Memory performance evaluation using address mapping information
US-2024394164-A1 · Nov 28, 2024 · US
US2023030620A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023030620-A1 |
| Application number | US-202117387092-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 28, 2021 |
| Priority date | Jul 28, 2021 |
| Publication date | Feb 2, 2023 |
| Grant date | — |
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In general, embodiments of the invention relate tracking the operating temperature of the solid-state memory modules (SSMMs) in order to improve their performance.
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What is claimed is: 1 . A method for managing a solid state memory module, the method comprising: obtaining a temperature reading for the solid state memory module; determining a counter increment value for a counter, wherein the counter is associated with a block in the solid state memory module, and wherein the counter increment value is determined using the temperature reading; updating a counter value for the counter using the counter increment value to obtain an updated counter value; making a determination that the updated counter value exceeds a threshold; and in response to the determination, performing a preventative operation. 2 . The method of claim 1 , further comprising: resetting the counter after the preventative operation is performed to a default value. 3 . The method of claim 1 , wherein the block comprises data; and wherein the updated counter value is a temperature modified retention time for the block. 4 . The method of claim 3 , wherein the threshold is an integrity threshold; and wherein the preventative operation is a garbage collection operation. 5 . The method of claim 1 , wherein the block is an erased block; and wherein the updated counter value is a temperature modified erase time for the block. 6 . The method of claim 5 , wherein the threshold is an erase bake threshold; and wherein the preventative operation is a re-erase operation. 7 . The method of claim 1 , wherein the threshold is determined using a default temperature and the temperature reading is above or below the default temperature. 8 . The method of claim 1 , wherein the temperature reading is a composition temperature reading derived from two or more separate temperature readings associated with the solid state memory module. 9 . A storage module, comprising: a storage module controller; a plurality of solid state memory modules; and a plurality of temperature sensors, wherein the storage module controller is configured to: obtain a composition temperature reading for a solid state memory module of the plurality of solid state memory modules based on plurality of temperature readings from the plurality of temperature sensors; determine a counter increment value for a counter, wherein the counter is associated with a block in the solid state memory module and wherein the counter increment value is determined using the composite temperature reading; update a counter value for the counter using the counter increment value to obtain an updated counter value; make a determination that the updated counter value exceeds a threshold; in response to the determination, perform a preventative operation; and reset the counter after the preventative operation is performed. 10 . The storage module of claim 9 , wherein the block comprises data; and wherein the updated counter value is a temperature modified retention time for the block. 11 . The storage module of claim 10 , wherein the threshold is an integrity threshold; and wherein the preventative operation is a garbage collection operation. 12 . The storage module of claim 9 , wherein the block is an erased block; and wherein the updated counter value is a temperature modified erase time for the block. 13 . The storage module of claim 12 , wherein the threshold is an erase bake threshold; and wherein the preventative operation is a re-erase operation. 14 . The storage module of claim 9 , wherein the threshold is determined using a default temperature and the composite temperature reading is above or below the default temperature. 15 . A non-transitory computer readable medium comprising computer readable program code to: obtain a temperature reading for a solid state memory module; determine a counter increment value for a counter, wherein the counter is associated with a block in the solid state memory module and wherein the counter increment value is determined using the temperature reading; update a counter value for the counter using the counter increment value to obtain an updated counter value; make a determination that the updated counter value exceeds a threshold, wherein the threshold is determined using an default temperature and the temperature reading is above the default temperature; and in response to the determination, perform a preventative operation. 16 . The non-transitory computer readable medium of claim 15 , wherein the computer readable program code further: resets the counter after the preventative operation is performed. 17 . The non-transitory computer readable medium of claim 15 , wherein the block comprises data; and wherein the updated counter value is a temperature modified retention time for the block. 18 . The non-transitory computer readable medium of claim 17 , wherein the threshold is an integrity threshold; and wherein the preventative operation is a garbage collection operation. 19 . The non-transitory computer readable medium of claim 15 , wherein the block is an erased block; and wherein the updated counter value is a temperature modified erase time for the block. 20 . The non-transitory computer readable medium of claim 19 , wherein the threshold is an erase bake threshold; and wherein the preventative operation is a re-erase operation.
Power saving in memory, e.g. RAM, cache · CPC title
of memory devices · CPC title
Monitoring of events, devices or parameters that trigger a change in power modality · CPC title
comprising thermal management · CPC title
Cleaning, compaction, garbage collection, erase control · CPC title
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