Ultra narrow bandgap non-fullerene-acceptor based organic electronics

US2023132149A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2023132149-A1
Application numberUS-202217870628-A
CountryUS
Kind codeA1
Filing dateJul 21, 2022
Priority dateJul 21, 2021
Publication dateApr 27, 2023
Grant date

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  1. Title

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  5. First independent claim

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Abstract

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Ultra-narrow bandgap Non Fullerene Acceptors (NFAs) comprising an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure were designed, synthesized, and characterized (where A, A′ are organic acceptor moieties and D and D′ are organic donor moieties). Exemplary NFA materials have narrow bandgap (0.86 eV-0.99 eV). Photovoltaic devices and Near Infrared photodetector devices based on these compositions above were synthesized with controlled amounts of solvents and additives. A photodetector having a specific detectivity of 2.41×10 12 Jones (D*) at a wavelength of 1040 nm was achieved.

First claim

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1 . A composition of matter useful as an electron acceptor, comprising: an organic semiconducting compound having an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure, wherein: D is a first donor moiety; D′ is a second electron donor moiety; A is a first electron acceptor moiety; and A′ is a second electron acceptor moiety. 2 . The composition of matter of claim 1 , wherein the organic semiconducting compound has the structure: Ar or Ar1 comprise an aromatic functional group or hydrogen, X is O, S, Se or N—R 1 ; Y is O, S, Se, or N—R 2 ; Z is C, Si, Ge, N or P; E is O, S, Se, or N—R 3 ; and each R, R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain. 3 . The composition of matter of claim 1 , wherein the organic semiconducting compound comprises the structure: wherein X is O, S, Se or N—R 1 , Y is O, S; Z is C, Si, Ge, N; E is O, S; each R R 1 , R 4 , R 5 and R 6 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy, chain; and each Ar1 and Ar2 is independently a substituted or non-substituted aromatic functional group comprising an electron withdrawing aromatic functional group. 4 . The composition of matter of claim 3 , wherein each Ar2 is independently one of the following: 5 . The composition of matter of claim 1 , having the A-D-A′-D′-A′-D-A structure wherein: A′ is: D′ is: Ar is one of the following: D is independently one of the following: where each R, R 2 , R 3 , R 4 , R 5 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain. 6 . The composition of matter of claim 1 , wherein the organic semiconducting compound has the structure: wherein each R is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain. 7 . The composition of matter of claim 1 , wherein the organic semiconducting compound has the structure: wherein each R 1 and R 2 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain. 8 . The composition of matter of claim 1 , wherein the organic semiconducting compound is: where each R 4 and R 7 is independently hydrogen or a substituted or non-substituted alkyl, aryl or alkoxy chain; and each R 5 and R 6 , is independently hydrogen or a substituted or non-substituted alkyl or aryl chain. 9 . The composition of matter of claim 1 , further comprising an organic semiconducting donor combined with the electron acceptor. 10 . The composition of matter of claim 9 , wherein the organic semiconducting donor comprises: a semiconducting compound of the structure (and isomers thereof): wherein: each Ar 2 is independently a substituted or non-substituted aromatic functional group, or Ar 2 is nothing and the valence of the ring is completed with hydrogen; each Q is independently O, S Se, or N—R 4 ; each R and R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; T is N, C—F, or C—Cl; and X is C, Si, Ge, N or P, or the semiconducting compound of the structure: each Ar 2 is independently a substituted or non-substituted aromatic functional group, or Ar 2 is nothing and the valence of the ring is completed with hydrogen; each Q is independently O, S Se, or N—R 4 ; each R and R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; T is N, C—F, or C—Cl; and X is C, Si, Ge, N or P, or the semiconducting compound of the structure: wherein: Q is O, S, Se, N—R 4 , each R, R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; T is N, C—F, or C—Cl; and X is C, Si, Ge, N or P, or the organic semiconducting donor comprises the structure: wherein: each Ar 1 is independently a substituted or non-substituted aromatic functional group, or each Ar 1 is nothing and the valence of the ring is completed with hydrogen, each Z is independently O, S, Se, or N—R 4 ; each R 1 , R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; and each Q is independently O, S Se, or N—R 4 , or the organic semiconducting donor comprises the structure: each Ar 1 and Ar 2 is independently a substituted or non-substituted aromatic functional group, or each Ar 1 and Ar2 is independently nothing and the valence of the ring is completed with hydrogen, each Z is independently O, S, Se, or N—R 4 ; each R 1 , R 4 is independently hydrogen or a substituted or non-substituted alkyl, aryl, alkoxy or thioether chain; and each Q is independently O, S Se, or N—R 4 . 11 . The composition of matter of claim 10 , wherein the electron acceptor has a bandgap less than or equal to the bandgap of the organic semiconducting donor. 12 . The composition of matter of claim 11 , wherein the organic semiconducting donor comprises a semiconducting polymer. 13 . The composition of matter of claim 9 , wherein the organic semiconducting donor comprises a semiconducting polymer having the structure: 14 . The composition of matter of claim 9 , wherein the organic semiconducting donor comprises:

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Classifications

  • comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains · CPC title

  • comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene · CPC title

  • H10K85/657Primary

    Polycyclic condensed heteroaromatic hydrocarbons · CPC title

  • comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene · CPC title

  • Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene · CPC title

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What does patent US2023132149A1 cover?
Ultra-narrow bandgap Non Fullerene Acceptors (NFAs) comprising an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure were designed, synthesized, and characterized (where A, A′ are organic acceptor moieties and D and D′ are organic donor moieties). Exemplary NFA materials have narrow bandgap (0.86 eV-0.99 eV). Photovoltaic devices and Near Infrared photodetector devices based on these composi…
Who is the assignee on this patent?
Univ California
What technology area does this patent fall under?
Primary CPC classification H10K85/657. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Apr 27 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).