Percolation doping of inorganic - organic frameworks for multiple device applications

Patent metadata

Field	Value
Publication number	US-2023097847-A1
Application number	US-202117485659-A
Country	US
Kind code	A1
Filing date	Sep 27, 2021
Priority date	Sep 27, 2021
Publication date	Mar 30, 2023
Grant date	—

Abstract

A porous thin film includes a framework that includes a plurality of pores. The pores extend from an opening located at an upper surface of the framework to a bottom surface contained in the framework. A pore-coating film is formed on sidewalls and the bottom surface of the pores.

First claim

What is claimed is:

1 . A method to synthesize a porous thin film, the method comprising:
performing an oxidation process to remove carbon impurities from a framework such that pores are formed in the framework, each of the pores extending from an upper surface of the framework to a bottom surface contained in the framework.

2 . The method of claim 1 , further comprising doping the framework by performing a high aspect ratio (HAR) atomic layer deposition (ALD) process to deposit a pore-coating film that coats sidewalls and the bottom surface of the pores, wherein a thickness of the pore-coating film defines an inner thickness of the pores.

3 . The method of claim 2 , wherein the framework comprises a first metal oxide material.

4 . The method of claim 3 , wherein the first metal oxide comprises hafnium oxide (HfO 2 ).

5 . The method of claim 4 , wherein the pore-coating film comprises a second metal oxide material.

6 . The method of claim 5 , wherein the pore-coating film comprises aluminum oxide (Al 2 O 3 ).

7 . The method of claim 2 , wherein the HAR ALD process includes an infiltration process performed at a temperature that is less than about 350 degrees Celsius.

8 . The method of claim 7 , wherein the oxidation process performed to remove the carbon impurities includes a remote plasma etch.

9 . The method of claim 8 , wherein the remote plasma etch is performed at a temperature of about 100° C. for a time period ranging from about 10 seconds to about 600 seconds or more depending on film thickness and diffusion of oxidant into film.

10 . A method to synthesize a porous thin film, the method comprising:
forming a non-organic framework including a plurality of organic impurities, the organic impurities extending from a first end located at an upper surface of the framework to a second end contained in the framework; removing the organic impurities to form pores extending from the upper surface of the framework to a bottom surface contained in the framework; and coating sidewalls and the bottom surface of the pores with a pore-coating film.

11 . The method of claim 10 , wherein forming the non-organic framework includes performing an atomic layer deposition (ALD) process to deposit a metal oxide material on a substrate.

12 . The method of claim 11 , wherein the ALD process uses an oxidizer and is performed at a low temperature ranging, for example, from about 50 degrees Celsius (50° C.) to about 250° C. so as to form organic impurities comprising a carbon material.

13 . The method of claim 12 , wherein the oxidizer is one of water or an alcohol-based precursor.

14 . The method of claim 12 , wherein the metal oxide material is selected from the group consisting of hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ) zirconium oxide (ZrO), cerium oxide (CeO 2 ) and titanium oxide (TiO 2 ).

15 . The method of claim 10 , wherein coating the sidewalls and the bottom surface of the pores with the pore-coating film comprises performing a performing high aspect ratio (HAR) atomic layer deposition (ALD) process at a temperature that is less than about 350 degrees Celsius.

16 . The method of claim 15 , wherein the pore-coating film comprises a second metal oxide material.

17 . The method of claim 10 , wherein removing the organic impurities comprises performing a remote plasma etch at a temperature of about 100° C. for a time period ranging from about 10 seconds to about 600 seconds or more depending on film thickness and diffusion of oxidant into film.

18 . A porous thin film comprising:
a framework on a substrate; a plurality of pores in the framework, the pores extending from an opening located at an upper surface of the framework to a bottom surface contained in the framework; a pore-coating film on sidewalls and the bottom surface of the pores.

19 . The porous thin film of claim 18 , wherein the pore-coating film has a thickness, and wherein the thickness of the pore-coating film defines a void in the pores, the void extending from the opening to the bottom surface.

20 . The porous thin film of claim 19 , wherein the framework comprises one of a first metal oxide material or a polymer material, and wherein the pore-coating film comprises a metal oxide material.

Assignees

• IBM

Inventors

• Ocola Leonidas Ernesto
• Joseph Eric A
• Miyazoe Hiroyuki
• Ando Takashi
• Farmer Damon Brooks

Classifications

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/665 Primary

  Porous materials · CPC title

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title