Nitride semiconductor device and method for manufacturing nitride semiconductor device
US-2015311331-A1 · Oct 29, 2015 · US
Manufacturing Method of Nitride Semiconductor Photoelectrode
US2022403529A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022403529-A1 |
| Application number | US-201917780277-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 3, 2019 |
| Priority date | Dec 3, 2019 |
| Publication date | Dec 22, 2022 |
| Grant date | — |
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Abstract
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A method for producing a nitride semiconductor photoelectrode includes: a first step of forming an n-type gallium nitride layer on an electrically insulative or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a p-type nickel oxide layer on the indium gallium nitride layer; and a fourth step of subjecting a nitride semiconductor in which the p-type nickel oxide layer has been formed to heat treatment.
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1 . A method for producing a nitride semiconductor photoelectrode, the method comprising: a first step of forming an n-type gallium nitride layer on an electrically insulative or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a p-type nickel oxide layer on the indium gallium nitride layer; and a fourth step of subjecting a nitride semiconductor in which the p-type nickel oxide layer has been formed to heat treatment. 2 . The method for producing a nitride semiconductor photoelectrode according to claim 1 , wherein metal organic chemical vapor deposition is used in the first step and the second step. 3 . The method for producing a nitride semiconductor photoelectrode according to claim 1 , wherein vapor deposition or sputtering is used in the third step. 4 . The method for producing a nitride semiconductor photoelectrode according to claim 1 , wherein the heat treatment is performed at a temperature of 200° C. or higher and 800° C. or lower in the fourth step. 5 . The method for producing a nitride semiconductor photoelectrode according to claim 2 , wherein vapor deposition or sputtering is used in the third step. 6 . The method for producing a nitride semiconductor photoelectrode according to claim 2 , wherein the heat treatment is performed at a temperature of 200° C. or higher and 800° C. or lower in the fourth step. 7 . The method for producing a nitride semiconductor photoelectrode according to claim 3 , wherein the heat treatment is performed at a temperature of 200° C. or higher and 800° C. or lower in the fourth step.
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Classifications
of iron group metals · CPC title
Epitaxial-layer growth · CPC title
- C23C28/04Primary
only coatings of inorganic non-metallic material · CPC title
AIII-nitrides · CPC title
- C23C16/303Primary
Nitrides · CPC title
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- What does patent US2022403529A1 cover?
- A method for producing a nitride semiconductor photoelectrode includes: a first step of forming an n-type gallium nitride layer on an electrically insulative or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a p-type nickel oxide layer on the indium gallium nitride layer; and a fourth step of subjecting…
- Who is the assignee on this patent?
- Nippon Telegraph & Telephone
- What technology area does this patent fall under?
- Primary CPC classification C23C28/04. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Dec 22 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).