Bias circuit and amplifier

US2022360234A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022360234-A1
Application numberUS-202217866830-A
CountryUS
Kind codeA1
Filing dateJul 18, 2022
Priority dateMar 10, 2020
Publication dateNov 10, 2022
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A signal to be amplified is applied to a gate terminal of an amplifier element that amplifies the signal and that is a transistor, the bias circuit includes: a switching element having a first terminal and a second terminal, the first terminal being electrically connected to the gate terminal; and a trap compensation element having a third terminal and a fourth terminal, the third terminal being connected to the second terminal. Further, the bias circuit includes a control circuit to apply a bias voltage to the gate terminal. Further, the bias circuit includes a voltage application circuit to apply a first voltage to the fourth terminal when the signal to be amplified is a transmission signal, and apply a second voltage to the fourth terminal when the signal to be amplified is a reception signal, the second voltage being a negative voltage.

First claim

Opening claim text (preview).

What is claimed is: 1 . A bias circuit in which a signal to be amplified is applied to a gate terminal of an amplifier element that amplifies the signal and that is a transistor, the bias circuit comprises: a switching element having a first terminal and a second terminal, the first terminal being electrically connected to the gate terminal; a trap compensation element having a third terminal and a fourth terminal, the third terminal being connected to the second terminal; a control circuit to apply a bias voltage to the gate terminal, wherein when the signal to be amplified is a transmission signal, the control circuit performs control to cause the switching element to be in an open state and control to cause the third terminal and the fourth terminal in the trap compensation element to be in a non-conductive state in which the third terminal and the fourth terminal are electrically disconnected from each other, and when the signal to be amplified is a reception signal, the control circuit performs control to cause the switching element to be in a closed state and control to cause the third terminal and the fourth terminal to be in a conductive state in which the third terminal and the fourth terminal are electrically connected to each other; and a voltage application circuit to apply a first voltage to the fourth terminal when the signal to be amplified is a transmission signal, and apply a second voltage to the fourth terminal when the signal to be amplified is a reception signal, the second signal being a negative voltage. 2 . The bias circuit according to claim 1 , wherein the amplifier element is a transistor including a crystal defect, wherein when the signal to be amplified is a transmission signal, the voltage application circuit charges electrons to the crystal defect included in the trap compensation element by applying the first voltage to the fourth terminal. 3 . The bias circuit according to claim 1 , wherein the bias circuit uses a field effect transistor as the switching element, and a source terminal of the field effect transistor is the first terminal of the switching element, and a drain terminal of the field effect transistor is the second terminal of the switching element. 4 . The bias circuit according to claim 1 , wherein the bias circuit uses a diode as the switching element, and an anode terminal of the diode is the first terminal of the switching element, and a cathode terminal of the diode is the second terminal of the switching element. 5 . The bias circuit according to claim 4 , wherein a Schottky barrier metal forming the anode terminal of the diode is a metal having a lower work function than a Schottky barrier metal forming the gate terminal of the amplifier element. 6 . The bias circuit according to claim 1 , wherein the bias circuit uses a switch as the switching element. 7 . The bias circuit according to claim 1 , wherein the bias circuit uses, as the voltage application circuit, a power supply to apply either the first voltage or the second voltage to the fourth terminal of the trap compensation element. 8 . The bias circuit according to claim 1 , wherein the bias circuit uses, as the voltage application circuit, a negative feedback amplifier to invert a control voltage output from the control circuit to the trap compensation element and apply a voltage obtained by amplifying the inverted control voltage to the fourth terminal of the trap compensation element as the first voltage or the second voltage in order to control a state of the trap compensation element to either a non-conductive state or a conductive state. 9 . The bias circuit according to claim 1 , wherein each of the amplifier element, the switching element, and the trap compensation element is a gallium nitride transistor. 10 . A bias circuit in which a signal to be amplified is applied to a gate terminal of an amplifier element that amplifies the signal and that is a transistor, the bias circuit comprises: a switching element having a first terminal and a second terminal, the first terminal being electrically connected to the gate terminal; a trap compensation element having a third terminal, a fourth terminal, and a control terminal, the third terminal being connected to the second terminal; a control circuit to apply a bias voltage to the gate terminal, wherein when the signal to be amplified is a transmission signal, the control circuit performs control to cause the switching element to be in an open state, and when the signal to be amplified is a reception signal, the control circuit performs control to cause the switching element to be in a closed state; and a voltage application circuit to apply, when the signal to be amplified is a transmission signal, a first voltage corresponding to a power level of the transmission signal to the fourth terminal of the trap compensation element and apply a second voltage to the control terminal of the trap compensation element, and perform control to cause the third terminal and the fourth terminal in the trap compensation element to be in a non-conductive state in which the third terminal and the fourth terminal are electrically disconnected from each other, and to perform, when the signal to be amplified is a reception signal, control to cause the third terminal and the fourth terminal to be in a conductive state in which the third terminal and the fourth terminal are electrically connected to each other. 11 . A bias circuit in which a signal to be amplified is applied to a gate terminal of an amplifier element that amplifies the signal and that is a transistor, the bias circuit comprises: a switching element having a first terminal and a second terminal, the first terminal being electrically connected to the gate terminal; a trap compensation element having a third terminal, a fourth terminal, and a control terminal, the third terminal being connected to the second terminal; and a control circuit to apply a bias voltage to the gate terminal, wherein when the signal to be amplified is a transmission signal, the control circuit performs control to cause the switching element to be in an open state, and perform control to apply a first voltage corresponding to a power level of the transmission signal to the fourth terminal of the trap compensation element and apply a second voltage to the control terminal of the trap compensation element, and cause the third terminal and the fourth terminal in the trap compensation element to be in a non-conductive state in which the third terminal and the fourth terminal are electrically disconnected from each other, and when the signal to be amplified is a reception signal, the control circuit performs control to cause the switching element to be in a closed state and control to cause the third terminal and the fourth terminal to be in a conductive state in which the third terminal and the fourth terminal are electrically connected to each other. 12 . The bias circuit according to claim 10 , wherein the signal to be amplified is a modulation wave input signal. 13 . The bias circuit according to claim 10 , wherein in place of the voltage application circuit, the bias circuit uses: a first digital signal source to control, when the signal to be amplified is a transmission signal, the first voltage to be applied to the fourth terminal of the trap compensation element by a digital signal in accordance with a power level of the transmission signal; and a second digital signal source to control, when the signal to be amplified is a transmission signal, the second voltage to be applied to the control terminal of the trap compensation element by a di

Assignees

Inventors

Classifications

  • H03F3/245Primary

    with semiconductor devices only · CPC title

  • by using a signal derived from the input signal · CPC title

  • with field-effect devices (H03F3/2173 - H03F3/2178 take precedence) · CPC title

  • with field-effect devices (H03F3/195 takes precedence) · CPC title

  • the amplifier being a radio frequency amplifier · CPC title

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Frequently asked questions

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What does patent US2022360234A1 cover?
A signal to be amplified is applied to a gate terminal of an amplifier element that amplifies the signal and that is a transistor, the bias circuit includes: a switching element having a first terminal and a second terminal, the first terminal being electrically connected to the gate terminal; and a trap compensation element having a third terminal and a fourth terminal, the third terminal bein…
Who is the assignee on this patent?
Mitsubishi Electric Corp
What technology area does this patent fall under?
Primary CPC classification H03F3/245. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Nov 10 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).