Method for preparing thin film piezoresistive material, thin film piezoresistive material, robot and device

US2022275220A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022275220-A1
Application numberUS-202217747911-A
CountryUS
Kind codeA1
Filing dateMay 18, 2022
Priority dateMar 16, 2020
Publication dateSep 1, 2022
Grant date

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  5. First independent claim

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Abstract

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Embodiments of this application provide a method for preparing a thin film piezoresistive material, a thin film piezoresistive material, a robot, and a device. The method includes: determining a mass ratio of conductive particles to a cross-linked polymer in preparation of the thin film piezoresistive material, a value range of the mass ratio being 3:97 to 20:80; dispersing the conductive particles and the cross-linked polymer in a solvent according to the mass ratio, to obtain a first dispersion; and curing the first dispersion by using a liquid dropping method within a temperature range of 25° C. to 200° C., to obtain the thin film piezoresistive material. The technical solutions provided by the embodiments of this application provide a method for preparing a thin film piezoresistive material through liquid dropping, thereby effectively controlling the thickness of the piezoresistive material, so that the prepared thin film piezoresistive material has a relatively small thickness.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method for preparing a thin film piezoresistive material, comprising: determining a mass ratio of conductive particles to a cross-linked polymer in preparation of the thin film piezoresistive material, a value range of the mass ratio being 3:97 to 20:80; dispersing the conductive particles and the cross-linked polymer in a solvent according to the mass ratio, to obtain a first dispersion; and curing the first dispersion by using a liquid dropping method within a temperature range of 25° C. to 200° C., to obtain the thin film piezoresistive material. 2 . The method according to claim 1 , wherein the curing the first dispersion by using a liquid dropping method within a temperature range of 25° C. to 200° C., to obtain the thin film piezoresistive material comprises: mixing a first solvent and the first dispersion according to a required first viscosity, to obtain a pre-curing agent of the first viscosity; determining a first dosage of the pre-curing agent according to a concentration of the conductive particles and a concentration of the cross-linked polymer in the pre-curing agent, and a required size of the thin film piezoresistive material; taking the first dosage of the pre-curing agent; and dropping the first dosage of the pre-curing agent on a curing area of a substrate for curing to obtain the thin film piezoresistive material, a temperature range of the substrate being 25° C. to 200° C. 3 . The method according to claim 2 , wherein before the dropping the first dosage of the pre-curing agent on a curing area of a substrate for curing to obtain the thin film piezoresistive material, the method further comprises: adjusting a heating plate until a top surface of the heating plate is parallel to a horizontal surface; placing the substrate on the top surface of the heating plate; and keeping a temperature of the heating plate and the substrate in the range of 25° C. to 200° C. 4 . The method according to claim 1 , wherein the conductive particles comprise at least one of the following: multi-walled carbon nanotubes, graphene, or conductive metal nanoparticles. 5 . The method according to claim 1 , wherein the dispersing the conductive particles and the cross-linked polymer in a solvent according to the mass ratio, to obtain a first dispersion comprises: dispersing the conductive particles in a second solvent, to obtain a second dispersion; dispersing the cross-linked polymer in a third solvent, to obtain a third dispersion; and mixing the second dispersion and the third dispersion according to the mass ratio, to obtain the first dispersion. 6 . The method according to claim 5 , wherein the dispersing the conductive particles in a second solvent, to obtain a second dispersion comprises: adding the conductive particles into the second solvent; and dispersing the conductive particles in the second solvent by using a dispersion apparatus, to obtain the second dispersion. 7 . The method according to claim 6 , wherein the dispersion apparatus comprises at least one of the following: an ultrasonic dispersion apparatus and a vacuum dispersion machine. 8 . The method according to claim 5 , wherein the conductive particles comprise the multi-walled carbon nanotubes, and the second solvent comprises N-Methyl pyrrolidone; and a concentration of the multi-walled carbon nanotubes in the second dispersion is greater than or equal to 0.1%, and less than or equal to 10%. 9 . The method according to claim 5 , wherein the dispersing the cross-linked polymer in a third solvent, to obtain a third dispersion comprises: adding the cross-linked polymer into the third solvent; and dispersing the cross-linked polymer in the third solvent by using a first stirring apparatus, to obtain the third dispersion. 10 . The method according to claim 5 , wherein the cross-linked polymer comprises thermoplastic polyurethane, and the third solvent comprises an N, N-dimethyl formamide solution; and in the third dispersion, a mass ratio of the thermoplastic polyurethane to the N, N-dimethyl formamide solution is 1:2 to 1:50. 11 . The method according to claim 1 , wherein the cross-linked polymer comprises at least one of the following: thermoplastic polyurethane and epoxy. 12 . A thin film piezoresistive material, prepared using the method according to claim 1 . 13 . A robot skin, comprising a thin film piezoresistive material prepared using the method according to claim 1 . 14 . A robot, comprising a robot skin, the robot skin comprising a thin film piezoresistive material prepared using the method according to claim 1 . 15 . An electronic device, comprising an electronic circuit, the electronic circuit comprising a thin film piezoresistive material prepared using the method according to claim 1 .

Assignees

Inventors

Classifications

  • Tactile sensors (in general G01L5/16, G01L5/22) · CPC title

  • Piezoresistive or piezoelectric sensing devices · CPC title

  • Sensor, tactile feedback, operator feels forces of tool on workpiece · CPC title

  • characterised by use of sensors other than normal servo-feedback from position, speed or acceleration sensors, perception control, multi-sensor controlled systems, sensor fusion · CPC title

  • Avoiding collision or forbidden zones · CPC title

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What does patent US2022275220A1 cover?
Embodiments of this application provide a method for preparing a thin film piezoresistive material, a thin film piezoresistive material, a robot, and a device. The method includes: determining a mass ratio of conductive particles to a cross-linked polymer in preparation of the thin film piezoresistive material, a value range of the mass ratio being 3:97 to 20:80; dispersing the conductive parti…
Who is the assignee on this patent?
Univ Tsinghua, Tencent Tech Shenzhen Co Ltd
What technology area does this patent fall under?
Primary CPC classification C09D5/24. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Sep 01 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).