoelectric element

US2023142065A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2023142065-A1
Application numberUS-202117917055-A
CountryUS
Kind codeA1
Filing dateFeb 24, 2021
Priority dateApr 6, 2020
Publication dateMay 11, 2023
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film.

First claim

Opening claim text (preview).

1 . A piezoelectric stack comprising: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film. 2 . The piezoelectric stack according to claim 1 , wherein the ultrasonic output part and the ultrasonic input part are not in contact with each other. 3 . The piezoelectric stack according to claim 1 , wherein the output-side piezoelectric film, being a deposited film, contains any one of potassium sodium niobium oxide, lead-zirconium-titanium oxide, bismuth sodium titanium oxide, or bismuth ferrite. 4 . The piezoelectric stack according to claim 1 , wherein the input-side piezoelectric film, being a deposited film, contains aluminum nitride. 5 . A method of manufacturing a piezoelectric stack, comprising: depositing an output-side bottom electrode film and an input-side bottom electrode film on a substrate; depositing an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film,; depositing a protective film that protects the output-side piezoelectric film; depositing an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; exposing the output-side piezoelectric film by removing the protective film by etching; and depositing an output-side top electrode film on the output-side piezoelectric film and depositing an input-side top electrode film on the input-side piezoelectric film, thereby producing a stack in which an ultrasonic output part and an ultrasonic input part are placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film. 6 . The method of manufacturing a piezoelectric stack according to claim 5 , wherein the protective film is any one of a film containing silicon dioxide, a film containing lanthanum nickel oxide, or a film containing strontium ruthenium oxide. 7 . A piezoelectric element comprising: the piezoelectric stack according to claim 1 ; a voltage applicator connected between the output-side bottom electrode film and the output-side top electrode film; and a voltage detector connected between the input-side bottom electrode film and the input-side top electrode film, wherein the output-side piezoelectric film deforms under a voltage application from the voltage applicator applying a predetermined electric field between the output-side bottom electrode film and the output-side top electrode film, and ultrasonic waves generated due to a deformation of the output-side piezoelectric film are transmitted from the ultrasonic output part, and the ultrasonic input part receives the ultrasonic waves reflected by a test object, and a voltage generated between the input-side bottom electrode film and the input-side top electrode film due to a deformation of the input-side piezoelectric film is detected by the voltage detector. 8 . The piezoelectric stack according to claim 2 , wherein the output-side piezoelectric film, being a deposited film, contains any one of potassium sodium niobium oxide, lead-zirconium-titanium oxide, bismuth sodium titanium oxide, or bismuth ferrite. 9 . The piezoelectric stack according to claim 2 , wherein the input-side piezoelectric film, being a deposited film, contains aluminum nitride. 10 . The piezoelectric stack according to claim 3 , wherein the input-side piezoelectric film, being a deposited film, contains aluminum nitride. 11 . A piezoelectric element comprising: the piezoelectric stack according to claim 2 ; a voltage applicator connected between the output-side bottom electrode film and the output-side top electrode film; and a voltage detector connected between the input-side bottom electrode film and the input-side top electrode film, wherein the output-side piezoelectric film deforms under a voltage application from the voltage applicator applying a predetermined electric field between the output-side bottom electrode film and the output-side top electrode film, and ultrasonic waves generated due to a deformation of the output-side piezoelectric film are transmitted from the ultrasonic output part, and the ultrasonic input part receives the ultrasonic waves reflected by a test object, and a voltage generated between the input-side bottom electrode film and the input-side top electrode film due to a deformation of the input-side piezoelectric film is detected by the voltage detector. 12 . A piezoelectric element comprising: the piezoelectric stack according to claim 3 ; a voltage applicator connected between the output-side bottom electrode film and the output-side top electrode film; and a voltage detector connected between the input-side bottom electrode film and the input-side top electrode film, wherein the output-side piezoelectric film deforms under a voltage application from the voltage applicator applying a predetermined electric field between the output-side bottom electrode film and the output-side top electrode film, and ultrasonic waves generated due to a deformation of the output-side piezoelectric film are transmitted from the ultrasonic output part, and the ultrasonic input part receives the ultrasonic waves reflected by a test object, and a voltage generated between the input-side bottom electrode film and the input-side top electrode film due to a deformation of the input-side piezoelectric film is detected by the voltage detector. 13 . A piezoelectric element comprising: the piezoelectric stack according to claim 4 ; a voltage applicator connected between the output-side bottom electrode film and the output-side top electrode film; and a voltage detector connected between the input-side bottom electrode film and the input-side top electrode film, wherein the output-side piezoelectric film deforms under a voltage application from the voltage applicator applying a predetermined electric field between the output-side bottom electrode film and the output-side top electrode film, and ultrasonic waves generated due to a deformation of the output-side piezoelectric film are transmitted from the ultrasonic output part, and the ultrasonic input part receives the ultrasonic waves reflected by a test object, and a voltage generated between the input-side bottom electrode film and the input-side top electrode film due to a deformation of the input-side piezoelectric film is detected by the voltage detector.

Assignees

Inventors

Classifications

  • H10N39/00Primary

    Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00 · CPC title

  • Alkali metal based oxides, e.g. lithium, sodium or potassium niobates · CPC title

  • Mounts; Supports; Enclosures; Casings · CPC title

  • using piezoelectric devices · CPC title

  • Ceramic compositions · CPC title

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Frequently asked questions

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What does patent US2023142065A1 cover?
There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride fi…
Who is the assignee on this patent?
Sumitomo Chemical Co
What technology area does this patent fall under?
Primary CPC classification H10N39/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu May 11 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).