Plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-2022359172-A1
Application number	US-202217866687-A
Country	US
Kind code	A1
Filing date	Jul 18, 2022
Priority date	Dec 16, 2014
Publication date	Nov 10, 2022
Grant date	—

Abstract

Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

First claim

1 . A plasma processing apparatus comprising:
a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus further including a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample on the basis of a temperature of the sample stage or a difference of temperatures within the sample stage in the absence of the plasma.

2 . A plasma processing apparatus comprising:
a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, wherein the apparatus further includes a control apparatus for controlling the DC power supply, when no plasma exists and the sample stage has a plurality of regions each of which is controlled to a different temperature, so as to apply such DC voltages as to decrease the absolute value of the potential of the sample on the basis of the different temperatures of the plurality of regions.

3 . A plasma processing apparatus comprising:
a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, wherein the apparatus further includes a control apparatus for controlling the DC power supply, when no plasma exists and a first temperature of the sample stage in a step constituting plasma treatment conditions differs from a second temperature of the sample stage in a step following the plasma treatment step, so as to apply such DC voltages as to decrease the absolute value of the potential of the sample on the basis of the first temperature and the second temperature.

4 . The plasma processing apparatus according to claim 2 ,
wherein if a first temperature of the sample stage in a step constituting plasma treatment conditions differs from a second temperature of the sample stage in a step following the plasma treatment step, the control apparatus controls the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample on the basis of the first temperature and the second temperature.

5 . A plasma processing apparatus comprising:
a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, wherein the apparatus further includes a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease an absolute value of the potential of the sample on the basis of a monitored value of the temperature of the sample stage in the absence of plasma.

6 . (canceled)

7 . A plasma processing apparatus comprising;
a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and a mounting section comprising a dielectric layer and mounted with the sample, the sample stage being temperature-controlled by coolant; a DC power supply for applying DC voltages to the electrodes, wherein the apparatus further includes a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease an absolute value of the potential of the sample is temperature controlled on the basis of data on a temperature dependence of a resistance of the dielectric layer and a temperature of the coolant in the absence of plasma.

8 . The plasma processing apparatus according to claim 5 , wherein
the sample stage further includes a mounting section comprising a dielectric layer and mounted with the sample, a monitored value of the temperature of the sample stage is detected by a temperature monitor arranged in the sample stage, and the control apparatus further controls the DC voltages so as to supply such DC voltages as to decrease the absolute value of the potential of the sample on the basis of data on the temperature dependence of the resistance of the dielectric layer.

Assignees

• Hitachi High Tech Corp

Inventors

• Ikenaga Kazuyuki
• Ishiguro Masaki
• Sumiya Masahiro
• Shirayone Shigeru

Classifications

• H01J37/32577

  Electrical connecting means · CPC title

• H01J37/32724

  Temperature · CPC title

• H01J37/32697

  Electrostatic control · CPC title

• H01J37/32715 Primary

  Workpiece holder · CPC title

• H01J37/32706

  Polarising the substrate · CPC title