Ferroelectric material, and electronic device including the same

Patent metadata

Field	Value
Publication number	US-2023107911-A1
Application number	US-202217945528-A
Country	US
Kind code	A1
Filing date	Sep 15, 2022
Priority date	Sep 17, 2021
Publication date	Apr 6, 2023
Grant date	—

Abstract

Provided are a ferroelectric material and an electronic device including same, the ferroelectric material including: a first domain including a first polarization layer which is polarized in a first direction and a first spacer layer disposed adjacent to the first polarization layer; a second domain including a second polarization layer which is polarized in a second direction distinct from the first direction and a second spacer layer disposed adjacent to the second polarization layer; and a structural layer, which is disposed at a domain wall between the first domain and the second domain, and belongs to/has atoms arranged according to a Pbcn space group.

First claim

What is claimed is:

1 . A ferroelectric material comprising:
a first domain including a first polarization layer configured to be polarized in a first direction and a first spacer layer adjacent to the first polarization layer; a second domain including a second polarization layer configured to be polarized in a second direction distinct from the first direction and a second spacer layer adjacent to the second polarization layer; and a structural layer at a domain wall between the first domain and the second domain, the structural layer arranged as a Pbcn space group.

2 . The ferroelectric material of claim 1 , wherein the structural layer has an orthorhombic crystal structure.

3 . The ferroelectric material of claim 1 , wherein the structural layer comprises at least a portion of the first polarization layer and at least a portion of the second polarization layer.

4 . The ferroelectric material of claim 3 , wherein the first spacer layer and the second spacer layer are not present between the first polarization layer and the second polarization layer in the structural layer.

5 . The ferroelectric material of claim 1 , wherein the ferroelectric material includes a compound having a fluorite structure.

6 . The ferroelectric material of claim 1 , wherein the first polarization layer includes four oxygen atoms and two metal atoms, and the four oxygen atoms and the two metal atoms have non-symmetry in a polar C-axis direction, and
the first direction is one of two directions parallel to the polar C-axis direction.

7 . The ferroelectric material of claim 1 , wherein the second polarization layer includes four oxygen atoms and two metal atoms, and the four oxygen atoms and the two metal atoms have non-symmetry in a polar C-axis direction, and
the second direction is a direction opposite to the first direction which is one of two directions parallel to the polar C-axis direction.

8 . The ferroelectric material of claim 1 , wherein the first spacer layer is a non-polarizable layer, the spacer layer includes four oxygen atoms and two metal atoms, and the four oxygen atoms and the two metal atoms have symmetry in a polar C-axis direction.

9 . The ferroelectric material of claim 1 , wherein the first domain comprises a plurality of first polarization layers and a plurality of first spacer layers between the plurality of first polarization layers, and
the second domain comprises a plurality of second polarization layers and a plurality of second spacer layers disposed between the plurality of second polarization layers.

10 . The ferroelectric material of claim 9 , wherein the plurality of first polarization layers included in the first domain are configured to be polarized in the first direction, and the plurality of second polarization layers included in the second domain are configured to be polarized in the second direction.

11 . The ferroelectric material of claim 1 , wherein the first polarization layer and the second polarization layer have a same chirality.

12 . The ferroelectric material of claim 1 , wherein a strain applied to the structural layer is about -1% to about 1%.

13 . The ferroelectric material of claim 1 , wherein the first domain and the second domain each independently include at least one crystalline phase selected from an orthorhombic crystalline phase, a tetragonal crystalline phase, and a cubic crystalline phase.

14 . The ferroelectric material of claim 13 , wherein the orthorhombic crystalline phase is arranged as a Pca21 space group, the tetragonal crystalline phase is arranged as a P4 2 /nmc space group, and the cubic crystalline phase is arranged as a Fm-3m space group.

15 . The ferroelectric material of claim 1 , wherein an amount of the structural layer is greater than 0 vol% and less than or equal to about 40 vol% with respect to a total volume of the ferroelectric material.

16 . The ferroelectric material of claim 1 , wherein the ferroelectric material comprises a binary metal oxide represented by Formula 1:
<Formula 1> MO 2 wherein, in Formula 1, M is an element which belongs to Group IV of the periodic table of the elements.

17 . The ferroelectric material of claim 16 , wherein M is Hf or Zr.

18 . The ferroelectric material of claim 16 , wherein the binary metal oxide comprises a dopant.

19 . The ferroelectric material of claim 18 , wherein the dopant is at least one selected from C, Si, Ge, Sn, Pb, Al, Y, La, Gd, Mg, Ca, Sr Ba, and Ti.

20 . The ferroelectric material of claim 1 , wherein the ferroelectric material comprises a binary metal oxide represented by Formula 2 or 3:
<Formula 2> Hf 1 - x D x O 2 <Formula 3> Zr 1-x D x O 2 wherein, in Formulae 2 and 3, D is at least one selected from C, Si, Ge, Sn, Pb, Al, Y, La, Gd, Mg, Ca, Sr Ba, and Ti, and 0≤x≤0.15.

21 . An electronic device comprising a thin-film dielectric layer, wherein the thin-film dielectric layer comprises the ferroelectric material according to claim 1 .

22 . The electronic device of claim 21 , wherein the thin-film dielectric layer has a thickness of about 0.1 nm to about 50 nm.

23 . The electronic device of claim 21 , wherein a current versus time profile in response to polarization switching occurring due to application of a voltage to the thin-film dielectric layer has a peak in a range of greater than 0 and less than or equal to 5 × 10 -7 sec.

24 . The electronic device of claim 21 , further comprising:
a thin-film electrode layer, wherein the thin-film dielectric layer is arranged on a surface or both surfaces of the thin-film electrode layer.

25 . The electronic device of claim 24 , wherein the thin-film electrode layer has a thickness of about 10 nm to about 1000 nm.

26 . The electronic device of claim 24 , wherein the thin-film electrode layer comprises at least one selected from a metal, an oxide of the metal, a doped oxide of the metal, a nitride of the metal, and a carbide of the metal.

27 . The electronic device of claim 26 , wherein a metal included in the thin-film electrode layer comprises at least one selected from Ti, W, Ta, Co, Mo, Ni, V, Hf, Al, Cu, Pt, Pd, Ir, Au, and Ru,
the oxide of the metal comprises at least one selected from RuO 2 , IrO 2 , PtO 2 , MnO 2 , Sb 2 O 3 , and ln 2 O 3 , the doped oxide of the metal comprises at least one selected from a Ta-doped SnO 2 , a Ti-doped ln 2 O 3 , a Ni-doped SnO 2 , a Sb-doped SnO 2 , and an Al-doped ZnO, and the nitride of the metal comprises at least one selected from TiN, WN, TaN, TiAIN, TaSiN, TiSiN, WSiN, TiCN, TiAICN, RuCN, and RuTiN.

28 . The electronic device of claim 21 , wherein the electronic device is at least one of a capacitor, a transistor, or a memory cell.

29 . The electronic device of claim 21 , further comprising:
a semiconductor substrate including a source and a domain; and a gate electrode arranged on the semiconductor substrate, wherein the thin-film dielectric layer is between the semiconductor substrate and the gate electrode.

30 . The electronic device of claim 29 , further comprising:
an insulating layer arranged between the thin-film dielectric layer and the semiconductor substrate.

31 . The electronic device of claim 29 , further comprising a capacitor,
wherein the capacitor comprises: the thin-film

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choe Dukhyun
• Heo Jinseong
• Lee Yunseong

Classifications

• H10D1/68

  Capacitors having no potential barriers · CPC title

• H10D30/501

  FETs having stacked nanowire, nanosheet or nanoribbon channels · CPC title

• C30B29/16 Primary

  Oxides · CPC title

• H10D62/121

  oriented parallel to substrates · CPC title

• H10D30/0415

  of FETs having ferroelectric gate insulators · CPC title