Semiconductor optical device and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-2023106955-A1
Application number	US-202217653745-A
Country	US
Kind code	A1
Filing date	Mar 7, 2022
Priority date	Oct 1, 2021
Publication date	Apr 6, 2023
Grant date	—

Abstract

A semiconductor optical device includes: a lower mesa structure extending in a stripe shape and composed of some layers including an active layer; a buried layer configured to bury both sides of the lower mesa structure and made of indium phosphide; and an upper mesa structure extending in a stripe shape and composed of some layers including a bottom layer made of phosphorus-free materials, the bottom layer having a bottom surface protruding from a topmost layer of the lower mesa structure, the bottom surface being in contact with the lower mesa structure and the buried layer.

First claim

What is claimed is:

1 . A semiconductor optical device comprising:
a lower mesa structure extending in a stripe shape and composed of some layers including an active layer; a buried layer configured to bury both sides of the lower mesa structure and made of indium phosphide; and an upper mesa structure extending in a stripe shape and composed of some layers including a bottom layer made of phosphorus-free materials, the bottom layer having a bottom surface protruding from a topmost layer of the lower mesa structure, the bottom surface being in contact with the lower mesa structure and the buried layer.

2 . The semiconductor optical device according to claim 1 , wherein the buried layer is thickest at a portion in contact with the bottom surface of the bottom layer.

3 . The semiconductor optical device according to claim 2 , wherein the portion of the buried layer in contact with the bottom surface of the bottom layer is a protrusion.

4 . The semiconductor optical device according to claim 1 , further comprising an insulation layer covering a side surface of the upper mesa structure and an upper surface of the buried layer.

5 . The semiconductor optical device according to claim 4 , wherein
the buried layer has a portion between the topmost layer of the lower mesa structure and the insulation layer, and the insulation layer is not in contact with the topmost layer.

6 . The semiconductor optical device according to claim 4 , wherein
the insulation layer has a contact surface with the buried layer, and the contact surface is lower than the bottom surface of the bottom layer.

7 . The semiconductor optical device according to claim 1 , wherein a base under the buried layer is made of indium phosphide.

8 . The semiconductor optical device according to claim 7 , wherein the base under the buried layer is a buffer layer on a substrate.

9 . The semiconductor optical device according to claim 1 , wherein material of the bottom layer is any one of InGaAlAs, InAlAs, or InGaAs.

10 . A method for manufacturing a semiconductor optical device, the method comprising:
forming a mesa stripe structure, the mesa stripe structure including a lower mesa structure extending in a stripe shape and composed of some layers including an active layer, the mesa stripe structure including an upper mesa structure extending in a stripe shape on the lower mesa structure and composed of some layers including a bottom layer, the bottom layer having a bottom surface protruding from a topmost layer of the lower mesa structure, the bottom layer being made of phosphorus-free materials; and after forming the mesa stripe structure, forming a buried layer made of indium phosphide on both sides of the lower mesa structure, by crystal growth, to be in contact with the bottom surface.

11 . The method for manufacturing the semiconductor optical device according to claim 10 , wherein the crystal growth is performed with the upper mesa structure, except for the bottom surface, covered with a patterning mask.

12 . The method for manufacturing the semiconductor optical device according to claim 11 , wherein the patterning mask protrudes along a side surface of the upper mesa structure to exceed the bottom surface.

13 . The method for manufacturing the semiconductor optical device according to claim 12 , wherein the patterning mask, at a position spaced from the topmost layer of the lower mesa structure, protrudes in a direction away from the topmost layer.

14 . The method for manufacturing the semiconductor optical device according to claim 10 , wherein forming the mesa stripe structure comprises:
depositing multiple layers to be the upper mesa structure and the lower mesa structure; performing an etching on a laminate to be the upper mesa structure and a layer to be the topmost layer of the lower mesa structure, leaving an area corresponding to the upper mesa structure; performing a first selective etching whose reaction is slow for the topmost layer of the lower mesa structure but is active for a laminate to be layers of the lower mesa structure other than the topmost layer; and performing a second selective etching whose reaction is slow for the bottom layer of the upper mesa structure but is active for the etched layer to be the topmost layer of the lower mesa structure,
wherein the first selective etching and the second selective etching are performed to leave an area corresponding to the lower mesa structure.

15 . The method for manufacturing the semiconductor optical device according to claim 14 , the method further comprising forming an etching mask to cover the area corresponding to the upper mesa structure, before performing the first selective etching.

16 . The method for manufacturing the semiconductor optical device according to claim 14 , wherein
a base on which the multiple layers are deposited and the layer to be the topmost layer are made of indium phosphide, and the base under the multiple layers is etched in the second selective etching.

Assignees

• Lumentum Japan Inc

Inventors

• Suga Kazuki
• Nakahara Kouji

Classifications

• H01S5/22

  having a ridge or stripe structure · CPC title

• H01S5/2224

  semi-insulating semiconductors · CPC title

• H01S5/0265

  Intensity modulators (intra-cavity modulators H01S5/0625) · CPC title

• H01S5/34366

  based on InGa(Al)AS · CPC title

• H01S5/2226

  semiconductors with a specific doping · CPC title