Ferroelectric memory device and method of forming the same

Patent metadata

Field	Value
Publication number	US-2022384459-A1
Application number	US-202217880803-A
Country	US
Kind code	A1
Filing date	Aug 4, 2022
Priority date	May 28, 2020
Publication date	Dec 1, 2022
Grant date	—

Abstract

Provided is a ferroelectric memory device having a multi-layer stack disposed over a substrate and including a plurality of conductive layers and a plurality of dielectric layers stacked alternately. A channel layer penetrates through the plurality of conductive layers and the plurality of dielectric layers. A plurality of ferroelectric portions are discretely disposed between the channel layer and the plurality of conductive layers. The plurality of ferroelectric portions are vertically separated from one another by one or more non-zero distances.

First claim

What is claimed is:

1 . A ferroelectric memory device, comprising:
a multi-layer stack disposed over a substrate and comprising a plurality of conductive layers and a plurality of dielectric layers stacked alternately; a channel layer penetrating through the plurality of conductive layers and the plurality of dielectric layers; and a plurality of ferroelectric portions discretely disposed between the channel layer and the plurality of conductive layers, wherein the plurality of ferroelectric portions are spaced apart from one another by one or more non-zero distances.

2 . The ferroelectric memory device of claim 1 , wherein the channel layer has an uneven and wavy sidewall profile.

3 . The ferroelectric memory device of claim 1 , wherein the channel layer is in contact with a plurality of top surfaces, a plurality of bottom surfaces, and a plurality of sidewall surfaces of the plurality of ferroelectric portions.

4 . The ferroelectric memory device of claim 3 , wherein the channel layer is further in contact with the plurality of dielectric layers.

5 . The ferroelectric memory device of claim 1 , wherein the plurality of ferroelectric portions have a crystalline structure with an orthorhombic phase of more than 80 mol %.

6 . The ferroelectric memory device of claim 1 , further comprising:
a conductive pillar penetrating through the plurality of conductive layers and the plurality of dielectric layers, wherein the conductive pillar comprises:
a plurality of first portions laterally adjacent to the plurality of dielectric layers; and
a plurality of second portions, laterally adjacent to the plurality of conductive layers, wherein the plurality of first portions and the plurality of second portions have different widths.

7 . The ferroelectric memory device of claim 6 , wherein the channel layer is sandwiched between the plurality of dielectric layers and the plurality of first portions of the conductive pillar, and sandwiched between the plurality of ferroelectric portions and the plurality of second portions of the conductive pillar.

8 . The ferroelectric memory device of claim 7 , wherein the plurality of first portions of the conductive pillar have a first width greater than a second width of the plurality of second portions of the conductive pillar.

9 . A device, comprising:
a semiconductor substrate; a first memory cell over the semiconductor substrate, the first memory cell comprising a first thin film transistor, wherein the first thin film transistor comprises: a first ferroelectric portion on a sidewall of a first conductive line; and a first channel region of a channel layer around a top surface, a sidewall, and a bottom surface of the first ferroelectric portion; a second memory cell over the first memory cell; and a conductive pillar vertically extending along sides of the first memory cell and the second memory cell, wherein the first ferroelectric portion and the first channel region are laterally between the first conductive line and the conductive pillar.

10 . The device of claim 9 , wherein the second memory cell comprises a second thin film transistor, and the second thin film transistor comprises:
a second conductive line located over the first conductive line and separated from the first conductive line by a dielectric layer; a second ferroelectric portion on a sidewall of the second conductive line; and a second channel region of the channel layer around a top surface, a sidewall, and a bottom surface of the second ferroelectric portion.

11 . The device of claim 10 , wherein the channel layer continuously extends to contact the top surfaces, the sidewalls, and the bottom surfaces of the first ferroelectric portion and the second ferroelectric portion.

12 . The device of claim 10 , wherein the conductive pillar comprises:
a first region on a sidewall of the first channel region; and a second region on a sidewall of the second channel region of the channel layer, wherein the first region and the second region have widths less than a width of a third region vertically therebetween.

13 . The device of claim 9 , wherein the first ferroelectric portion has a crystalline structure with an orthorhombic phase of more than 80 mol %.

14 . A ferroelectric memory device, comprising:
a plurality of conductive lines vertically stacked over a substrate; a plurality of dielectric layers vertically interleaved between the plurality of conductive lines; a plurality of ferroelectric portions arranged on sidewalls of the plurality of conductive lines; a channel layer extending through the plurality of conductive lines and the plurality of dielectric layers, wherein the channel layer is laterally separated from the plurality of conductive lines by the plurality of ferroelectric portions; and wherein the plurality of ferroelectric portions are vertically separated from one another by the channel layer.

15 . The ferroelectric memory device of claim 14 , wherein the channel layer contacts sidewalls, upper surfaces, and lower surfaces of the plurality of ferroelectric portions.

16 . The ferroelectric memory device of claim 14 , further comprising:
a conductive pillar vertically extending along a side of the channel layer, wherein the conductive pillar comprises one or more protrusions that extend outward from a sidewall of the conducive pillar to directly between an upper surface and a lower surface of the channel layer.

17 . The ferroelectric memory device of claim 14 , wherein the plurality of ferroelectric portions have first sidewalls facing the plurality of conductive lines and the channel layer has second sidewalls facing the plurality of dielectric layers, the first sidewalls aligned with the second sidewalls along a vertically extending line.

18 . The ferroelectric memory device of claim 14 , wherein the plurality of ferroelectric portions respectively comprise opposing outermost sidewalls that are laterally and completely confined between the plurality of conductive lines and the channel layer.

19 . The ferroelectric memory device of claim 14 , wherein the plurality of ferroelectric portions respectively comprise a first outermost sidewall contacting one of the plurality of conductive lines and an opposing second outermost sidewall contacting the channel layer.

20 . The ferroelectric memory device of claim 14 ,
wherein the plurality of conductive lines comprise a first conductive line and a second conductive line over the first conductive line; and wherein the plurality of ferroelectric portions comprise a first ferroelectric portion on a sidewall of the first conductive line and a second ferroelectric portion on a sidewall of the second conductive line, the first ferroelectric portion being separated from the second ferroelectric portion by the channel layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lu Chun-Chieh
• Chia Han-Jong
• Yeong Sai-Hooi
• Young Bo-Feng
• Lin Yu-Ming

Classifications

• H01L29/78696

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic

• H01L29/66969

  Electricity · mapped topic

• H01L27/11597

  Electricity · mapped topic

• H01L27/1159 Primary

  Electricity · mapped topic