Light detector, light detection system, lidar device, and mobile body

Patent metadata

Field	Value
Publication number	US-2023083263-A1
Application number	US-202217682834-A
Country	US
Kind code	A1
Filing date	Feb 28, 2022
Priority date	Sep 15, 2021
Publication date	Mar 16, 2023
Grant date	—

Abstract

According to one embodiment, a light detector includes a plurality of elements, a plurality of insulating parts, and an intermediate part. The plurality of elements are arranged along a first direction and a second direction. The first direction and the second direction cross each other. Each of the plurality of elements includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of a first conductivity type. The second semiconductor region is located around the first semiconductor region in a first plane. The first plane is along the first and second directions. The second semiconductor region is of a second conductivity type. The plurality of insulating parts are located respectively around the plurality of elements in the first plane. The intermediate part is located around the plurality of insulating parts in the first plane. The intermediate part includes a semiconductor.

First claim

What is claimed is:

1 . A light detector, comprising:
a plurality of elements arranged along a first direction and a second direction, the first direction and the second direction crossing each other, each of the plurality of elements including
a first semiconductor region of a first conductivity type, and
a second semiconductor region located around the first semiconductor region in a first plane, the first plane being along the first and second directions, the second semiconductor region being of a second conductivity type;
a plurality of insulating parts located respectively around the plurality of elements in the first plane; and an intermediate part located around the plurality of insulating parts in the first plane, the intermediate part including a semiconductor.

2 . The detector according to claim 1 , wherein
at least one of the plurality of insulating parts is a rounded quadrilateral, a polygon with interior angles of not less than 135 degrees, or a circular ring when viewed along a third direction, and the third direction is perpendicular to the first and second directions.

3 . The detector according to claim 1 , wherein
a distance between the elements that are next to each other in the first direction is not less than 3 μm.

4 . The detector according to claim 1 , wherein
the intermediate part includes:
a first intermediate region of the first conductivity type; and
a second intermediate region located on the first intermediate region, and
the second intermediate region is of the second conductivity type.

5 . The detector according to claim 4 , further comprising:
a contact plug located on the second intermediate region, the contact plug being electrically connected with the second intermediate region.

6 . The detector according to claim 1 , further comprising:
a first semiconductor layer of the first conductivity type, the plurality of elements being located on the first semiconductor layer.

7 . The detector according to claim 6 , further comprising:
an electrode located under the first semiconductor layer, the first semiconductor region being electrically connected with the electrode via the first semiconductor layer.

8 . The detector according to claim 1 , wherein
each of the plurality of elements further includes a third semiconductor region surrounded with the first semiconductor region in the first plane, the third semiconductor region is of the first conductivity type, and a first-conductivity-type impurity concentration in the third semiconductor region is less than a first-conductivity-type impurity concentration in the first semiconductor region.

9 . The detector according to claim 1 , wherein
each of the plurality of elements further includes a fourth semiconductor region surrounded with an upper portion of the second semiconductor region in the first plane, the fourth semiconductor region is of the second conductivity type, and a second-conductivity-type impurity concentration in the fourth semiconductor region is less than a second-conductivity-type impurity concentration in the second semiconductor region.

10 . The detector according to claim 1 , further comprising:
a plurality of fifth semiconductor regions respectively contacting bottom portions of the plurality of insulating parts, the plurality of fifth semiconductor regions being of the second conductivity type.

11 . The detector according to claim 1 , further comprising:
a plurality of sixth semiconductor regions located respectively between the intermediate part and the plurality of insulating parts, the plurality of sixth semiconductor regions being of the second conductivity type.

12 . The detector according to claim 1 , further comprising:
a resistance electrically connected with one of a plurality of the first semiconductor regions or one of a plurality of the second semiconductor regions, or a switching element electrically connected with at least one of the plurality of first semiconductor regions or at least one of the plurality of second semiconductor regions.

13 . The detector according to claim 1 , wherein
at least one of the plurality of elements includes an avalanche photodiode.

14 . The detector according to claim 13 , wherein
the avalanche photodiode operates in a Geiger mode.

15 . The detector according to claim 1 , further comprising:
a quenching part electrically connected with at least one of a plurality of the first semiconductor regions or at least one of a plurality of the second semiconductor regions.

16 . The detector according to claim 15 , further comprising:
a first electrode electrically connected with a plurality of the first semiconductor regions; and a second electrode electrically connected with a plurality of the second semiconductor regions.

17 . The detector according to claim 16 , further comprising:
a first interconnect electrically connected with at least two of the plurality of first semiconductor regions; and a second interconnect electrically connected with at least two of the plurality of second semiconductor regions, the plurality of first semiconductor regions being electrically connected with the first electrode via at least one of the first interconnects, the plurality of second semiconductor regions being electrically connected with the second electrode via at least one of the second interconnects.

18 . A light detection system, comprising:
the light detector according to claim 1 ; and a distance measuring circuit calculating a time-of-flight of light by using an output signal of the light detector.

19 . A lidar device, comprising:
a light source irradiating light on an object; and the light detection system according to claim 18 detecting light reflected by the object.

20 . The device according to claim 19 , further comprising:
an image recognition system generating a three-dimensional image based on an arrangement relationship of the light source and the light detector.

21 . A mobile body, comprising:
the lidar device according to claim 18 .

Assignees

• Toshiba Kk

Inventors

• Fujiwara Ikuo
• Shimizu Mariko
• Kwon Honam
• Suzuki Kazuhiro

Classifications

• H10F39/8037 Primary

  the integrated elements comprising a transistor · CPC title

• H10F30/225

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• G01S17/42

  Simultaneous measurement of distance and other co-ordinates (indirect measurement G01S17/46) · CPC title

• G01S17/931

  of land vehicles · CPC title