Small molecules and their use as organic semiconductors
US-2015108409-A1 · Apr 23, 2015 · US
US2023132149A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023132149-A1 |
| Application number | US-202217870628-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 21, 2022 |
| Priority date | Jul 21, 2021 |
| Publication date | Apr 27, 2023 |
| Grant date | — |
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Ultra-narrow bandgap Non Fullerene Acceptors (NFAs) comprising an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure were designed, synthesized, and characterized (where A, A′ are organic acceptor moieties and D and D′ are organic donor moieties). Exemplary NFA materials have narrow bandgap (0.86 eV-0.99 eV). Photovoltaic devices and Near Infrared photodetector devices based on these compositions above were synthesized with controlled amounts of solvents and additives. A photodetector having a specific detectivity of 2.41×10 12 Jones (D*) at a wavelength of 1040 nm was achieved.
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1 . A composition of matter useful as an electron acceptor, comprising: an organic semiconducting compound having an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure, wherein: D is a first donor moiety; D′ is a second electron donor moiety; A is a first electron acceptor moiety; and A′ is a second electron acceptor moiety. 2 . The composition of matter of claim 1 , wherein the organic semiconducting compound has the structure: Ar or Ar1 comprise an aromatic functional group or hydrogen, X is O, S, Se or N—R 1 ; Y is O, S, Se, or N—R 2 ; Z is C, Si, Ge, N or P; E is O, S, Se, or N—R 3 ; and each R, R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain. 3 . The composition of matter of claim 1 , wherein the organic semiconducting compound comprises the structure: wherein X is O, S, Se or N—R 1 , Y is O, S; Z is C, Si, Ge, N; E is O, S; each R R 1 , R 4 , R 5 and R 6 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy, chain; and each Ar1 and Ar2 is independently a substituted or non-substituted aromatic functional group comprising an electron withdrawing aromatic functional group. 4 . The composition of matter of claim 3 , wherein each Ar2 is independently one of the following: 5 . The composition of matter of claim 1 , having the A-D-A′-D′-A′-D-A structure wherein: A′ is: D′ is: Ar is one of the following: D is independently one of the following: where each R, R 2 , R 3 , R 4 , R 5 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain. 6 . The composition of matter of claim 1 , wherein the organic semiconducting compound has the structure: wherein each R is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain. 7 . The composition of matter of claim 1 , wherein the organic semiconducting compound has the structure: wherein each R 1 and R 2 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain. 8 . The composition of matter of claim 1 , wherein the organic semiconducting compound is: where each R 4 and R 7 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain; and each R 5 and R 6 , is independently hydrogen or a substituted or non-substituted alkyl or aryl chain. 9 . The composition of matter of claim 1 , further comprising an organic semiconducting donor combined with the electron acceptor. 10 . The composition of matter of claim 9 , wherein the organic semiconducting donor comprises: a semiconducting compound of the structure (and isomers thereof): wherein: each Ar 2 is independently a substituted or non-substituted aromatic functional group, or Ar 2 is nothing and the valence of the ring is completed with hydrogen; each Q is independently O, S Se, or N—R 4 ; each R and R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; T is N, C—F, or C—Cl; and X is C, Si, Ge, N or P, or the semiconducting compound of the structure: each Ar 2 is independently a substituted or non-substituted aromatic functional group, or Ar 2 is nothing and the valence of the ring is completed with hydrogen; each Q is independently O, S Se, or N—R 4 ; each R and R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; T is N, C—F, or C—Cl; and X is C, Si, Ge, N or P, or the semiconducting compound of the structure: wherein: Q is O, S, Se, N—R 4 , each R, R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; T is N, C—F, or C—Cl; and X is C, Si, Ge, N or P, or the organic semiconducting donor comprises the structure: wherein: each Ar 1 is independently a substituted or non-substituted aromatic functional group, or each Ar 1 is nothing and the valence of the ring is completed with hydrogen, each Z is independently O, S, Se, or N—R 4 ; each R 1 , R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; and each Q is independently O, S Se, or N—R 4 , or the organic semiconducting donor comprises the structure: each Ar 1 and Ar 2 is independently a substituted or non-substituted aromatic functional group, or each Ar 1 and Ar2 is independently nothing and the valence of the ring is completed with hydrogen, each Z is independently O, S, Se, or N—R 4 ; each R 1 , R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; and each Q is independently O, S Se, or N—R 4 . 11 . The composition of matter of claim 10 , wherein the electron acceptor has a bandgap less than or equal to the bandgap of the organic semiconducting donor. 12 . The composition of matter of claim 11 , wherein the organic semiconducting donor comprises a semiconducting polymer. 13 . The composition of matter of claim 9 , wherein the organic semiconducting donor comprises a semiconducting polymer having the structure: 14 . The composition of matter of claim 9 , wherein the organic semiconducting donor comprises:
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