Power semiconductor device with an auxiliary gate structure

Patent metadata

Field	Value
Publication number	US-2023131602-A1
Application number	US-202217977535-A
Country	US
Kind code	A1
Filing date	Oct 31, 2022
Priority date	May 7, 2019
Publication date	Apr 27, 2023
Grant date	—

Abstract

A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal. The heterojunction device further comprises at least one main power heterojunction transistor, an auxiliary gate circuit comprising at least one first low-voltage heterojunction transistor, a pull-down circuit comprising a capacitor and a charging path for the capacitor. The heterojunction device further comprises at least one monolithically integrated component, wherein the capacitor is configured to provide an internal rail voltage for the at least one monolithically integrated component.

First claim

1 . A heterojunction device having at least three terminals, the at least three terminals comprising a high voltage terminal, a low voltage terminal and a control terminal, wherein the heterojunction device further comprises;
at least one main power heterojunction transistor, wherein the at least one main power heterojunction transistor comprises an internal gate terminal, a source terminal and a drain terminal, wherein the source terminal of the at least one main power heterojunction transistor is operatively connected to the low voltage terminal and the drain terminal of the at least one main power heterojunction transistor is operatively connected to the high voltage terminal; an auxiliary gate circuit comprising at least one first low-voltage heterojunction transistor, wherein the auxiliary gate circuit is operatively connected to the internal gate terminal of the at least one main power heterojunction transistor and to the control terminal; a pull-down circuit operatively connected to an internal gate terminal of the at least one first low-voltage heterojunction transistor and to the source terminal of the at least one main power heterojunction transistor, the pull-down circuit comprising:
a capacitor; and
a charging path for the capacitor;
the heterojunction device further comprising at least one monolithically integrated component, wherein the capacitor is configured to provide an internal rail voltage for the at least one monolithically integrated component.

2 . The heterojunction device of claim 1 , wherein the pull-down circuit comprises at least one non-linear element and at least one second low-voltage heterojunction transistor, the non-linear element comprising a potential divider for driving the gate terminal of the at least one second low-voltage heterojunction transistor.

3 . The heterojunction device of claim 1 , wherein the pull-down circuit comprises at least one source-gate connected or drain-gate connected low voltage enhancement mode heterojunction transistor.

4 . The heterojunction device of claim 1 , wherein the capacitor is operatively connected to the control terminal by the charging path, and wherein the charging path comprises at least one of a current source and a resistor.

5 . The heterojunction device of claim 1 wherein the capacitor is operatively connected to the drain terminal of the at least one main power heterojunction transistor by the charging path, and wherein the charging path comprises at least one depletion mode transistor.

6 . The heterojunction device of claim 1 , wherein the internal rail voltage is controlled by a voltage across the capacitor.

7 . The heterojunction device of claim 6 , wherein the voltage across the capacitor is limited by the pull-down circuit.

8 . The heterojunction device of claim 6 , wherein the capacitor is operatively connected to the high voltage terminal by a second charging path, and wherein the second charging path comprises at least one depletion mode transistor; and
wherein if charging only occurs through the second charging path, the voltage across the capacitor is limited by an absolute value of a threshold voltage of the depletion mode transistor.

9 . The heterojunction device of claim 1 , further comprising an external rail voltage terminal wherein a rail voltage may be provided.

10 . The heterojunction device of claim 1 , further comprising a gate voltage to logic signal clamping circuit configured to receive an input signal and provide a magnitude limited output signal, wherein a magnitude of the output signal is limited to a set maximum voltage, and wherein the logic signal clamping circuit comprises:
a current source operatively connected in series between an input source and the output; and one or more enhancement mode transistors operatively connected in series between the current source and a ground terminal, wherein the set maximum voltage of the output signal is based on a number of the one or more enhancement mode transistors.

11 . The heterojunction device of claim 1 , further comprising a gate voltage to logic signal clamping circuit configured to receive an input signal and provide a magnitude limited output signal, wherein a magnitude of the output signal is limited to a set maximum voltage, and wherein the logic signal clamping circuit comprises:
a current source operatively connected in series between an input source and the output; and a threshold multiplier circuit operatively connected between the current source and a ground terminal, and wherein the set maximum voltage of the output signal is based on a ratio of resistors forming the threshold multiplier circuit.

12 . The heterojunction device of claim 11 , further comprising a second capacitor operatively connected in parallel to the current source.

13 . The heterojunction device of claim 1 , further comprising a gate voltage to logic signal clamping circuit configured to receive an input signal and provide a magnitude limited output signal, and wherein the logic signal clamping circuit comprises:
a current source operatively connected in series between an input source and the output; and an enhancement mode transistor comprising a second source terminal connected to the current source and a second gate terminal connected to a fixed voltage source; and a resistor operatively connected between a second drain terminal of the enhancement mode transistor and a ground terminal; wherein the gate voltage to logic signal clamping circuit is configured such that the magnitude of a difference between the output signal voltage and the fixed voltage cannot be greater than an absolute value of a threshold voltage of the enhancement mode transistor.

14 . The heterojunction device of claim 1 , further comprising a DC to DC converter circuit forming a linear voltage regulator, the DC to DC converter block comprising:
an input terminal; an output terminal; a first transistor; a current source connected between the input terminal and a second drain terminal of the first transistor; a potential divider circuit, wherein a midpoint of the potential divider is connected to a second gate terminal of the first transistor; and a second transistor connected in series between the input terminal and the output terminal, wherein a third gate terminal of the second transistor is connected to the second drain terminal of the first transistor.

15 . The heterojunction device of claim 14 , wherein at least one of the first and second transistors is an enhancement mode transistor.

16 . The heterojunction device of claim 14 , wherein at least one of the first and second transistors is a depletion mode transistor.

17 . The heterojunction device of claim 1 , further comprising a DC to DC converter circuit forming a linear voltage regulator, the DC to DC converter block comprising:
an input terminal; an output terminal; one or more first enhancement mode transistors connected in series and configured to form a voltage multiplier structure; a current source connected between the input terminal and a second drain terminal of the first enhancement mode transistors; a second transistor connected in series between the input terminal and the output terminal, wherein a third gate terminal of the second transistor is connected to the second drain terminal of the one or more first enhancement mode transistors.

18 . The heterojunction device of claim 1 , further comprising a multi-stage inverter, wherein the multi-stage inverter comprises:
a first stage configured to receive the internal rail voltage as

Assignees

• Cambridge Entpr Ltd

Inventors

• Arnold Martin
• Fung Sheung Wai
• Efthymiou Loizos
• Udrea Florin
• Findlay John William

Classifications

• H10D84/0123

  Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs · CPC title

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D64/257

  for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title