A diamond scanning element, especially for imaging application, and a method for its fabrication

Patent metadata

Field	Value
Publication number	US-2023113008-A1
Application number	US-202117796323-A
Country	US
Kind code	A1
Filing date	Jan 22, 2021
Priority date	Jan 31, 2020
Publication date	Apr 13, 2023
Grant date	—

Abstract

A diamond scanning element, especially for an imaging application, includes a support and a pillar extending from the support. The pillar has a longitudinal axis and the pillar includes a tip with a tapered lateral section with a, preferably constantly, increasing curvature. The tip includes a sensor element, which is a defect, and a flat end facet extending toward the axis with a gradient of less than 10%.

First claim

1 - 17 . (canceled)

18 . A diamond scanning element for an imaging application, the diamond scanning element comprising:
a support; and a pillar extending from the support, wherein the pillar has a longitudinal axis and the pillar comprises a tip with a tapered lateral section with a constantly increasing curvature, wherein the tip includes a sensor element, which is a defect, and wherein the tip has a flat end facet extending toward the axis with a gradient of less than 10%.

19 . The diamond scanning element of claim 18 , wherein the flat end facet has a diameter between 100-300 nm.

20 . The diamond scanning element of claim 18 , wherein the defect provides one or more dipoles, which include an s-polarized dipole, that are oriented perpendicular and parallel to the longitudinal axis of the pillar respectively.

21 . The diamond scanning element of claim 18 , wherein the flat end facet has a diameter which is at least 1% of the length of the pillar.

22 . The diamond scanning element of claim 18 , wherein the flat end facet comprises the sensor element which is the defect, wherein the defect is a nitrogen-vacancy.

23 . The diamond scanning element of claim 18 , wherein the defect is at a center of the tip and with a depth of the defect from a surface of the flat end facet of less than 40 nm.

24 . The diamond scanning element of claim 18 , wherein a curvature of the tapered lateral section of the tip has a form of a paraboloidal section.

25 . A method for fabricating a diamond scanning element comprising a support and a pillar extending from the support, the method comprising:
providing a diamond material; depositing a resist on the diamond material; forming an etch mask on the diamond material; and etching, wherein the etching involves using a first chemical compound that primarily attacks the diamond material and thus forms a tapered conical pillar of diamond, and wherein the etching uses a second chemical compound, that primarily attacks the etch mask, that is added to the first chemical compound, wherein the etching involves first and second etching steps, wherein in the first etching step the first chemical compound forms the tapered conical pillar of diamond with taper angle of this section is less than 12 degrees, and wherein, simultaneously, the etch mask is eroded at an edge to form a trapezoidal cross section, wherein in the second etching step the etch chemistry is modified by adding the second chemical compound that etches the etch mask such that an angle of a resulting diamond sidewall is changed, wherein the first chemical compound is O 2 and the second chemical compound is CF 4 , and wherein multiple CF 4 :O 2 ratios are used sequentially to obtain a curved surface profile.

26 . The method of claim 25 , wherein the CF 4 is induced for an entire duration of the second etching step at increasing flow rates for successive steps, which erodes the etch mask in proportion to CF 4 concentration.

27 . The method of claim 25 , wherein a plasma-power and an RF Bias Power are kept constant during the etching over a time period when multiple CF 4 :O 2 ratios are applied in order to form the curved surface profile.

28 . The method of claim 25 , wherein the providing of the diamond material comprises generating a defect, which is a nitrogen-vacancy, at a center of a tip of the tapered conical pillar.

29 . The method of claim 25 , wherein the resist is an inorganic polymer layer, formed by a flowable oxide material, and wherein the etch mask is formed by electron beam lithography.

30 . The method of claim 25 , wherein, during the etching, an amount of etching of the etch mask or of the diamond material during the formation of the diamond scanning element is controlled by a ratio between the first and the second chemical compound, which are adjusted during the etching.

31 . The method of claim 25 , wherein, during the etching, the diamond material is exposed to an inductively coupled plasma, which causes the diamond material to be etched in a reactive ion etch process, wherein reactive ions are formed from the first and second chemical compounds.

32 . The method of claim 25 , wherein the etching is controlled such that sidewalls of the etch mask are inclined at a 45 degree angle with a deviation of less than 5 degrees.

33 . The method of claim 25 , wherein, by controlling a ratio between the first and the second chemical compound, a range of angles etched in the diamond material for forming a tip during etching are varied between 10 and 50 degrees.

34 . The method of claim 25 , wherein the first etching step comprises short steps of O2 and CF 4 to clean off resputtered material from walls of the device.

Assignees

• Univ Basel

Inventors

• Shields Brendan
• Hedrich Natascha
• Maletinsky Patrick

Classifications

• G01Q70/16

  Probe manufacture · CPC title

• C30B33/12 Primary

  in gas atmosphere or plasma · CPC title

• G01Q60/54

  Probes, their manufacture, or their related instrumentation, e.g. holders · CPC title

• G01Q70/14 Primary

  Particular materials · CPC title

• C30B29/04

  Diamond · CPC title