Selective deposition using thermal and plasma-enhanced process

Patent metadata

Field	Value
Publication number	US-2023139917-A1
Application number	US-202218050128-A
Country	US
Kind code	A1
Filing date	Oct 27, 2022
Priority date	Oct 29, 2021
Publication date	May 4, 2023
Grant date	—

Abstract

Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.

First claim

1 . A method of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process, the method comprising
providing a substrate into a reaction chamber; performing a thermal deposition subcycle to selectively deposit a first material on the first surface; and performing a plasma deposition subcycle to selectively deposit a second material on the first surface, wherein at least one of the first material and the second material comprises silicon and oxygen.

2 . The method of claim 1 , wherein a metal or metalloid catalyst is provided into the reaction chamber in a vapor phase before performing the thermal deposition subcycle.

3 . The method of claim 1 , wherein at least one of the thermal deposition subcycle and the plasma deposition subcycle are performed more than once before performing another subcycle.

4 . The method of claim 1 , wherein the last subcycle of the deposition process is a plasma deposition subcycle.

5 . The method of claim 1 , wherein the first material is a material comprising silicon and oxygen.

6 . The method of claim 1 , wherein the thermal deposition subcycle comprises
providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase; and providing an oxygen precursor comprising oxygen and hydrogen into the reaction chamber in vapor phase to form first material comprising silicon and oxygen on the first surface.

7 . The method of claim 1 , wherein the second material is a material comprising silicon and oxygen.

8 . The method of claim 1 , wherein the plasma deposition subcycle comprises providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase; and
providing a plasma into the reaction chamber to form a reactive species for forming a second material comprising silicon and oxygen on the first surface.

9 . The method of claim 1 , wherein the first material and the second material are materials comprising silicon and oxygen.

10 . The method of claim 1 , wherein the first surface is a dielectric surface.

11 . The method of claim 10 , wherein the dielectric surface comprises silicon.

12 . The method of claim 1 , wherein the second surface comprises a passivation layer.

13 . The method of claim 12 , wherein the passivation layer comprises an organic polymer or a self-assembled monolayer (SAM).

14 . The method of claim 2 , wherein the catalyst is a metal halide, organometallic compound or metalorganic compound.

15 . The method of claim 14 , wherein the catalyst comprises trimethyl aluminum (TMA), dimethylaluminumchloride, aluminum trichloride (AlCl 3 ), dimethylaluminum isopropoxide (DMAI), tris(tertbutyl)aluminum (TTBA), tris(isopropoxide)aluminum (TIPA), tris(dimethylamino) aluminum (TDMAA) or triethyl aluminum (TEA).

16 . The method of claim 6 , wherein the alkoxy silane is selected from a group consisting of tetraacetoxysilane, tetramethoxysilane, tetraethoxysilane, trimethoxysilane, triethoxysilane and trimethoxy(3-methoxypropyl)silane.

17 . The method of claim 6 , wherein the oxygen precursor is water.

18 . The method of claim 1 , wherein a plasma used in the plasma deposition subcycle is generated from a noble gas.

19 . The method of claim 1 , wherein plasma ion energy of plasma used in the plasma deposition subcycle does not exceed 160 eV.

20 . The method of claim 1 , wherein at least two different pressures are used during a deposition cycle.

21 . The method of claim 2 , wherein a first pressure is used during providing the catalyst into the reaction chamber, and a second pressure is used during deposition subcycles.

22 . The method of claim 21 , wherein the first pressure is lower than the second pressure.

23 . The method of claim 1 , further comprising an activation treatment before the silicon-comprising material deposition, wherein the activation treatment comprises providing a catalyst into the reaction chamber in a vapor phase; and providing an oxygen precursor into the reaction chamber in a vapor phase.

24 . The method of claim 23 , wherein the catalyst and the oxygen precursor are provided into the reaction chamber cyclically.

Assignees

• Asm Ip Holding Bv

Inventors

• Tois Eva
• Madhiwala Viraj
• Chiappe Daniele
• Tuominen Marko
• Deng Shaoren
• Chandrasekaran Anirudhan
• Han Yongguy
• Givens Michael
• Illiberi Andrea
• Vandalon Vincent

Classifications

• H10P14/61

  using masks · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title