Optoelectronic device comprising perovskites

Patent metadata

Field	Value
Publication number	US-2022262963-A1
Application number	US-202217653789-A
Country	US
Kind code	A1
Filing date	Mar 7, 2022
Priority date	May 18, 2012
Publication date	Aug 18, 2022
Grant date	—

Abstract

The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

First claim

1 - 103 . (canceled)

104 . An optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite, wherein the porous material comprises:
(a) a porous semiconductor which is a porous perovskite wherein the perovskite comprises at least one halide anion; or (b) a porous dielectric scaffold material and a coating disposed on the surface of said porous dielectric scaffold material, which coating comprises a semiconductor comprising a perovskite, wherein the perovskite comprises at least one halide anion.

105 . An optoelectronic device according to claim 104 wherein the porous material comprises:
(a) said porous semiconductor which is said porous perovskite.

106 . An optoelectronic device according to claim 104 wherein the porous material comprises:
(b) said porous dielectric scaffold material and said coating disposed on the surface of said porous dielectric scaffold material.

107 . An optoelectronic device according to claim 104 wherein the dielectric scaffold material has a band gap of equal to or greater than 4.0 eV.

108 . An optoelectronic device according to claim 104 wherein the porous material:
(a) consists of said porous semiconductor which is a porous perovskite wherein the perovskite comprises at least one halide anion; or
(b) comprises said porous dielectric scaffold which consists of material having a band gap of equal to or greater than 4.0 eV and said coating disposed on the surface of said porous dielectric scaffold material, which coating comprises said semiconductor comprising a perovskite, wherein the perovskite comprises at least one halide anion.

109 . An optoelectronic device according to claim 108 wherein the porous material:
(a) consists of said porous semiconductor which is a porous perovskite, wherein the perovskite comprises at least one halide anion.

110 . An optoelectronic device according to claim 104 which further comprises a charge transporting material disposed within pores of said porous material, wherein the charge transporting material is a hole transporting material or an electron transporting material.

111 . An optoelectronic device according to claim 104 wherein the porous material is mesoporous.

112 . An optoelectronic device according to claim 104 wherein the porosity of said porous material is equal to or greater than 50%.

113 . An optoelectronic device according to claim 108 wherein the porous material:
(b) comprises said porous dielectric scaffold which consists of material having a band gap of equal to or greater than 4.0 eV and said coating disposed on the surface of said porous dielectric scaffold material, which coating comprises said semiconductor comprising a perovskite, wherein the perovskite comprises at least one halide anion.

114 . An optoelectronic device according to claim 104 wherein the porous dielectric scaffold material comprises an oxide of aluminium, zirconium, silicon, yttrium or ytterbium; or alumina silicate.

115 . An optoelectronic device according to claim 104 wherein the porous dielectric scaffold material comprises porous alumina.

116 . An optoelectronic device according to claim 104 wherein the perovskite comprises a first cation which is an organic cation, a second cation which is a metal cation, and at least one anion selected from halide anions.

117 . An optoelectronic device according to claim 116 wherein the metal cation is selected from Sn 2+ and Pb 2+ , and the organic cation has the formula (R 1 R 2 R 3 R 4 N) + or (R 5 R 6 N═CH—NR 7 R 8 ) + , wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 is independently selected from hydrogen, unsubstituted or substituted C 1 -C 20 alkyl, and unsubstituted or substituted aryl.

118 . An optoelectronic device according to claim 104 wherein said device is selected from a light emitting device; a light emitting diode; a photodiode; a phototransistor; a photomultiplier; a photo resistor; a photo detector; a light-sensitive detector; solid-state triode; a battery electrode; a transistor; a laser; and a diode injection laser.

119 . An optoelectronic device according to claim 104 wherein said device is a light emitting device.

120 . An optoelectronic device according to claim 104 wherein said device is a light emitting diode, a laser, or a diode injection laser.

121 . An optoelectronic device according to claim 104 comprising:
a first electrode;
a second electrode; and, disposed between the first and second electrodes:
(a) a photoactive layer, wherein the photoactive layer comprises said porous material and a charge transporting material disposed within pores of said porous material, which charge transporting material is a solid state hole transporting material, and wherein the porous material consists of a porous semiconductor which is a porous perovskite wherein the perovskite comprises at least one halide anion; and
(b) a compact layer comprising a metal oxide or a metal chalcogenide.

122 . An optoelectronic device according to claim 104 wherein the porous material consists of said porous semiconductor which is a porous perovskite, wherein the perovskite comprises at least one halide anion, and wherein the perovskite is not supported on another porous material, and wherein the optoelectronic device further comprises a charge transporting material disposed within pores of said porous material, wherein the charge transporting material is an organic electron transporting material.

123 . A photoactive layer for an optoelectronic device, which photoactive layer comprises a porous material, which porous material comprises a semiconductor comprising a perovskite, wherein the porous material comprises:
(a) a porous semiconductor which is a porous perovskite wherein the perovskite comprises at least one halide anion; or (b) a porous dielectric scaffold material and a coating disposed on the surface of said porous dielectric scaffold material, which coating comprises a semiconductor comprising a perovskite, wherein the perovskite comprises at least one halide anion.

Assignees

• Univ Oxford Innovation Ltd

Inventors

• Snaith Henry
• Lee Michael

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10F77/12

  Active materials · CPC title

• H10K30/151

  the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2 · CPC title

• H10K85/50 Primary

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H01G9/2004

  characterised by the electrolyte, e.g. comprising an organic electrolyte · CPC title