Method for depositing a two-dimensional coating and cvd reactor

Patent metadata

Field	Value
Publication number	US-2022403519-A1
Application number	US-202017773523-A
Country	US
Kind code	A1
Filing date	Oct 30, 2020
Priority date	Nov 5, 2019
Publication date	Dec 22, 2022
Grant date	—

Abstract

A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber. To deposit heterostructures, in a first step, an inert or a diluent gas is fed into the first gas distribution chamber and a reactive gas containing the elements of a first coating is fed into the second gas distribution chamber. The reactive gas pyrolytically decomposes in the process chamber to form the first coating on the substrate. In a second step, a diluent gas is fed into the second gas distribution chamber and a reactive gas containing the elements of a second coating is fed into the first gas distribution chamber. The reactive gas or gas mixture decomposes in the process chamber to form the second coating on the substrate.

First claim

1 . A method for depositing a first and second coating on a substrate ( 4 ) in a chemical vapor deposition (CVD) reactor ( 1 ) that includes a process chamber ( 3 ) and a gas inlet member ( 2 ), the gas inlet member ( 2 ) including a first gas distribution chamber ( 11 ) and a second gas distribution chamber ( 21 ) separated from the first gas distribution chamber ( 11 ), the method comprising:
(i) feeding an inert gas or a diluent gas into the process chamber ( 3 ) through the first gas distribution chamber ( 11 ) while feeding a first reactive gas or a first gas mixture into the process chamber ( 3 ) through the second gas distribution chamber ( 21 ); (ii) heating the substrate ( 4 ) to a process temperature so as to form the first coating on a surface of the substrate ( 4 ) from decomposition products of the first reactive gas or the first gas mixture; (iii) feeding the inert gas or the diluent gas into the process chamber ( 3 ) through the second gas distribution chamber ( 21 ) while feeding a second reactive gas or a second gas mixture into the process chamber ( 3 ) through the first gas distribution chamber ( 11 ); and (iv) heating the substrate ( 4 ) to the process temperature so as to form the second coating on or adjacent to the first coating from decomposition products of the second reactive gas or the second gas mixture.

2 . (canceled)

3 . The method of claim 1 , wherein the first reactive gas is different from the second reactive gas.

4 . The method of claim 1 , further comprising repeating steps (i)-(iv).

5 . The method of claim 1 , wherein the first coating is different from the second coating.

6 . The method of claim 1 , wherein the second coating is deposited on the first coating.

7 . The method of claim 1 , wherein the first reactive gas is different from the second reactive gas, and the first gas mixture is different from the second gas mixture.

8 . The method of claim 1 , further comprising:
flowing the inert gas or the diluent gas into the first or the second gas distribution chamber through a switching apparatus ( 33 , 33 ′; 37 , 37 ′; 38 , 38 ′); flowing the first reactive gas or the first gas mixture into the first or the second gas distribution chamber through the switching apparatus ( 33 , 33 ′; 37 , 37 ′; 38 , 38 ′); and flowing the second reactive gas or the second gas mixture into the first or the second gas distribution chamber through the switching apparatus ( 31 , 33 ′; 37 , 37 ′; 38 , 38 ′).

9 . The method of claim 1 , further comprising flowing the first or second reactive gas through a vent line ( 35 ) instead of through a run line ( 34 , 34 ′) which is fluidly connected to the process chamber ( 3 ).

10 . The method of claim 1 ,
wherein the first gas distribution chamber ( 11 ) is fluidly connected to the process chamber ( 3 ) via a first plurality of pipes ( 12 ), wherein the second gas distribution chamber ( 21 ) is fluidly connected to the process chamber ( 3 ) via a second plurality of pipes ( 22 ), wherein the first gas distribution chamber ( 11 ) is separated from the second gas distribution chamber ( 21 ) by an intermediate plate ( 13 ), wherein the first plurality of pipes ( 12 ) open into the process chamber ( 3 ) via a first plurality of gas outlet openings ( 14 ) that are uniformly distributed over a gas outlet surface ( 25 ) of the gas inlet member ( 2 ), and wherein the second plurality of pipes ( 22 ) open into the process chamber ( 3 ) via a second plurality of gas outlet openings ( 24 ) that are uniformly distributed over the gas outlet surface ( 25 ) of the gas inlet member ( 2 ).

11 . The method of claim 1 , wherein the first and second coatings comprise at least one of graphene, hBN or a transition metal dichalcogenide.

12 . The method of claim 1 , wherein the first reactive gas contains at least one of a hydrocarbon compound or borazine.

13 . The method of claim 1 , wherein the first reactive gas contains a compound of a transition metal.

14 . The method of claim 1 , wherein the second reactive gas contains an element from main group VI, and the inert gas or diluent gas is a noble gas.

15 . (canceled)

16 . The method of claim 1 , wherein the first and second coatings comprise at least one of MoS 2 , WS 2 , MoSe 2 or WSe 2 .

Assignees

• Aixtron Se

Inventors

• Teo Kenneth B K
• Mcaleese Clifford
• Conran Ben Richard

Classifications

• C23C16/45565 Primary

  Shower nozzles · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/45574 Primary

  Nozzles for more than one gas · CPC title

• C23C16/45523 Primary

  Pulsed gas flow or change of composition over time · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title