Semiconductor device and light-emitting system

Patent metadata

Field	Value
Publication number	US-2022359793-A1
Application number	US-202217814259-A
Country	US
Kind code	A1
Filing date	Jul 22, 2022
Priority date	Nov 13, 2017
Publication date	Nov 10, 2022
Grant date	—

Abstract

A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a semiconductor layered structure; an electrode unit disposed on an electrode connecting region of said semiconductor layered structure, said electrode unit being a multi-layered structure; and an anti-adsorption layer disposed on a top surface of said electrode unit opposite to said semiconductor layered structure.

2 . The semiconductor device as claimed in claim 1 , wherein said electrode unit includes a metal contacting layer, a metal separation layer, and a metal surface layer which are sequentially formed on said electrode connecting region of said semiconductor layered structure in such order.

3 . The semiconductor device as claimed in claim 2 , wherein said electrode unit further includes a metal reflective layer disposed between said metal contacting layer and said metal separation layer.

4 . The semiconductor device as claimed in claim 2 , wherein said electrode unit further includes a metal reflective layer disposed between said metal separation layer and said metal surface layer.

5 . The semiconductor device as claimed in claim 2 , wherein said metal contacting layer of said multi-layered structure is made of a material selected from the group consisting of chromium (Cr), titanium (Ti), and tin (Sn).

6 . The semiconductor device as claimed in claim 2 , wherein said metal separation layer is made of a material selected from the group consisting of titanium (Ti), platinum (Pt), nickel (Ni), cobalt (Co), palladium (Pd), and tungsten (W).

7 . The semiconductor device as claimed in claim 2 , wherein said metal surface layer is made of a material selected from the group consisting of gold (Au) and aluminum (Al).

8 . The semiconductor device as claimed in claim 2 , wherein said metal contacting layer is made of Cr, said metal separation layer is made of Pt, and said metal surface layer is made of Au.

9 . The semiconductor device as claimed in claim 1 , wherein said anti-adsorption layer has an adsorption capacity for aerosol which is lower than that of said electrode unit.

10 . The semiconductor device as claimed in claim 1 , wherein said anti-adsorption layer has a thickness that is greater than 0 nm and not greater than 100 nm.

11 . The semiconductor device as claimed in claim 1 , wherein said anti-adsorption layer is made of a metallic material selected from the group consisting of platinum (Pt), iridium (Ir), nickel (Ni), copper (Cu), and an alloy thereof.

12 . The semiconductor device as claimed in claim 1 , further comprising an adsorption layer disposed on a non-electrode connecting region of said semiconductor layered structure different in location from said electrode connecting region of said semiconductor layered structure.

13 . The semiconductor device as claimed in claim 12 , wherein said adsorption layer is electrically connected to said electrode unit for serving as a finger of said electrode unit.

14 . The semiconductor device as claimed in claim 12 , wherein said adsorption layer has a thickness that ranges from 1 nm to 100 nm.

15 . The semiconductor device as claimed in claim 12 , wherein said non-electrode connecting region includes a side surface of said semiconductor layered structure.

16 . The semiconductor device as claimed in claim 12 , wherein said adsorption layer and said electrode unit are spaced apart by a distance of not greater than 300 mm.

17 . The semiconductor device as claimed in claim 12 , wherein said adsorption layer is made of a material selected from the group consisting of a metallic material, a nano metal oxide material, graphene, activated carbon, porous ceramic, and combinations thereof.

18 . The semiconductor device as claimed in claim 17 , wherein said metallic material of said adsorption layer is selected from the group consisting of Pd, LaNi 5 , NdNi 5 , CaNi 5 , TiNi 5 , LaAl 5 , LaFe 5 , LaCr 5 , LaCu 5 , LaSi 5 , LaSn 5 , FeTi, MnTi, CrTi, TiCu, MgZn 2 , NiMg 2 , ZrCr 2 , ZrMn 2 , and combinations thereof.

19 . The semiconductor device as claimed in claim 17 , wherein said nano metal oxide material of said adsorption layer is selected from the group consisting of ZrO 2 , CuO, TiO 2 , Al 2 O 3 , and combinations thereof.

20 . A light-emitting system including at least one semiconductor device as claimed in claim 1 .

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Chen Gong
• Liu chuan-gui
• Chen Ting-Yu
• Lin Su-Hui
• Hong ling-yuan
• Hsu Sheng-Hsien
• Peng Kang-Wei
• Chang Chia-Hung

Classifications

• H01L33/0095

  Electricity · mapped topic

• H01L33/02

  Electricity · mapped topic

• H01L33/44 Primary

  Electricity · mapped topic

• H01L33/385

  Electricity · mapped topic

• H01L33/36

  Electricity · mapped topic