Pattern Film, Method for Manufacturing Pattern Film, and Transmittance Variable Device Comprising Same

US2023059263A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2023059263-A1
Application numberUS-202117792470-A
CountryUS
Kind codeA1
Filing dateFeb 4, 2021
Priority dateFeb 18, 2020
Publication dateFeb 23, 2023
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A pattern film, a method for manufacturing a pattern film, and a transmittance variable device comprising the same are disclosed herein. In some embodiments, a pattern film includes a base layer, and a spacer pattern formed on the base layer, the spacer pattern comprises a partition wall spacer comprises a plurality of spacer dots and a spacer line connecting the spacer dots, and a ball spacer, the ball spacer is one of embedded in, partially embedded in, or in contact with the partition wall spacer, when any 3 or more spacer dots are selected, the spacer line forms a closed figure having the selected spacer dots at the vertices thereof, the selected spacer dots are not present inside the closed figure, a length of at least one side of the closed figure is different from lengths of the remaining sides, and each spacer dot has irregularity of 50% or greater.

First claim

Opening claim text (preview).

1 . A pattern film, comprising: a base layer; and a spacer pattern formed on the base layer, wherein the spacer pattern comprises a partition wall spacer and a ball spacer, wherein the partition wall spacer comprises a plurality of spacer dots and a spacer line connecting the spacer dots, wherein the ball spacer is one of embedded in, partially embedded in, or in contact with the partition wall spacer, wherein, when any 3 or more spacer dots are selected among the plurality of spacer dots, the spacer line forms a closed figure having the selected spacer dots at the vertices thereof, wherein the selected spacer dots are not present inside the closed figure, wherein a length of at least one side of the closed figure is different from the lengths of the remaining sides, and wherein each spacer dot in the plurality has irregularity of 50% or greater. 2 . The pattern film of claim 1 , wherein a line width (T) of the partition wall of the partition wall spacer and an average particle diameter (D) of the ball spacer satisfy the following Equation 1: 1.0≤ T/D≤ 20.  [Equation 1] 3 . The pattern film of claim 1 , wherein the base layer is an inorganic base layer or an organic base layer. 4 . The pattern film of claim 1 , wherein the spacer pattern has optical density of 0.4 or greater and 4 or less. 5 . The pattern film of claim 1 , wherein the spacer pattern has a line width of 10 μm or greater and 200 μm or less. 6 . The pattern film of claim 1 , wherein a total area (A) of the base layer and an area (B) of the surface of the base layer in contact with the spacer pattern satisfy the following Equation 2: 5≤[ B/A ]×100(%)≤30.  [Equation 2] 7 . The pattern film of claim 1 , wherein an average value of a height of the partition wall spacer is 2 μm or greater and 100 μm or less, and a standard deviation of the height of the partition wall spacer is 0.05 μm or greater and 0.5 μm or less. 8 . The pattern film of claim 1 , wherein a standard deviation of a particle diameter of the ball spacer is 0.8 μm or less. 9 . The pattern film of claim 1 , wherein less than 85% of the sides of the closed figure have the same length. 10 . The pattern film of claim 1 , wherein a rectangular 200×200 pixel area is set based on an area of the pattern film through which light passes from an LED light source, and wherein, using a lower left end corner of the rectangular 200×200 pixel area as x axis, y axis (0,0), the rectangular 200×200 pixel area of (0,0) to (200,200) satisfies the following Equation 3: 2≤ D 1− D 2(%)≤10  [Equation 3] in Equation 3, D1 is a diffraction ratio when the spacer dot of the pattern film has irregularity of 0%; D2 is a diffraction ratio when the spacer dot of the pattern film has irregularity of 70%; and each diffraction ratio satisfies the following Equation 4: [1− Sc/S ]×100(%)  [Equation 4] in Equation 4, S is a total amount of light in the rectangular 200×200 pixel area of (0,0) to (200,200); and Sc is an amount of pixel light in an area having pixels employing (100,100) as an origin and having a radius of 50 in the rectangular 200×200 pixel area of (0,0) to (200,200). 11 . A method for manufacturing pattern film, the method comprising: forming an ultraviolet curable resin layer comprising a ball spacer on one surface of a base layer; laminating a film mask on the ultraviolet curable resin layer; irradiating the ultraviolet curable resin layer with ultraviolet light through the film mask; peeling the film mask from the ultraviolet curable resin layer after the irradiation; and peeling an uncured area of the ultraviolet curable resin layer after the irradiation. 12 . A transmittance variable device, comprising: the pattern film of claim 1 ; and a substrate disposed opposite to the pattern film, wherein the base layer of the pattern film and the substrate are separated by a space, and wherein the space is maintained by the spacer pattern of the pattern film. 13 . The transmittance variable device of claim 12 , comprising an adhesive layer disposed between the pattern film and the substrate, wherein the adhesive layer has a vertical alignment force.

Assignees

Inventors

Classifications

  • G02B5/3016Primary

    involving passive liquid crystal elements (optical properties of liquid crystals G02F1/0063; polarising elements associated with active liquid crystal devices G02F1/133528) · CPC title

  • Diffraction gratings {(holographic optical elements G02B5/32, G03H; integrally combined with optical fibres G02B6/02057; for coupling light guides G02B6/34; integrally combined with optical integrated light guides G02B6/12; grating systems G02B27/44)} · CPC title

  • G02B5/003Primary

    Light absorbing elements · CPC title

  • G02B5/1847Primary

    Manufacturing methods · CPC title

  • Structural association of cells with optical devices, e.g. polarisers or reflectors · CPC title

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What does patent US2023059263A1 cover?
A pattern film, a method for manufacturing a pattern film, and a transmittance variable device comprising the same are disclosed herein. In some embodiments, a pattern film includes a base layer, and a spacer pattern formed on the base layer, the spacer pattern comprises a partition wall spacer comprises a plurality of spacer dots and a spacer line connecting the spacer dots, and a ball spacer,…
Who is the assignee on this patent?
Lg Chemical Ltd
What technology area does this patent fall under?
Primary CPC classification G02B5/3016. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Feb 23 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).