Organic photodetector and electronic device having the same

Patent metadata

Field	Value
Publication number	US-2022399513-A1
Application number	US-202217828296-A
Country	US
Kind code	A1
Filing date	May 31, 2022
Priority date	Jun 1, 2021
Publication date	Dec 15, 2022
Grant date	—

Abstract

An organic photodetector includes: an anode; a cathode facing the anode; and an active layer disposed between the anode and the cathode and including a first layer and a second layer. The first layer is disposed between the anode and the second layer, the first layer includes a p-type organic semiconductor and an n-type organic semiconductor, and the second layer includes the p-type organic semiconductor.

First claim

What is claimed is:

1 . An organic photodetector comprising:
an anode; a cathode facing the anode; and an active layer disposed between the anode and the cathode, the active layer comprising a first layer and a second layer, wherein: the first layer is disposed between the anode and the second layer, the first layer comprises a p-type organic semiconductor and an n-type organic semiconductor, and the second layer comprises the p-type organic semiconductor.

2 . The organic photodetector of claim 1 , wherein the n-type organic semiconductor has a lowest unoccupied molecular orbital (LUMO) energy level lower than that of the p-type organic semiconductor.

3 . The organic photodetector of claim 1 , wherein a lowest unoccupied molecular orbital (LUMO) energy level of the p-type organic semiconductor is in a range of about −4.0 electron volts (eV) to about −2.9 eV, and a LUMO energy level of the n-type organic semiconductor is in a range of about −4.5 eV to about −3.5 eV.

4 . The organic photodetector of claim 1 , wherein the p-type organic semiconductor comprises boron subphthalocyanine chloride (SubPc), copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), or any combination thereof.

5 . The organic photodetector of claim 1 , wherein the n-type organic semiconductor comprises C60 fullerene, C70 fullerene, or any combination thereof.

6 . The organic photodetector of claim 1 , wherein the first layer comprises a mixed layer of the p-type organic semiconductor and the n-type organic semiconductor.

7 . The organic photodetector of claim 1 , wherein:
the first layer comprises a bilayer comprising a first donor layer and a first acceptor layer, the first acceptor layer is disposed between the first donor layer and the second layer, the first donor layer comprises the p-type organic semiconductor, and the first acceptor layer comprises the n-type organic semiconductor.

8 . The organic photodetector of claim 7 , wherein:
the first donor layer and the first acceptor layer form a PN junction, and the first acceptor layer and the second layer form a PN junction.

9 . The organic photodetector of claim 7 , wherein the p-type organic semiconductor comprised in the first donor layer is substantially identical to the p-type organic semiconductor comprised in the second layer.

10 . The organic photodetector of claim 9 , wherein the p-type organic semiconductor comprises SubPc, CuPc, DBP, or any combination thereof.

11 . The organic photodetector of claim 7 , wherein:
a thickness of the first donor layer is in a range of about 10 Angstroms (Å) to about 1,000 A, a thickness of the first acceptor layer is in a range of about 10 Å to about 1,000 Å, and a thickness of the second layer is in a range of about 5 Å to about 200 Å.

12 . The organic photodetector of claim 1 , further comprising:
a hole transport region disposed between the anode and the active layer; and an electron transport region disposed between the active layer and the cathode, wherein: the hole transport region comprises a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof, and the electron transport region comprises a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

13 . The organic photodetector of claim 12 , wherein:
the hole transport region comprises a hole transport layer, and the electron transport region comprises a buffer layer, a hole blocking layer, an electron transport layer, or any combination thereof.

14 . The organic photodetector of claim 12 , wherein:
the electron transport region comprises a buffer layer, and the buffer layer and the active layer are in direct contact with each other.

15 . The organic photodetector of claim 14 , wherein the p-type organic semiconductor comprised in the second layer has a lowest unoccupied molecular orbital (LUMO) energy level between a LUMO energy level of the n-type organic semiconductor and a LUMO energy level of a material comprised in the buffer layer.

16 . The organic photodetector of claim 1 , wherein a dark current density is about 10 −5 milliamperes per square centimeter (mA/cm 2 ) or lower at a reverse bias of about −3 volts (V).

17 . An electronic apparatus comprising the organic photodetector of claim 1 .

18 . The electronic apparatus of claim 17 , further comprising a light-emitting device.

19 . The electronic apparatus of claim 17 , further comprising a thin-film transistor.

20 . An electronic apparatus comprising:
a substrate comprising a photodetection region and a light-emitting region; an organic photodetector disposed on the photodetection region; and a light-emitting device disposed on the light-emitting region, wherein the organic photodetector comprises:
a first pixel electrode;
a counter electrode facing the first pixel electrode; and
a first common layer, an active layer, and a second common layer sequentially arranged between the first pixel electrode and the counter electrode,
wherein the active layer comprises a first layer and a second layer, the first layer disposed between the first pixel electrode and the second layer, wherein: the first layer comprises a p-type organic semiconductor and an n-type organic semiconductor, and the second layer comprises the p-type organic semiconductor, wherein the light-emitting device comprises:
a second pixel electrode;
a counter electrode facing the second pixel electrode;
and the first common layer, an emission layer, and the second common layer sequentially disposed between the second pixel electrode and the counter electrode, and wherein:
the first pixel electrode and the active layer correspond to the photodetection region, the second pixel electrode and the emission layer correspond to the light-emitting region, and the first common layer, the second common layer, and the counter electrode correspond to the photodetection region and the light-emitting region as a whole.

Assignees

• Samsung Display Co Ltd

Inventors

• Lee Daeho
• Seo Dongkyu
• Shin Junyong
• Yoo Byeongwook
• Yoon Seokgyu
• Lee Byungseol

Classifications

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/0078

  Electricity · mapped topic

• H01L51/0056

  Electricity · mapped topic

• H01L51/008

  Electricity · mapped topic

• H01L51/0046

  Electricity · mapped topic