Semiconductor device and method manufacturing the same
US-2018166540-A1 · Jun 14, 2018 · US
Schottky barrier diode and method for manufacturing the same
US2022285485A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022285485-A1 |
| Application number | US-202117317576-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 11, 2021 |
| Priority date | Mar 4, 2021 |
| Publication date | Sep 8, 2022 |
| Grant date | — |
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Abstract
Official abstract text for this publication.
A Schottky barrier diode is provided. The Schottky barrier diode includes: an n+ type of substrate, an n− type of epitaxy layer disposed on a first surface of the n+ type of substrate and having a trench opened to an opposite side of a surface facing the substrate, a p type of region disposed on a side surface of the trench, a Schottky electrode disposed on the n− type of epitaxy layer and within the trench, and an ohmic electrode disposed on a second surface of the n+ type of substrate.
First claim
Opening claim text (preview).
What is claimed is: 1 . A Schottky barrier diode, comprising: an n+ type of substrate; an n− type of epitaxy layer disposed on a first surface of the n+ type of substrate and having a trench opened to an opposite side of a surface facing the substrate; a p type of region disposed on a side surface of the trench; a Schottky electrode disposed on the n− type of epitaxy layer and within the trench; and an ohmic electrode disposed on a second surface of the n+ type of substrate. 2 . The Schottky barrier diode of claim 1 , wherein: the p type of region extends from the side surface of the trench to a bottom surface of the trench to surround a corner at which the side surface and the bottom surface meet. 3 . The Schottky barrier diode of claim 1 , wherein: a first distance between the p-type of regions in the bottom surface of the trench is shorter than or equal to a second distance between the p type of regions disposed on the side surfaces of the trenches adjacent to each other. 4 . The Schottky barrier diode of claim 3 , wherein: the first distance divided by the second distance is a value equal to or less than 1. 5 . A manufacturing method of a Schottky barrier diode, comprising: forming an n− type of epitaxy layer on a first surface of an n+ type of substrate; etching the n− type of epitaxy layer to form a trench; forming a p type of region on a side surface of the trench; forming a Schottky electrode on the n− type of epitaxy layer and within the trench; and forming an ohmic electrode on a second surface of the n+ type of substrate. 6 . The manufacturing method of the Schottky barrier diode of claim 5 , wherein forming the p type of region comprises: forming the p type of region by using a tilt ion injection. 7 . The manufacturing method of the Schottky barrier diode of claim 5 , wherein forming the p type of region comprises: forming the p type of region up to a corner at which the side surface and a bottom surface of the trench meet.
Assignees
Inventors
Classifications
to silicon carbide · CPC title
- H10D8/60Primary
Schottky-barrier diodes · CPC title
Silicon carbide · CPC title
of Schottky diodes · CPC title
Electrodes comprising a Schottky barrier to a semiconductor · CPC title
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- What does patent US2022285485A1 cover?
- A Schottky barrier diode is provided. The Schottky barrier diode includes: an n+ type of substrate, an n− type of epitaxy layer disposed on a first surface of the n+ type of substrate and having a trench opened to an opposite side of a surface facing the substrate, a p type of region disposed on a side surface of the trench, a Schottky electrode disposed on the n− type of epitaxy layer and with…
- Who is the assignee on this patent?
- Hyundai Motor Co Ltd, Kia Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D8/60. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 08 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).