Twinned micromachined ultrasonic transducer
US-2024251683-A1 · Jul 25, 2024 · US
US2023142065A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023142065-A1 |
| Application number | US-202117917055-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 24, 2021 |
| Priority date | Apr 6, 2020 |
| Publication date | May 11, 2023 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film.
Opening claim text (preview).
1 . A piezoelectric stack comprising: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film. 2 . The piezoelectric stack according to claim 1 , wherein the ultrasonic output part and the ultrasonic input part are not in contact with each other. 3 . The piezoelectric stack according to claim 1 , wherein the output-side piezoelectric film, being a deposited film, contains any one of potassium sodium niobium oxide, lead-zirconium-titanium oxide, bismuth sodium titanium oxide, or bismuth ferrite. 4 . The piezoelectric stack according to claim 1 , wherein the input-side piezoelectric film, being a deposited film, contains aluminum nitride. 5 . A method of manufacturing a piezoelectric stack, comprising: depositing an output-side bottom electrode film and an input-side bottom electrode film on a substrate; depositing an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film,; depositing a protective film that protects the output-side piezoelectric film; depositing an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; exposing the output-side piezoelectric film by removing the protective film by etching; and depositing an output-side top electrode film on the output-side piezoelectric film and depositing an input-side top electrode film on the input-side piezoelectric film, thereby producing a stack in which an ultrasonic output part and an ultrasonic input part are placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film. 6 . The method of manufacturing a piezoelectric stack according to claim 5 , wherein the protective film is any one of a film containing silicon dioxide, a film containing lanthanum nickel oxide, or a film containing strontium ruthenium oxide. 7 . A piezoelectric element comprising: the piezoelectric stack according to claim 1 ; a voltage applicator connected between the output-side bottom electrode film and the output-side top electrode film; and a voltage detector connected between the input-side bottom electrode film and the input-side top electrode film, wherein the output-side piezoelectric film deforms under a voltage application from the voltage applicator applying a predetermined electric field between the output-side bottom electrode film and the output-side top electrode film, and ultrasonic waves generated due to a deformation of the output-side piezoelectric film are transmitted from the ultrasonic output part, and the ultrasonic input part receives the ultrasonic waves reflected by a test object, and a voltage generated between the input-side bottom electrode film and the input-side top electrode film due to a deformation of the input-side piezoelectric film is detected by the voltage detector. 8 . The piezoelectric stack according to claim 2 , wherein the output-side piezoelectric film, being a deposited film, contains any one of potassium sodium niobium oxide, lead-zirconium-titanium oxide, bismuth sodium titanium oxide, or bismuth ferrite. 9 . The piezoelectric stack according to claim 2 , wherein the input-side piezoelectric film, being a deposited film, contains aluminum nitride. 10 . The piezoelectric stack according to claim 3 , wherein the input-side piezoelectric film, being a deposited film, contains aluminum nitride. 11 . A piezoelectric element comprising: the piezoelectric stack according to claim 2 ; a voltage applicator connected between the output-side bottom electrode film and the output-side top electrode film; and a voltage detector connected between the input-side bottom electrode film and the input-side top electrode film, wherein the output-side piezoelectric film deforms under a voltage application from the voltage applicator applying a predetermined electric field between the output-side bottom electrode film and the output-side top electrode film, and ultrasonic waves generated due to a deformation of the output-side piezoelectric film are transmitted from the ultrasonic output part, and the ultrasonic input part receives the ultrasonic waves reflected by a test object, and a voltage generated between the input-side bottom electrode film and the input-side top electrode film due to a deformation of the input-side piezoelectric film is detected by the voltage detector. 12 . A piezoelectric element comprising: the piezoelectric stack according to claim 3 ; a voltage applicator connected between the output-side bottom electrode film and the output-side top electrode film; and a voltage detector connected between the input-side bottom electrode film and the input-side top electrode film, wherein the output-side piezoelectric film deforms under a voltage application from the voltage applicator applying a predetermined electric field between the output-side bottom electrode film and the output-side top electrode film, and ultrasonic waves generated due to a deformation of the output-side piezoelectric film are transmitted from the ultrasonic output part, and the ultrasonic input part receives the ultrasonic waves reflected by a test object, and a voltage generated between the input-side bottom electrode film and the input-side top electrode film due to a deformation of the input-side piezoelectric film is detected by the voltage detector. 13 . A piezoelectric element comprising: the piezoelectric stack according to claim 4 ; a voltage applicator connected between the output-side bottom electrode film and the output-side top electrode film; and a voltage detector connected between the input-side bottom electrode film and the input-side top electrode film, wherein the output-side piezoelectric film deforms under a voltage application from the voltage applicator applying a predetermined electric field between the output-side bottom electrode film and the output-side top electrode film, and ultrasonic waves generated due to a deformation of the output-side piezoelectric film are transmitted from the ultrasonic output part, and the ultrasonic input part receives the ultrasonic waves reflected by a test object, and a voltage generated between the input-side bottom electrode film and the input-side top electrode film due to a deformation of the input-side piezoelectric film is detected by the voltage detector.
Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00 · CPC title
Alkali metal based oxides, e.g. lithium, sodium or potassium niobates · CPC title
Mounts; Supports; Enclosures; Casings · CPC title
using piezoelectric devices · CPC title
Ceramic compositions · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.