Method for producing crystal
US-2017342592-A1 · Nov 30, 2017 · US
US2022349086A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022349086-A1 |
| Application number | US-202017762101-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 15, 2020 |
| Priority date | Oct 10, 2019 |
| Publication date | Nov 3, 2022 |
| Grant date | — |
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An apparatus is configured to pull a single crystal of semiconductor material from a melt contained in a crucible. The apparatus includes: a rotatable pulling shaft; a rotatable crucible shaft; a double worm gear between a drive and the pulling shaft; and a further double worm gear between a further drive and the crucible shaft.
Opening claim text (preview).
1 . An apparatus for pulling a single crystal of semiconductor material from a melt contained in a crucible, having the apparatus comprising: a rotatable pulling shaft; a rotatable crucible shaft; a double worm gear between a drive and the pulling shaft; and a further double worm gear between a further drive and the crucible shaft. 2 . The apparatus according to claim 1 , the apparatus comprising a bellows coupling between an upper portion and a lower portion of the pulling shaft. 3 . The apparatus according to claim 1 . the apparatus comprising a bellows coupling between an upper portion and a lower portion of the crucible shaft. 4 . The apparatus according to claim 1 , wherein a driveshaft of the drive is arranged parallel to the pulling shaft. 5 . The apparatus according to claim 1 , wherein the drive is mounted rigidly on a housing plate of the double worm gear. 6 . The apparatus according to claim 1 , wherein a further driveshaft of the further drive is arranged parallel to the crucible shaft. 7 . The apparatus according to claim 1 , wherein the further drive is mounted rigidly on a further housing plate of the further double worm gear. 8 . A method for pulling the single crystal of semiconductor material from the melt by the Czochralski (CZ) method, the method comprising pulling the single crystal of semiconductor material using the apparatus according to claim 1 .
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