Method of forming perovskite thin film and light-emitting device including layer manufactured thereby

Patent metadata

Field	Value
Publication number	US-2022344591-A1
Application number	US-202117506448-A
Country	US
Kind code	A1
Filing date	Oct 20, 2021
Priority date	Apr 8, 2021
Publication date	Oct 27, 2022
Grant date	—

Abstract

A method of forming a perovskite thin film and a light-emitting device including a layer manufactured by the method.

First claim

What is claimed is:

1 . A method of forming a perovskite thin film, the method comprising:
preparing a substrate; spraying a first solution of a first perovskite compound precursor through an inner nozzle of a dual nozzle including the inner nozzle and an outer nozzle; spraying a second solution of a second perovskite compound precursor through the outer nozzle; forming a perovskite compound solution by reacting the first solution of the first perovskite compound precursor and the second solution of the second perovskite compound precursor; forming a membrane on the substrate from the perovskite compound solution; and evaporating a solvent of the perovskite compound solution from the membrane on the substrate.

2 . The method of forming a perovskite thin film of claim 1 , wherein the perovskite compound is a non-lead-based perovskite compound.

3 . The method of forming a perovskite thin film of claim 1 , wherein the spraying of the first solution of the first perovskite compound precursor and the spraying of the second solution of the second perovskite compound precursor are performed simultaneously.

4 . The method of forming a perovskite thin film of claim 1 , wherein a voltage difference exists between the substrate and the dual nozzle by application of an electric field.

5 . The method of forming a perovskite thin film of claim 4 , wherein the voltage difference is 50 keV or less.

6 . The method of forming a perovskite thin film of claim 1 , wherein the first perovskite compound precursor is a first metal halogen compound, the second perovskite compound precursor is a second metal halogen compound, and
the first metal halogen compound and the second metal halogen compound are different metal halogen compounds.

7 . The method of forming a perovskite thin film of claim 1 , wherein the first perovskite compound precursor is represented by Formula 1:
A α A′ α ′X  Formula 1
wherein, in Formula 1, A and A′ each independently represent an alkali metal, an alkaline earth metal, or a lanthanide metal, X represents a halogen, and α and α′ each independently represent a number from 0 to 1.

8 . The method of forming a perovskite thin film of claim 1 , wherein the second perovskite compound precursor is represented by Formula 2:
B β B′ β ′X  Formula 2
wherein, in Formula 1, B and B′ each independently represent a transition metal or a post transition metal, X represents a halogen, and β and β′ each independently represent a number from 0 to 1.

9 . The method of forming a perovskite thin film of claim 1 , wherein the perovskite compound is represented by Formula 3:
A α A′ α ′B β B′ β ′X γ   Formula 3
in Formula 3, A, A′, α, and α′ are as defined in Formula 1, B, B′, β, and β′ are as defined in Formula 2, X represents a halogen, and γ represents a number from 1 to 9.

10 . The method of forming a perovskite thin film of claim 1 , wherein the first solution includes the first solvent, the second solution includes the second solvent, and the first solvent and the second solvent are organic solvents.

11 . The method of forming a perovskite thin film of claim 10 , wherein the organic solvent has a boiling point of about 110° C. to about 200° C.

12 . The method of forming a perovskite thin film of claim 10 , wherein the first solvent and the second solvent are identical organic solvents.

13 . The method of forming a perovskite thin film of claim 10 , wherein the organic solvent is dimethylformamide (DMF), dimethyl sulfoxide (DMSO), o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, or any combination thereof.

14 . The method of forming a perovskite thin film of claim 1 , wherein a temperature of the first solution is about 15° C. to about 200° C.

15 . The method of forming a perovskite thin film of claim 1 , wherein a temperature of the second solution is about 15° C. to about 200° C.

16 . The method of forming a perovskite thin film of claim 1 , wherein a concentration of the first solution is about 0.01 M to about 1.0 M.

17 . The method of forming a perovskite thin film of claim 1 , wherein a concentration of the second solution is about 0.01 M to about 1.0 M.

18 . The method of forming a perovskite thin film of claim 1 , wherein a temperature of the substrate is 200° C. or less.

19 . A light-emitting device comprising:
a first electrode; a second electrode facing the first electrode; and an interlayer located between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes a layer manufactured by a method of forming a perovskite thin film, the method including: preparing a substrate; spraying a first solution of a first perovskite compound precursor through an inner nozzle of a dual nozzle including the inner nozzle and an outer nozzle; spraying a second solution of a second perovskite compound precursor through the outer nozzle; forming a perovskite compound solution by reacting the first solution of the first perovskite compound precursor and the second solution of the second perovskite compound precursor; forming a membrane on the substrate from the perovskite compound solution; and evaporating a solvent of the perovskite compound solution from the membrane on the substrate.

20 . The light-emitting device of claim 19 , wherein the layer manufactured by the method of forming a perovskite thin film is a hole injection layer, a hole transport layer, a buffer layer, an emission layer, or an electron transport layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Ka Yoonseok
• Kim Dongchan
• Moon Jiyoung
• Yoon Heechang

Classifications

• C09K11/616 Primary

  with alkali or alkaline earth metals · CPC title

• H01L51/0007 Primary

  Electricity · mapped topic

• H01L51/5072

  Electricity · mapped topic

• H10K85/50 Primary

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K71/441

  in the presence of solvent vapors, e.g. solvent vapour annealing · CPC title